Untitled
Abstract: No abstract text available
Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)
|
OCR Scan
|
PDF
|
O-257
O-254
SNG30620
SNG30620A
SNG20640
SNG20648A
SNG40635
SNG40648A
SNG40660A
SNG40675
|
IXGD30N60
Abstract: IXGD10N60
Text: PACKAGE TO-257 TO-254 TO-258 'c »I VOLTS AMPS VCE <sat VOLTS n sec PO WATTS CHIP 10 2.5 300 50 IXGD10N60 SNG30610A 600 600 10 3.0 300 50 IXGD10N60A SMG301010 1000 10 3.5 800 50 1XGD10N100 SNG301010A 1000 10 4.0 500 50 IXGD10N100A DEVICE TYPE b v ces •c
|
OCR Scan
|
PDF
|
O-257
SNG3Q610
SNG30610A
SMG301010
SNG301010A
IXGD10N60
IXGD10N60A
1XGD10N100
IXGD10N100A
O-254
IXGD30N60
|
SNG41270A
Abstract: No abstract text available
Text: A POW ERHOUSE IGBT IG B T : INS. G A T E B I P O L A R T R A N S I S T O R > o TO-254 CO 1-J TO-257 DEVICE TYPE C O LU O > m PACKAGE *C cont AMPS VCE (sat) VOLTS * f (1 ) Ci c- nsec’ Pf ~ c w SNG30620 600 20 2.6 570 75C 2.0 SNG30620A 600 20 3.1 310 750
|
OCR Scan
|
PDF
|
SNG30620
SNG30620A
O-257
O-254
SNG20640
O-258
SNG20648A
SNG21034
SNG40635
SNG40640
SNG41270A
|