SMT3725ALNF
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: SMT3725ALNF DESCRIPTION: SURFACE MOUNT TERMINATION, ALUMINUM NITRIDE, LEAD FREE ASSEMBLY DWG: 1102024 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3
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SMT3725ALNF
MIL-PRF-55342
824W154.
755W002.
09-E0830
SMT3725ALNF
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ATC600F100JT250XT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
ATC600F100JT250XT
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*J532
Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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Original
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PDF
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
*J532
C5750X7R1H106KT
j692
C5750KF1H226ZT
SEMICONDUCTOR J598
ATC600F100JT250XT
MRF8P20100H
SMT3725ALNF
ATC600F1R2
J529
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MRF8P20100HR3
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from
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Original
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PDF
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MRF8P20100H
MRF8P20100HR3
MRF8P20100HSR3
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