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    Text: SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.)  Low gate charge: Qg=35nC (Typ.)  Low reverse transfer capacitance: Crss=18pF (Typ.)  RoHS compliant device  100% avalanche tested


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    PDF SMK1060FG SMK1060G O-220FT-3L SDB20D45 23-JUN-14 KSD-T0O154-000