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    SMD TRANSISTOR P3D Search Results

    SMD TRANSISTOR P3D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR P3D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor SMD p90

    Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd PDF

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd PDF

    PD20010

    Abstract: PD20010-E AN1294 J-STD-020B
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 AN1294 J-STD-020B PDF

    NV SMD TRANSISTOR

    Abstract: AN1294 UHF rfid reader ma706
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■


    Original     		PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz


    Original     		PD84006-E 2002/95/EC PowerSO-10RF PD84006-E PDF

    PD20010-E

    Abstract: PD20010
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original     		PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 PDF

    PD85015-E

    Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■


    Original     		PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF PDF

    PD85015s-e

    Abstract: PD85015 AN1294 PD85015-E
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015s-e PD85015 AN1294 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package


    Original     		PD85015-E 2002/95/EC PowerSO-10RF PD85015-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85015-E 2002/95/EC PowerSO-10RF PD85015-E PDF

    PD84010-E

    Abstract: AN1294 JESD97 J-STD-020B
    Text: PD84010-E PD84010S-E RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10W with 14.3dB gain @ 870MHz / 7.5V ■ Plastic package ■ ESD protection


    Original     		PD84010-E PD84010S-E 870MHz 2002/95/EC PowerSO-10RF PD84010-E AN1294 JESD97 J-STD-020B PDF

    Untitled

    Abstract: No abstract text available
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PDF

    AN1294

    Abstract: JESD97 J-STD-020B PD20015-E
    Text: PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PD20015-E PD20015S-E 2002/95/EC PowerSO-10RF PD20015-E AN1294 JESD97 J-STD-020B PDF

    PD20015-E

    Abstract: PD-20015
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original     		PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PD-20015 PDF

    NV SMD TRANSISTOR

    Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PD85035-E PD85035S-E 870MHz 2002/93/EC PowerSO-10RF PD85035-E NV SMD TRANSISTOR PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PD84010-E 2002/95/EC PowerSO-10RF PD84010-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85025-E 2002/95/EC PowerSO-10RF PD85025-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85025-E 2002/95/EC PowerSO-10RF PD85025-E PDF

    PD85035S-E

    Abstract: PD85035 transistor SMD 12W PD85035-E PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■


    Original     		PD85035-E PD85035S-E 2002/95/EC1 PowerSO-10RF PD85035-E PD85035S-E PD85035 transistor SMD 12W PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E PDF

    PD85025s-e

    Abstract: PD85025 AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■


    Original     		PD85025-E PD85025S-E 2002/95/EC PowerSO-10RF PD85025-E PD85025s-e PD85025 AN1294 JESD97 J-STD-020B PDF

    PD85025s-e

    Abstract: NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 15.7dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PD85025-E PD85025S-E 870MHz 2002/93/EC PowerSO-10RF PD85025-E PD85025s-e NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PDF

    AN1294

    Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E AN1294 J-STD-020B PD85035S-E PD85035STR-E PD85035TR-E PD85035 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection


    Original     		PD84010-E 2002/95/EC PowerSO-10RF PD84010-E PDF