MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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equivalent ZO 607
Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
equivalent ZO 607
2sc5872
2SC5849
HTT1132E
702 smd transistor
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT81
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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BLT81
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation
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BLT81
SC08b
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
BLT81
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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4894
Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
4894
SMD ic catalogue
BLT80
KM10
4312 020 36640
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2222 730
Abstract: BLT81
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT81
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
2222 730
BLT81
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CDFP4-F16
Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The
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ISL73096RH,
ISL73127RH,
ISL73128RH
FN6475
ISL73127RH
ISL73128RH
ISL73096RH
ISL73127RH
CDFP4-F16
ISL73096RHVF
"top mark" intersil
5962F0721801V9A
NPN PNP Transistor Arrays
PNP Transistor Arrays Intersil
s1 smd transistor
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BFS17
Abstract: BFS17R BFS17W BFS17 E1
Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
BFS17 E1
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BFS17
Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
D-74025
bfs17 Vishay
702 TRANSISTOR sot-23
85038
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"marking E1"
Abstract: BFS17 BFS17R BFS17W
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
"marking E1"
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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PMCXB900UE
DFN1010B-6
OT1216)
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702 TRANSISTOR smd SOT23
Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case
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BFS17
BFS17R
BFS17W
OT-23
OT-23
BFS17W
702 TRANSISTOR smd SOT23
70.2 marking smd npn Transistor
704 TRANSISTOR smd SOT23
smd transistor marking j5
transistor smd 661 752
SMD IC marking 632
smd marking 271 Sot
transistor SOT23 J5
smd transistor 718
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70.2 marking smd npn Transistor
Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case
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BFS17
BFS17R
BFS17W
OT-23
OT-23
BFS17W
70.2 marking smd npn Transistor
SMD IC marking 632
702 TRANSISTOR smd SOT23
smd transistor marking j5
70.2 TRANSISTOR smd
smd transistor 718
transistor marking 702 application
sot-23 MARKING 636
transistor smd 661 752
704 TRANSISTOR smd SOT23
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SDV1005E
Abstract: V5R5
Text: Multilayer Chip Varistor – SDV Series Operating Temp. : -55℃~+125℃ FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time <0.5ns Excellent solderability (Ni, Sn plating) ● ● ● APPLICATIONS Transient voltage protection for IC and transistor
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1005-1pF
1005-2pF
SDV1608
1608-1pF
1608-2pF
SDV1005E
V5R5
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1.B smd transistor
Abstract: No abstract text available
Text: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance
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BFR460L3
1.B smd transistor
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Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKS
OT363
SC-88)
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TRANSISTOR SMD MARKING CODE 1v
Abstract: No abstract text available
Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 1 • Low noise figure: 1.1 dB at 1.8 GHz 2 • SMD leadless package • Excellent ESD performance typical value > 1500V HBM
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BFR460L3
TRANSISTOR SMD MARKING CODE 1v
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Untitled
Abstract: No abstract text available
Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 • Low noise figure: 1.1 dB at 1.8 GHz 1 2 • SMD leadless package • Excellent ESD performance typical value 1500V HBM
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BFR460L3
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TSSOP-6
Abstract: marking 34 TSSOP6 NXP smd marking Yd
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMGD290UCEA
OT363
AEC-Q101
TSSOP-6
marking 34 TSSOP6 NXP
smd marking Yd
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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