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    Untitled

    Abstract: No abstract text available
    Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)


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    PDF O-257 O-254 SNG30620 SNG30620A SNG20640 SNG20648A SNG40635 SNG40648A SNG40660A SNG40675

    SNG41270A

    Abstract: No abstract text available
    Text: A POW ERHOUSE IGBT IG B T : INS. G A T E B I P O L A R T R A N S I S T O R > o TO-254 CO 1-J TO-257 DEVICE TYPE C O LU O > m PACKAGE *C cont AMPS VCE (sat) VOLTS * f (1 ) Ci c- nsec’ Pf ~ c w SNG30620 600 20 2.6 570 75C 2.0 SNG30620A 600 20 3.1 310 750


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    PDF SNG30620 SNG30620A O-257 O-254 SNG20640 O-258 SNG20648A SNG21034 SNG40635 SNG40640 SNG41270A