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    SMD TRANSISTOR L33 Search Results

    SMD TRANSISTOR L33 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR L33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor l32

    Abstract: SMD EZ 648 001aan207 BLF0510H6600P
    Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF0510H6600P powe11 smd transistor l32 SMD EZ 648 001aan207 BLF0510H6600P

    SMD EZ 648

    Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
    Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF988; BLF988S BLF988 SMD EZ 648 smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12

    Untitled

    Abstract: No abstract text available
    Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF10H6600P; BLF10H6600PS BLF10H6600P

    Untitled

    Abstract: No abstract text available
    Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF988; BLF988S BLF988

    907 TRANSISTOR smd

    Abstract: No abstract text available
    Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 — 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF884P; BLF884PS BLF884P 907 TRANSISTOR smd

    DVB-S2 chipset

    Abstract: NTC16 L33 SMD smd transistor L33 smd transistor L34 SMD l34 Transistor optocoupler PC817 SMD l33 Transistor DVB-S2 hd 22 TDK VFD TRANSFORMER
    Text: AN2600 Application note SMPS for high-end PVR based on L6668 Introduction The set-top box STB market is growing very fast due to the high growth of both satellite and terrestrial/cable broadcasting. As expected, the market is always looking for solutions


    Original     		PDF AN2600 L6668 265Vac) L6668, DVB-S2 chipset NTC16 L33 SMD smd transistor L33 smd transistor L34 SMD l34 Transistor optocoupler PC817 SMD l33 Transistor DVB-S2 hd 22 TDK VFD TRANSFORMER

    Untitled

    Abstract: No abstract text available
    Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P; BLF879PS 200rs BLF879P

    smd transistor L33

    Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P 771-BLF879P112 BLF879P smd transistor L33 SMD l33 Transistor transistor smd l33 smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582

    UT-090C-25

    Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
    Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.


    Original     		PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P UT-090C-25 smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253

    Untitled

    Abstract: No abstract text available
    Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF884P; BLF884PS BLF884P

    SMD l33 Transistor

    Abstract: No abstract text available
    Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.


    Original     		PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P SMD l33 Transistor

    smd transistor L33

    Abstract: transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2
    Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 2 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P; BLF879PS BLF879P smd transistor L33 transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2

    smd transistor L33

    Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P smd transistor L33 dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor

    UT-090C-25

    Abstract: J346
    Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF884P; BLF884PS 86isclaimers BLF884P UT-090C-25 J346

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS narrow15 BLF888A

    BLF888B

    Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
    Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888B; BLF888BS BLF888B smd transistor L33 Technical Specifications of DVB-T2 Transmitter

    smd transistor L33

    Abstract: transistor smd l33 SMD l33 Transistor
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 transistor smd l33 SMD l33 Transistor

    BLF888A

    Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33

    Untitled

    Abstract: No abstract text available
    Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888B; BLF888BS

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A

    smd transistor l31

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor l31

    transistor L43 SMD

    Abstract: transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136
    Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 20 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.


    Original     		PDF BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF transistor L43 SMD transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136

    SMD Transistor t08

    Abstract: transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19
    Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 25 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.


    Original     		PDF BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF SMD Transistor t08 transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19

    W01 SMD mosfet

    Abstract: elna capacitor smd fet b02 LT1553 NSC03 a09 transistor smd 8201F A07 smd transistor LT1430 PO718
    Text: AMD-K6 ® Processor Power Supply Design Application Note Publication # 21103 Rev: F Issue Date: May 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the


    Original     		PDF LX1660/61 LX1662/63 LX1664/65 MAX1624 MAX1638 MAX1710 ML4900 ML4902 RC5036 RC5041/42 W01 SMD mosfet elna capacitor smd fet b02 LT1553 NSC03 a09 transistor smd 8201F A07 smd transistor LT1430 PO718