TEMEX SMD QEN79
Abstract: No abstract text available
Text: FREQUENCY XOHybSMD QEN79 Defense ground – Crystal oscillator – XO Hyb SMD General Specification rev- Description Recommended Applications Benefits View drawing and pin out F re qu en c y XOHybSMD QEN79 Defense ground – Crystal oscillator – XO Hyb SMD
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QEN79
80MHz
/-100pm
TEMEX SMD QEN79
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300V-20A
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode m tm DF20LC30 OUTLINE U nit-m m Package : STO-220 W eight 1.5g Typ 10.2 P y h fL ig -(ffl) 300V 20A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use • Switching Regulator >DC/DC n y t K —S
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DF20LC30
STO-220
300V-20A
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode DE3L40 Unit-mm Package : E-pack Weight 0.326g Typ 400V 3A Feature • SMD • SMD • ß y -rx • trr=5Qns • trr=50ns • Low Noise Main Use • Switching Regulator >DC/DC n y tK — S • DC/DC Converter
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DE3L40
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Untitled
Abstract: No abstract text available
Text: M û / -fc ^ 5 -y COMPOSITE/CERAMIC PRODUCTS y 7 ° E M I f ô Â 7 < ^ ^ . Multilayer EMI Suppression Filters SMD 428 ^ m t£ A U * 2 -M F C Capacitive Varistors 434 .
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X4 DIODE SMD
Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use
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STO-220
DF20SC4M
X4 DIODE SMD
smd diode marking LM
smd diode marking B3
smd zm diode
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kl3r20
Abstract: No abstract text available
Text: SMD CSSPD KL SERIES K L i/'J -X • OUTLINE DIMENSIONS KL3R20, 25 f - O l «o_ l_js 3 Mr m% . 2.0 ir , , y ? * ; * * ; v n .fr- 1 B . — n- 1.2 101 : mm ■ RATINGS Absolute Maximum Ratings -^ T y p e No, item Symbol Storage Temperature Tstg -40-125 *c
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KL3R20,
KL3R20
KL3R25
kl3r20
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MARKING CODE smd R05
Abstract: No abstract text available
Text: A E 14 0Y 1 00034 Ver.1.01 SPECIFICATION SMD INDUCTORS COMPACT TYPE BRFL2518TYPE TAIYO YUDEN AE140 Y 100034V101 Specifications BRFL2518 TYPE (1/11) 1. Range of application This specification sheet applies to SMD inductor(compact type), BRFL2518. 2. Ordering code
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BRFL2518TYPE
AE140
100034V101
BRFL2518
BRFL2518.
16034EA
4291Aal
MARKING CODE smd R05
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smd diode 9j
Abstract: 5A SMD
Text: s/3'.vh+ - a"uy y- Schottky Barrier Diode Single Diode Surface Mount DE5S4M 40V 5A >SMD >Tjl50°C >P rr s m y j ^ V 'J I f f i l l nm-xmzamm ► S R B /J i \ n c / n c z \y K —$ m n .'f- h .o k m R A TIN G S Absolute Maximum Ratings is Ê » & ^ i|rê a
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Tjl50
J515-5
smd diode 9j
5A SMD
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DIODE smd marking uh
Abstract: cd4020
Text: Super Fast Recovery Diode Twin Diode mtm OUTLINE Package : STO-220 DF10LC20U Unit-mm Weight 1.5g Typ 10.2 O'/KB !J(M ) 200V 10A Feature • SMD Type No. • SMD • Low Noise •e y -rx • trr= 3 5 n s Polarity • trr=35ns 4.7 Main Use >DC/DC nytK—S
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STO-220
DF10LC20U
DIODE smd marking uh
cd4020
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Untitled
Abstract: No abstract text available
Text: S/as/h=*P- AUT' Schottky Barrier Diode OUTLINE DIMENSIONS DF15JC10 Unit • mm Package I STO -220 -I n 9 ±0.5 100 V 15A >SMD MS Ir = 0.6 mA nm -xm zam m ► y - h P C , LCDt - Z - m T Z ' y - ? 2 @ <D >DC/DC D y n - S ’ lifèÉIlfi:«* rstm < t i $ V>)
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DF15JC10
50HzIEB®
J515-5
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smd diode sf
Abstract: 10VII
Text: S/as/h=*P- AUT' Schottky Barrier Diode OUTLINE DIMENSIONS DF30JC4 Unit • mm P a c k a g e I S T O -2 2 0 10 9 ± -9- 40V 30A >SMD MS Ir = 0.7 mA nm-xmzamm ► y - h P C , LCDt - Z - m T Z ' y - ? ® 2 @ (D >DC/DC D y n - S ’ l i & É I J f H i f c r s t f l < f £ $ v>)
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DF30JC4
DF30JC4
50HzIB
J515-5
smd diode sf
10VII
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smd diode marking YK
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use
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D1FM3
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode mtmm D1FM3 o u tlin e 30V 5A Feature 1Small SMD 1Tj=150°C ' Low Vf=0.46V 1Low lR=0.1mA » /jv g y s M D >Tj=150°C • V f=0.46V •filR=0.1mA Main Use • K y j J — jS JÜKilt • DC/DC •m m m îïJ K y z iy • Reverse connect protection for
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2050I
Abstract: 1fp3
Text: Single Diode M1FP3 Schottky Barrier Diode mtmm o u t l i n e ft y - K v - ? 30V 1.29A Cathode m ark _ [P 6 N Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b ÎS V f=0.4V IV I x D .y h ïa ^ - (« T ype No. Dale code Main Use • DCth^ORffl
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It50Hz
2050I
1fp3
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm DF15SC4M O UTLINE U n it-m m Package : STO-220 W e ig h t 1 .5 g T y p P y K L l°-(ffl) 10.2 40V 1 5A m Feature a • SMD < SM D • T j= 1 5 0 °C 1Tj= 150°C • P rrsm 1 P r r s m R ating 1 High lo R ating -S m a ll-P K G
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DF15SC4M
STO-220
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LW806-011
Abstract: No abstract text available
Text: « ¡s u s LW806-011 T SMD Top View Package f t « ü iB C Ü fe a tu re s f i « £ High Brightness B ' l ' S i í S / N V í r - ' y Small SMD Package ^ B APPLIC A T IO N S "ü5F"H" ft«ís Indicators Amusement □ mw nm Illuminations Lighting PRODUCT SUMMARY
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LW806-011
LW806-011
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LY815-001
Abstract: ssie
Text: m wm a LY815-001 t î y t r —V SMD Top View Package ft f ö M B FEATURES U H H igh B rig h tn e s s tm m n w t y 'r - v S m a ll S M D P a c k a g e m & B A P P L IC A T IO N S In d ic a to rs » I ! * 1 ! T h in T y p e 1 Am usem ent mm I llu m in a tio n s
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LY815-001
LY815-001
ssie
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF20L60 P ack a g e U n it'm m : S T O -2 2 0 W eight 1 5 g T y p 10.2 600V 20A D a le c o d v * ^ (£> Control No Feature • SMD • SWEE • SMD • trr-70ns • trr-70ns ^ 0173 201.6 0 1• ,-«1
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DF20L60
trr-70ns
li501
J532-1)
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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D1FL40
D1FL40
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D1FS4A
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode mtm D1FS4A OUTLINE 40V 1.5A Feature • /JvSUSMD • Tj=150°C • f î V f = 0.45 V • P r r s m 7 7A ' 5 > ^ i SSE ' Small SMD 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating Main Use • 7 ,-f 'DC/DCZI y j K — 3> >mm. ^
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JISC0051
Abstract: tlf25 ru 100024 irf 418
Text: * 1 -25"C~+85"C 2 .« # ia * » 6 H SMD< > 9 0 9 04/05/06? < y SM DO ? 08?^/ 3 t> t-K CM04RC K JlBU05MC —25— 1-105‘C n > > h7>^ BU05MC S B * * ! H C <t 4 j a * ± » í - t ü „ —40‘C ~ + 8 5 ’C □ í > í — K 513 — •? u -< Jl- • A Jl- >
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CM04RC
BU05MC
BU05MC
JISC0051
tlf25
ru 100024
irf 418
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phototransistor smd
Abstract: No abstract text available
Text: SMD In fra re d E m ittin g D iodes . Electrical/O ptical Data Shape P art No. Material Emitted C olor Lens Y! Peak Wave Length (nm) I a lf=20mA Po=(mW/sr) lf=20mA *50mA Typ. Max. Min. Typ. “A ngle 9 I Figure 201/2 2.0x1.25x1.1mm (0805) ✓ ZTNI54W
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ZTNI54W
ZTHI54W
ZTNI76W
ZTHI76W
phototransistor smd
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diode 429 IK
Abstract: No abstract text available
Text: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 20A >SMD m s 'i'x > trr35n s >SRSÜ > D C /D C ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA
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DF20LC20U
STO-220
trr35n
DF20LC20U
50HziE5K
J515-5
diode 429 IK
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10SC4M
Abstract: f10sc4
Text: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti
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DF10SC4M
10SC4M
Tjl50
T-74S
J515-5
10SC4M
f10sc4
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