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    SMD TRANSISTOR L32 Search Results

    SMD TRANSISTOR L32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR L32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    smd transistor l32

    Abstract: SMD EZ 648 001aan207 BLF0510H6600P
    Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF0510H6600P powe11 smd transistor l32 SMD EZ 648 001aan207 BLF0510H6600P

    SMD EZ 648

    Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
    Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF988; BLF988S BLF988 SMD EZ 648 smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12

    Untitled

    Abstract: No abstract text available
    Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF10H6600P; BLF10H6600PS BLF10H6600P

    Untitled

    Abstract: No abstract text available
    Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF988; BLF988S BLF988

    907 TRANSISTOR smd

    Abstract: No abstract text available
    Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 — 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF884P; BLF884PS BLF884P 907 TRANSISTOR smd

    DVB-S2 chipset

    Abstract: NTC16 L33 SMD smd transistor L33 smd transistor L34 SMD l34 Transistor optocoupler PC817 SMD l33 Transistor DVB-S2 hd 22 TDK VFD TRANSFORMER
    Text: AN2600 Application note SMPS for high-end PVR based on L6668 Introduction The set-top box STB market is growing very fast due to the high growth of both satellite and terrestrial/cable broadcasting. As expected, the market is always looking for solutions


    Original     		PDF AN2600 L6668 265Vac) L6668, DVB-S2 chipset NTC16 L33 SMD smd transistor L33 smd transistor L34 SMD l34 Transistor optocoupler PC817 SMD l33 Transistor DVB-S2 hd 22 TDK VFD TRANSFORMER

    Untitled

    Abstract: No abstract text available
    Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P; BLF879PS 200rs BLF879P

    smd transistor L33

    Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P 771-BLF879P112 BLF879P smd transistor L33 SMD l33 Transistor transistor smd l33 smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582

    UT-090C-25

    Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
    Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.


    Original     		PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P UT-090C-25 smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253

    Untitled

    Abstract: No abstract text available
    Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF884P; BLF884PS BLF884P

    SMD l33 Transistor

    Abstract: No abstract text available
    Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.


    Original     		PDF BLU6H0410L-600P; BLU6H0410LS-600P BLU6H0410L-600P 6H0410LS-600P SMD l33 Transistor

    smd transistor L33

    Abstract: transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2
    Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 2 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P; BLF879PS BLF879P smd transistor L33 transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2

    smd transistor L33

    Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF879P smd transistor L33 dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor

    smd transistor L33

    Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 UT-090C-25 L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS narrow15 BLF888A

    BLF888B

    Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
    Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888B; BLF888BS BLF888B smd transistor L33 Technical Specifications of DVB-T2 Transmitter

    smd transistor L33

    Abstract: transistor smd l33 SMD l33 Transistor
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 transistor smd l33 SMD l33 Transistor

    BLF888A

    Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33

    Untitled

    Abstract: No abstract text available
    Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888B; BLF888BS

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A

    smd transistor l31

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor l31

    WG12864A

    Abstract: 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197
    Text: Optoelectronics New products SMD LEDs White 3528 Series High Power SMD LEDs White 3535 37E Series From £0.05 See page 604 Page 599 From £0.64 12V LED Strips, 4.8W per metre 12V LED Strips, 4.8W per metre Warm white See page 610 Cool white See page 610 From


    Original     		PDF L-934 1511A35W3 1511A35W3D 1511A35UY3 1511A35UG3 1000mcd 500mcd 200mcd 1500mcd 5mA/10mA WG12864A 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197

    smd transistor l32

    Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
    Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter


    OCR Scan     		PDF BLV945B OT324 OT324 7110fl2fc. OT324. ocn23ia smd transistor l32 SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27