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    SMD TRANSISTOR LF Search Results

    SMD TRANSISTOR LF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR LF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC


    Original     		PDF PHPT61002NYC OT669 LFPAK56) PHPT61002PYC

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.


    Original     		PDF PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003NY OT669 LFPAK56) AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.


    Original     		PDF PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.


    Original     		PDF PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original     		PDF PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.


    Original     		PDF PHPT61002PYC OT669 LFPAK56) PHPT61002NYC.

    Untitled

    Abstract: No abstract text available
    Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum • Features 1. Developed as a chip type SMD photo-transistor for both right-angle and upright uses 2. Small and square size, dimensions : 3.2 L x 2.4(W)x2.4(H)mm 3. Automatic mounting by chip mounter avail­ able 4. Reflow soldering available


    OCR Scan     		PDF CPT-181 950nmlR3tCttSSSHSH CL-200IRt CL-200IR L-2001R

    DSAIH0002562

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 DSAIH0002562

    s7d smd

    Abstract: SMD s7d BKC Semiconductors DSAIH0002561
    Text: Switching Diode SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 s7d smd SMD s7d BKC Semiconductors DSAIH0002561

    smd transistor LR

    Abstract: smd transistor 3U DSAIH0002561
    Text: SMD SOT-23 Plastic Switching Diode Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 smd transistor LR smd transistor 3U DSAIH0002561

    11733

    Abstract: BKC Semiconductors DSAIH0002562 transistor 117-33
    Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 11733 BKC Semiconductors DSAIH0002562 transistor 117-33

    BKC Semiconductors

    Abstract: LR1 transistor smd transistor LR
    Text: SMD SOT-23 Plastic Use Advantages Dual Switching Diodes n a- Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 BKC Semiconductors LR1 transistor smd transistor LR

    transistor SMD Lf

    Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
    Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 transistor SMD Lf LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors

    PH smd transistor PH

    Abstract: diode for clippers BKC Semiconductors DSAIH0002541 LR1 transistor
    Text: SMD SOT-23 Plastic Use Advantages Switching Diode —0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 100pA PH smd transistor PH diode for clippers BKC Semiconductors DSAIH0002541 LR1 transistor

    DSAIH00025320

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 DSAIH00025320

    BKC Semiconductors

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 BKC Semiconductors

    BUZ100

    Abstract: BSS10
    Text: SIEMENS BUZ100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw'df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50V b 60 A Boston


    OCR Scan     		PDF O-220 BUZ100L C67078-S1354-A2 T05155 BUZ100 BSS10