"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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Q67042-S4057
Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking
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SPP100N03S2-03
SPB100N03S2-03
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4058
PN0303
P-TO263-3-2
Q67042-S4057
Q67042-S4058
INFINEON PART MARKING
marking code br 39 SMD
SPB100N03S2-03
SPP100N03S2-03
PN0303
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PDF
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"marking E1"
Abstract: BFS17R BFS17 d 1556 transistor
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1
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BFS17/BFS17R
BFS17
BFS17R
D-74025
16-Oct-97
"marking E1"
d 1556 transistor
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PDF
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04N03LA
Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level
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IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
P-TO252-3-11
P-TO252-3-23
04N03LA
04n03l
smd marking D50
P-TO251-3-1
P-TO252-3-11
smd diode marking c3
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PDF
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04N03LA
Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level
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IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
P-TO252-3-11
P-TO252-3-23
04N03LA
P-TO251-3-1
P-TO252-3-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level
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Original
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IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
P-TO252-3-11
P-TO252-3-23
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PDF
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BFS17
Abstract: transistor BFs 18 BFS17R marking E1
Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BFS17
BFS17R
D-74025
transistor BFs 18
marking E1
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PDF
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transistor smd marking code c3
Abstract: smd transistor marking z1 marking code C3 SMD Transistor smd code HF transistor transistor SMD MARKING CODE HF PF 08112 smd transistor marking l6 marking TRANSISTOR SMD nf c4 marking code e2 SMD Transistor smd transistor marking l7
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V
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M3D438
BLF1043
15-Aug-02)
transistor smd marking code c3
smd transistor marking z1
marking code C3 SMD Transistor
smd code HF transistor
transistor SMD MARKING CODE HF
PF 08112
smd transistor marking l6
marking TRANSISTOR SMD nf c4
marking code e2 SMD Transistor
smd transistor marking l7
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114TMB
DFN1006B-3
OT883B)
PDTC114TMB.
AEC-Q101
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PDF
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PDTA114TMB
Abstract: SMD TRANSISTOR MARKING 2X TRANSISTOR SMD 2X K
Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114TMB
DFN1006B-3
OT883B)
PDTC114TMB.
AEC-Q101
PDTA114TMB
SMD TRANSISTOR MARKING 2X
TRANSISTOR SMD 2X K
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PDF
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PDTA123YMB
Abstract: PDTC123YMB
Text: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA123YMB
DFN1006B-3
OT883B)
PDTC123YMB
AEC-Q101
PDTA123YMB
PDTC123YMB
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PDF
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PDTA144
Abstract: nxp MARKING CC PDTC144V
Text: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA144VMB
DFN1006B-3
OT883B)
PDTC144VMB.
AEC-Q101
PDTA144
nxp MARKING CC
PDTC144V
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PDF
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PDTC124
Abstract: PDTC124XMB
Text: 83B PDTC124XMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTC124XMB
DFN1006B-3
OT883B)
PDTA124XMB.
AEC-Q101
PDTC124
PDTC124XMB
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PDF
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PDTC144V
Abstract: No abstract text available
Text: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTA144VMB
DFN1006B-3
OT883B)
PDTC144VMB.
AEC-Q101
PDTC144V
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PDF
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PDTA123YMB
Abstract: PDTC123YMB
Text: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTA123YMB
DFN1006B-3
OT883B)
PDTC123YMB
AEC-Q101
PDTA123YMB
PDTC123YMB
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PDF
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BISS 0001
Abstract: No abstract text available
Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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Original
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PBSS2515MB
OT883B
PBSS3515MB.
AEC-Q101
BISS 0001
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PDF
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biss 0001
Abstract: No abstract text available
Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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Original
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PBSS2515MB
OT883B
PBSS3515MB.
AEC-Q101
biss 0001
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PDF
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A08K
Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4
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KO3416
OT-23-3
A08K
a08k transistor
SMD TRANSISTOR mosfet marking pd
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PDF
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transistor smd marking code c3
Abstract: smd transistor marking L5 smd transistor marking l6 smd code HF transistor SMD MARKING CODE C17 SMD MARKING CODE C16 SMD HF transistor smd rf transistor marking marking TRANSISTOR SMD nf c4 TRANSISTOR SMD MARKING CODE XI
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 10 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 FEATURES PINNING - SOT538A • Typical 2-tone performance at a supply voltage of 26 V
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Original
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M3D438
BLF2043
15-Aug-02)
transistor smd marking code c3
smd transistor marking L5
smd transistor marking l6
smd code HF transistor
SMD MARKING CODE C17
SMD MARKING CODE C16
SMD HF transistor
smd rf transistor marking
marking TRANSISTOR SMD nf c4
TRANSISTOR SMD MARKING CODE XI
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS V = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1
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KO3403
OT-23
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PDF
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HS9-26CT32EH
Abstract: 26CT32 HS9-26CT32RH-Q 5962F95631 rs-422 TTL HS-26CT32 k16a smd marking LD 26CT32RH
Text: Radiation Hardened Quad Differential Line Receivers HS-26CT32RH, HS-26CT32EH The Intersil HS-26CT32RH, HS-26CT32EH are differential line receivers designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422.
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HS-26CT32RH,
HS-26CT32EH
HS-26CT32EH
RS-422.
200mV
05A/cm2
HS9-26CT32EH
26CT32
HS9-26CT32RH-Q
5962F95631
rs-422 TTL
HS-26CT32
k16a
smd marking LD
26CT32RH
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PDF
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HS-26CT32RH
Abstract: smd transistor A1A 5962F9563101QXC
Text: Radiation Hardened Quad Differential Line Receivers HS-26CT32RH, HS-26CT32EH The Intersil HS-26CT32RH, HS-26CT32EH are differential line receivers designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422.
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Original
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HS-26CT32RH,
HS-26CT32EH
HS-26CT32EH
RS-422.
200mV
05A/cm2
HS-26CT32RH
smd transistor A1A
5962F9563101QXC
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PDF
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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PDF
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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OCR Scan
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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PDF
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