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    Untitled

    Abstract: No abstract text available
    Text: SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features • Max. RDS ON = 150m at VGS = 10V, ID = 2A  Low gate charge: Qg=18nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested


    Original
    PDF SNN0310Q OT-223 24-NOV-11 KSD-T5A012-000

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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    Original
    PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300