Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTOR Y14 Search Results

    SMD TRANSISTOR Y14 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR Y14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CDFP4-F16

    Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
    Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH FN6475 ISL73127RH ISL73128RH ISL73096RH ISL73127RH CDFP4-F16 ISL73096RHVF "top mark" intersil 5962F0721801V9A NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor

    TRANSISTOR SMD MARKING CODE A45

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G


    Original     		PDF LMSB709LT1G LMSB709LT3G 3000/Tape 10000/Tape OT-23 TRANSISTOR SMD MARKING CODE A45

    TRANSISTOR SMD MARKING CODE 210

    Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking


    Original     		PDF LMSB709LT1 3000/Tape LMSB709LT1G OT-23 LMSB709LT1-1/2 LMSB709LT1-2/2 TRANSISTOR SMD MARKING CODE 210 SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT: fT=400MHz. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF OT-23 400MHz. -150mA -500mA -50mA 150mA

    7805 smd

    Abstract: SMD DIODE gp 317 5Bp smd transistor 431 smd REGULATOR IC 7805 SMD 5Bp smd transistor data motorola j127 725 REGULATOR motorola 7805 motorola smd-transistor 5bp
    Text: MOTOROLA Order this document by TP3005/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3005 The TP3005 is designed for 960 MHz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


    Original     		PDF TP3005/D TP3005 TP3005 TP3005/D* 7805 smd SMD DIODE gp 317 5Bp smd transistor 431 smd REGULATOR IC 7805 SMD 5Bp smd transistor data motorola j127 725 REGULATOR motorola 7805 motorola smd-transistor 5bp

    5BP smd transistor data

    Abstract: 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent
    Text: MOTOROLA Order this document by TP3061/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3061 The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold


    Original     		PDF TP3061/D TP3061 TP3061 TP3060 TP3061/D* 5BP smd transistor data 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK
    Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and


    Original     		PDF TP3006/D TP3006 TP3006 TP3006/D* CW 7805 CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK

    IC LM317 8pin

    Abstract: LM317 SMD LM317LZ LM317 SMD 8pin LM317 INTERNAL STRUCTURE 4 to 20ma current source lm317 lm317 soic LM317LMX LM317 to92 lm317 8pin smd
    Text: LM317L-N www.ti.com SNVS775I – MAY 2004 – REVISED SEPTEMBER 2010 LM317L 3-Terminal Adjustable Regulator Check for Samples: LM317L-N FEATURES 1 • • • • • • 2 Adjustable output down to 1.2V Guaranteed 100mA output current Line regulation typically 0.01%V


    Original     		PDF LM317L-N SNVS775I LM317L 100mA AN-1112 IC LM317 8pin LM317 SMD LM317LZ LM317 SMD 8pin LM317 INTERNAL STRUCTURE 4 to 20ma current source lm317 lm317 soic LM317LMX LM317 to92 lm317 8pin smd

    lm393n

    Abstract: lm2903n 2903N LM2903M LM293N 2903M LM2903ITL smd LM393 LM393T LM293H
    Text: LM193-N, LM2903-N, LM293-N, LM393-N www.ti.com SNOSBJ6D – MAY 2004 – REVISED MAY 2004 LM193/LM293/LM393/LM2903 Low Power Low Offset Voltage Dual Comparators Check for Samples: LM193-N, LM2903-N, LM293-N, LM393-N FEATURES 1 • 2 • • • • • •


    Original     		PDF LM193-N, LM2903-N, LM293-N, LM393-N LM193/LM293/LM393/LM2903 lm393n lm2903n 2903N LM2903M LM293N 2903M LM2903ITL smd LM393 LM393T LM293H

    5962F0721805VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC

    SMD Transistor Y14

    Abstract: K18 capacitor SMD y14 5962F9751201VXC HS-22620RH HS9-22620RH-Q uncompensated operational amplifier HS2262 K18B smd transistor 813
    Text: HS-22620RH S E M I C O N D U C T O R July 1997 Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Features Description • Electrically Screened to DSCC SMD # 5962-97512 The HS-22620RH is a radiation hardened, dual bipolar operational amplifier that features very high input impedance


    Original     		PDF HS-22620RH HS-22620RH 80kV/V 038mm) SMD Transistor Y14 K18 capacitor SMD y14 5962F9751201VXC HS9-22620RH-Q uncompensated operational amplifier HS2262 K18B smd transistor 813

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


    Original     		PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    Untitled

    Abstract: No abstract text available
    Text: Radiation Hardened 8-Channel Source Driver IS-2981RH, IS-2981EH Features The Star*Power Radiation Hardened IS-2981RH, IS-2981EH are monolithic devices designed for use in high-side switching applications that benefit from separate grounds for the logic and loads. The devices have a 5V to 80V operating supply


    Original     		PDF IS-2981RH, IS-2981EH IS-2981EH -200mA FN4869

    diode 1N4148 SMD PACKAGE DIMENSION

    Abstract: SMD Marking Code Microchip diode uf 6 pin SMD MARKING CODE FW
    Text: MCP16301/H High-Voltage Input Integrated Switch Step-Down Regulator Features: General Description: • Up to 96% Typical Efficiency • Input Voltage Range: - 4.0V to 30V MCP16301 - 4.7V to 36V (MCP16301H) • Output Voltage Range: 2.0V to 15V • 2% Output Voltage Accuracy


    Original     		PDF MCP16301/H MCP16301) MCP16301H) OT-23-6 MCP16301/H diode 1N4148 SMD PACKAGE DIMENSION SMD Marking Code Microchip diode uf 6 pin SMD MARKING CODE FW

    Untitled

    Abstract: No abstract text available
    Text: Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch HS-201HSRH, HS-201HSEH Features The HS-201HSRH, HS-201HSEH are monolithic CMOS analog switch featuring power-off high input impedance, very fast switching speeds and low ON-resistance. Fabrication on our


    Original     		PDF HS-201HSRH, HS-201HSEH HS-201HSEH 300krad FN4874

    HS-OP470ARH

    Abstract: No abstract text available
    Text: Radiation Hardened, Very Low Noise Quad Operational Amplifiers HS-OP470ARH, HS-OP470AEH Features The HS-OP470ARH, HS-OP470AEH are a radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent


    Original     		PDF HS-OP470ARH, HS-OP470AEH HS-OP470AEH MIL-PRF-38535 50-300rad 100krad 038mm) FN4471 HS-OP470ARH

    100 pf, ATC Chip Capacitor

    Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
    Text: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6


    Original     		PDF MRF6401PHT/D MRF6401 SOE200 MRF6401 MRF6401PHT/D* 100 pf, ATC Chip Capacitor motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer

    diode 1N4148 SMD PACKAGE DIMENSION

    Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


    Original     		PDF MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148

    motorola rf Power Transistor

    Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


    Original     		PDF MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 BD135 5Bp smd transistor data SMD DIODE gp 317

    Untitled

    Abstract: No abstract text available
    Text: LP3987 www.ti.com SNVS164F – MAY 2004 – REVISED MARCH 2007 LP3987 Micropower micro SMD 150 mA Ultra Low-Dropout CMOS Voltage Regulators with Sleep MODE Check for Samples: LP3987 FEATURES APPLICATIONS • • • • • • • • • 1 2 • • Miniature 5-I/O micro SMD package


    Original     		PDF LP3987 SNVS164F LP3987 150mA

    mcp16301

    Abstract: aa2c diode b140 smd code marking 56 sot23-6 diode 1N4148 SMD PACKAGE DIMENSION smd diode EG - 413 TRANSISTOR REPLACEMENT ECG SMD transistor MARKING CODE 312 sot 26 smd marking c04 marking code E3 SMD diode
    Text: MCP16301 High Voltage Input Integrated Switch Step-Down Regulator Features General Description • • • • • • • • • • • • • • • • • The MCP16301 is a highly integrated, high-efficiency, fixed frequency, step-down DC-DC converter in a


    Original     		PDF MCP16301 MCP16301 OT-23 DS25004A-page aa2c diode b140 smd code marking 56 sot23-6 diode 1N4148 SMD PACKAGE DIMENSION smd diode EG - 413 TRANSISTOR REPLACEMENT ECG SMD transistor MARKING CODE 312 sot 26 smd marking c04 marking code E3 SMD diode

    Untitled

    Abstract: No abstract text available
    Text: HS-22620RH Semiconductor Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Features Description • Electrically Screened to DSCC SMD # 5962-97512 The HS-22620RH is a radiation hardened, dual bipolar oper­ ational amplifier that features very high input impedance


    OCR Scan     		PDF HS-22620RH HS-22620RH 80kV/V

    Untitled

    Abstract: No abstract text available
    Text: HS-22620RH h a r r is S E M I C O N D U C T O R July 1997 « • ■ ■ « ff Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Features Description • Electrically Screened to DSCC SMD # 5962-97512 The HS-22620RH is a radiation hardened, dual bipolar oper­


    OCR Scan     		PDF HS-22620RH HS-22620RH

    smd transistor bcv62

    Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
    Text: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A


    OCR Scan     		PDF MRF6401PHT/D MRF6401 BCV62 1600-200otorola, smd transistor bcv62 SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B