Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTORS LIST Search Results

    SMD TRANSISTORS LIST Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTORS LIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752

    marking code B2 SMD ic

    Abstract: RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D
    Text: HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 Previous ADE-208-1449(Z Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent


    Original     		PDF HTT1213E REJ03G0526-0100 ADE-208-1449 2SC5700 PXSF0006LA-A Colle-900 Unit2607 marking code B2 SMD ic RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D

    Untitled

    Abstract: No abstract text available
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


    Original     		PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A

    702 TRANSISTOR smd

    Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


    Original     		PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 TRANSISTOR smd transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC

    Untitled

    Abstract: No abstract text available
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA

    transistor smd marking KA

    Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up


    Original     		PDF BSS84Z OT-23-3 BSS84ZL-AE2-R BSS84ZG-AE2-R OT-23-3 QW-R502-719

    GAMMA Radiation Detector

    Abstract: metal detectors IC NPN PNP Transistor Arrays 5GHz PNP transistor pnp array TRANSISTOR PNP 5GHz DIELECTRICALLY ISOLATED BIPOLAR INTERSIL ISL73096RHVX pnp 8 transistor array PNP UHF transistor
    Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet December 20, 2007 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH ISL73127RH ISL73128RH ISL73096RH ISL73127RH FN6475 GAMMA Radiation Detector metal detectors IC NPN PNP Transistor Arrays 5GHz PNP transistor pnp array TRANSISTOR PNP 5GHz DIELECTRICALLY ISOLATED BIPOLAR INTERSIL ISL73096RHVX pnp 8 transistor array PNP UHF transistor

    smd transistor 304

    Abstract: ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A ISL73096RH smd transistor pinout pnp 8 transistor array
    Text: ISL73096RH Data Sheet March 29, 2007 Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer,


    Original     		PDF ISL73096RH ISL73096RH FN6475 smd transistor 304 ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A smd transistor pinout pnp 8 transistor array

    CDFP4-F16

    Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
    Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH FN6475 ISL73127RH ISL73128RH ISL73096RH ISL73127RH CDFP4-F16 ISL73096RHVF "top mark" intersil 5962F0721801V9A NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor

    5962F9764101VEA

    Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
    Text: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides


    Original     		PDF HS-6254RH HS-6254RH 5962F9764101VEA 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS9-6254

    2L smd transistor

    Abstract: SMD TRANSISTOR MARKING 037 smd transistor 079 TRANSISTOR SMD catalog catalog transistors smd transistors list SMD TRANSISTOR MARKING 079 SMD TRANSISTOR br-37 bipolar transistors catalog smd transistor 2l
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT5401 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT5401 OT-23 600mA 300mW 100MHz 2L smd transistor SMD TRANSISTOR MARKING 037 smd transistor 079 TRANSISTOR SMD catalog catalog transistors smd transistors list SMD TRANSISTOR MARKING 079 SMD TRANSISTOR br-37 bipolar transistors catalog smd transistor 2l

    ECU-V1H102KBM

    Abstract: smd 0.1uf SMP3316-331M 1271a 100-K12*10 208pin northbridge
    Text: www.fairchildsemi.com FAN6555 2A DDR Bus Termination Regulator Description • • • • • • • • • • • The FAN6555 switching regulator is designed to convert voltage supplies ranging from 2.3V to 4V into a desired output voltage or termination voltage for DDR SDRAM memory. The FAN6555 can be implemented to produce regulated


    Original     		PDF FAN6555 FAN6555 DS30006554 ECU-V1H102KBM smd 0.1uf SMP3316-331M 1271a 100-K12*10 208pin northbridge

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com Features Description • • • • • • • • • • • • The FAN6550 switching regulator is designed to convert voltage supplies ranging from 2.3V to 4V into a desired output voltage or termination voltage for DDR SDRAM memory. The FAN6550 can be implemented to produce regulated


    Original     		PDF FAN6550 DS30006550

    ITT 129

    Abstract: diagrams hitachi ecu datasheet mitsubishi ecu datasheet FAN6555M 337 SMD ECU-V1H102KBM FAN6555 ML6554CU P0751 SMD resistors 1210
    Text: www.fairchildsemi.com FAN6555 2A DDR Bus Termination Regulator Features Description • • • • • • • • • • • The FAN6555 switching regulator is designed to convert voltage supplies ranging from 2.3V to 4V into a desired output voltage or termination voltage for DDR SDRAM memory. The FAN6555 can be implemented to produce regulated


    Original     		PDF FAN6555 FAN6555 DS30006554 ITT 129 diagrams hitachi ecu datasheet mitsubishi ecu datasheet FAN6555M 337 SMD ECU-V1H102KBM ML6554CU P0751 SMD resistors 1210

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLOU187 – October 2006 TPA2006D1 Audio Power Amplifier EVM This document provides an overview of the Texas Instruments TI TPA2006D1 audio amplifier evaluation module. It includes a list of EVM features, a brief illustrated description of the module, and a list of EVM specifications.


    Original     		PDF SLOU187 TPA2006D1

    100-K12*10

    Abstract: No abstract text available
    Text: www.fairchildsemi.com FAN6555 2A DDR Bus Termination Regulator Description • • • • • • • • • • The FAN6555 switching regulator is designed to convert voltage supplies ranging from 2.3V to 4V into a desired output voltage or termination voltage for DDR SDRAM memory. The FAN6555 can be implemented to produce regulated


    Original     		PDF FAN6555 FAN6555 DS30006554 100-K12*10

    MMBT4401

    Abstract: ul smd sot-23
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT4401 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT4401 OT-23 350mW 250MHz MMBT4401 ul smd sot-23

    1P NPN

    Abstract: MMBT2222A
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT2222A product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT2222A OT-23 350mW 300MHz 1P NPN MMBT2222A

    SMD m3a

    Abstract: marking 2T MMBT4403
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT4403 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT4403 OT-23 350mW 200MHz 15mAdc) SMD m3a marking 2T MMBT4403

    82C250T

    Abstract: BS170 SMD BC547b smd 59012 h 331 pc74hct4066
    Text: Application Note CAN Physical Layer Concepts for the P8xC592 Microcontroller Harald Eiselc Product Conccpt & Application Laboratory Hamburg, F. R. Germany Keywords Controller Area Network, physical layer. ISO drafts, rwo-wire bus line, differential transceiver. P8xC592 microcon­


    OCR Scan     		PDF P8xC592 HKI/AN91027 PCA82C250T P8xCE598 P8xC592 PCA82C250T 100nF 82C250T BS170 SMD BC547b smd 59012 h 331 pc74hct4066