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    04l20

    Abstract: No abstract text available
    Text: SMN04L20IS Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		PDF SMN04L20IS SMN04L20 04L20 01-OCT-13 KSD-T6Q017-001 04l20

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    Abstract: No abstract text available
    Text: SM MN04L L20IS S Logic Le evel N-Ch Po ower MOSFE ET 200V LOGIC N-Chan nnel MOSFET Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=200 0V Min. • Low gate charge: c Qg=4nC (Typ.) • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.) • 100% avala


    Original     		PDF MN04L L20IS SMN04L SMN04L2 04L20 06-JAN-12 KSD-T6Q017-000