Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT PRELIMINARY Lead Pb Free Product – RoHS Compliant PD006-SMT SMD Type PHOTO-TRANSISTOR PD006-SMT is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted
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PD006-SMT
PD006-SMT
44mmx0
1000Lx
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CQ 4.000 crystal oscillator 4Mhz
Abstract: ztb 421 CQ 13.560 ctx128 ats 4.096 18pf CTX128 diode SE271 ZTB455E CSX750PCC 7213 time base generator ic
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 16-201 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 202-402 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 403-423
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ctx128
Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333
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CROSS AVX
Abstract: No abstract text available
Text: TECHNICAL INFORMATION SMT PROCESS CHARACTERISTICS OF AVX TRANSGUARDS by Ron Demko AVX Corporation Raleigh, NC Abstract: TransGuards are uniquely suited for wide-scale usage in SMT applications. TransGuards exhibit many advantages when used in SMT assemblies.
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protecti480-539-1501
S-SMT00M301-R
CROSS AVX
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inspection criteria
Abstract: 202F
Text: TECHNICAL INFORMATION SMT PROCESS CHARACTERISTICS OF AVX TRANSGUARDS by Ron Demko AVX Corporation Raleigh, NC Abstract: TransGuards are uniquely suited for wide-scale usage in SMT applications. TransGuards exhibit many advantages when used in SMT assemblies.
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S-SMT00M301-R
inspection criteria
202F
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transistor d-331
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
transistor d-331
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phototransistor 650 nm
Abstract: phototransistor peak 550 nm
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
2006-0y
phototransistor 650 nm
phototransistor peak 550 nm
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phototransistor 650 nm
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
phototransistor 650 nm
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Untitled
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two MMBT9015 chips in an SMT package.
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MMBT9015
OT-26
QW-R215-003
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transistor h 331
Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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331-JK
Q62702-P1634
GPLY6924
transistor h 331
c 331 transistor
331 transistor
switching transistor 331
phototransistor 650 nm
transistor 331
d 331 Transistor
Q62702-P1634
phototransistor 550 nm
phototransistor peak 550 nm
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transistor d 331
Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten
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331-JK
Q62702-P1634
transistor d 331
D F 331 TRANSISTOR
d 331 TRANSISTOR equivalent
switching transistor 331
Q62702-P1634
phototransistor 650 nm
phototransistor peak 550 nm
transistor d 331 data
c 331 transistor
transistor C 331
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phototransistor 650 nm
Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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Q62702-P1634
OHF01924
GPL06924
phototransistor 650 nm
Q62702-P1634
fototransistor led
c 331 transistor
transistor d 331
331 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two chips in a SMT package EQUIVALENT CIRCUITS
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OT-26
QW-R215-003
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two Chips in a SMT Package EQUIVALENT CIRCUITS
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OT-26
QW-R215-003
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IC TA 7089 equivalent
Abstract: TILT SWITCH RP-SUB-45-000-NR "photo transistor" photo transistor tilts SMT IR LED tilt ic 4510 SMT SUB MIN PC UL94-V0
Text: Optical Tilt Switch SMT Tilt Angle: 15˚, 30˚ & 45˚ for SMT Vertical Mount PCB Materials & Specifications 1. Housing: Glass-filled Polyamide, UL94-V0 2. Photo Trans: Silicon Photo Transistor 3. Base: Glass-filled Polyamide, UL94-V0 4. Tilt Angle Housing: Copper alloy, Nickel plated
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UL94-V0
RP-SUB-45-000-NR=
IC TA 7089 equivalent
TILT SWITCH
RP-SUB-45-000-NR
"photo transistor"
photo transistor tilts
SMT IR LED
tilt
ic 4510
SMT SUB MIN
PC UL94-V0
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univision technology
Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION JUNE 1999 Ball Grid Array SMT mmWave Products INSIDE. *12 NEW PRODUCTS RELEASED! Designers of millimeter and microwave radios now have access to advanced MMICs in a rugged SMT packaged format. Hittite Microwave has
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HMC258CB1
HMC264CB1
HMC265CB1
univision technology
Ka-Band MMIC Mixer
MICROWAVE ASSOCIATES RF SPDT switch
Microwave power GaAs FET data
HMC220MS8
ka-band mixer
HMC143
HMC259
HMC264CB1
HMC267QS16G
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fototransistor
Abstract: en 60721-3-3 9201 SFH 9201
Text: Reflexlichtschranke im SMT-Gehäuse Reflective Interrupter in SMT Package SFH 9201 Wesentliche Merkmale • Optimaler Arbeitsabstand 1 mm bis 5 mm • IR-GaAs-Lumineszenzdiode: Sender • Si-NPN-Fototransistor: Empfänger • Tageslichtsperrfilter • Hoher Kollektor-Emitter-Strom typ. 0.7 mA
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NPN CBO 40V CEO 25V EBO 5V
Abstract: MMST8598
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.
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OT-23)
200mA
SC-59/Japanese
SST1130
MMST1130
SST5088
MMST5088
100nA
50MHz
NPN CBO 40V CEO 25V EBO 5V
MMST8598
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sot23 marking code 8pf
Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V
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OT-23)
SC-59/Japanese
SST1130
MMST1130
200mA
SST5088
MMST5088
100nA
SST5089
sot23 marking code 8pf
marking r2k
R2Z SOT23
SSTA29
G1F G1K G3F
MARKING CODE B25 SOT23-5
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Tr 2SA1576
Abstract: 2SC4649 2sb1051
Text: Tr T ransistürs • EM3, UMT, SMT SOT-23, SC-59 Type Type UM T — — 2SA1037KLN — — 2SA1455K — — 2SC2412KLN — — 2SC3722K 2SA1774 — 2SC4617 Vi I :)(V) •V,.^ Function EM3 SMT Low Noise lr (mA) Pc(mW)(Ta = 25"C) UMT, SMT EM3 hff V ce(V) Ir(mA)
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OT-23,
SC-59)
2SC4619
2SC4725
2SC4726
Tr 2SA1576
2SC4649
2sb1051
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marking r2k
Abstract: marking r1c GAJ SOT23 R1P SOT-223
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.
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OT-23)
SSTH30
MMST1130
SC-59/Japanese
BCX70K
BCX71G
BCX71H
BCX71J
BFS17
marking r2k
marking r1c
GAJ SOT23
R1P SOT-223
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rohm diode dpak soldering
Abstract: PCIM 186 Motorola smps HALF BRIDGE tAN philips smd electrolytic 5Bp smd transistor data Toko 10mm Film dielectric trimmers Philips philips mepcopal mepcopal capacitor so16 thinfilm resistor
Text: AN OVERVIEW OF SURFACE MOUNT TECHNOLOGY SMT FOR POWER SUPPLY APPLICATIONS Written by: Sam Davis, PCIM Dave Hollander, Motorola Semiconductor Reprinted from HFPC, May, 1993 Proceedings Reprinted with permission from Intertec International, Inc. An Overview of Surface Mount Technology (SMT)
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AR523/D
rohm diode dpak soldering
PCIM 186
Motorola smps HALF BRIDGE
tAN philips smd electrolytic
5Bp smd transistor data
Toko 10mm
Film dielectric trimmers Philips
philips mepcopal
mepcopal capacitor
so16 thinfilm resistor
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UMT3N
Abstract: T108 T109 T110
Text: UMT3N/IMT3A h ÿ > v 7s £ /Transistors UMT3N IMT3A 7 4 V U -— T “ y K -X — K x / W X Isolated Mini-Mold Device -JK 'J'ft^Jlfifll/G eneral Small Signal Amp. • W fiv fîi ¡2/Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t i L'«o 2) UMT, SMT CDÉ
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SC-70)
SC-59)
15OLLECTOR
UMT3N
T108
T109
T110
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