Untitled
Abstract: No abstract text available
Text: Transistor IC SMD Type PNP medium power transistor KCP69 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current max. 1 A Low voltage (max. 20 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 Base 2 ,4 Collector
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KCP69
OT-223
BCP69-16
BCP69-25
BCP69
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Nordmende
Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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smd transistor 68 w
Abstract: No abstract text available
Text: Transistors IC SMD Type Complementary Enhancement Mode MOS Transistors KHC2300 Features High-speed switching No secondary breakdown. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage N-Channel P-Channel Unit VDSS 300
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KHC2300
-115m
170mA
-115mA
smd transistor 68 w
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ts 4141 TRANSISTOR smd
Abstract: smd transistor js SMD IC ts 4141 ts 4141 TRANSISTOR TRANSISTOR SMD CD JS-91 PZTA44
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage
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PZTA44
OT-223
C-120
PZTA44Rev140606E
ts 4141 TRANSISTOR smd
smd transistor js
SMD IC ts 4141
ts 4141 TRANSISTOR
TRANSISTOR SMD CD
JS-91
PZTA44
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ts 4141 TRANSISTOR smd
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage
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PZTA44
OT-223
C-120
PZTA44Rev140606E
ts 4141 TRANSISTOR smd
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khc21025
Abstract: SMD Transistors nc mos n-ch SMD Transistor nc
Text: Transistors IC SMD Type Complementary enhancement mode MOS transistors KHC21025 Features High-speed switching No secondary breakdown Very low on-resistance. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Drain to Source Voltage VDSS
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KHC21025
khc21025
SMD Transistors nc
mos n-ch
SMD Transistor nc
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smd transistor js
Abstract: smd transistor bcp56 transistor bcp56 bcp55 bcp54 smd transistor BCP54 bcp55 to BCP56 bcp55 sot BCP54-10
Text: Transistors SMD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High collector current +0.1 3.00-0.1 1.3 W power dissipation. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1
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BCP54;
BCP55;
BCP56
OT-223
BCP55
BCP54
smd transistor js
smd transistor bcp56
transistor bcp56
bcp55
bcp54 smd transistor
BCP54
bcp55 to
BCP56
bcp55 sot
BCP54-10
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transistor SMD P2F
Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
Text: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage
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PXT2907A
transistor SMD P2F
smd p2f transistor
smd p2f
transistor P2F
P2F SMD TRANSISTOR
MARKING P2F
smd transistor marking 26
smd transistor p2f
transistor marking p2f
ON MARKING P2F
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marking chc
Abstract: SOT89 marking cec BC868 BC868-16 BC869 BC869-16 BC869-25 MARKING SMD CEC
Text: Transistors SMD Type PNP Medium Power Transistor BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage
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BC869
BC868
BC868-16
BC869-25
BC869-16
marking chc
SOT89 marking cec
BC868
BC868-16
BC869
BC869-16
BC869-25
MARKING SMD CEC
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TRANSISTOR SMD 2X K
Abstract: smd transistor 2x TRANSISTOR SMD 2X SMD TRANSISTOR MARKING 2X smd transistor js PXT4401 smd marking 2x 2X Smd marking
Text: Transistors SMD Type NPN Switching Transistor PXT4401 Features High current max. 600 mA Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage
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PXT4401
TRANSISTOR SMD 2X K
smd transistor 2x
TRANSISTOR SMD 2X
SMD TRANSISTOR MARKING 2X
smd transistor js
PXT4401
smd marking 2x
2X Smd marking
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BCP69
Abstract: transistor bcp69 BCP69-16 BCP69-25 BCP69 ic
Text: Transistors SMD Type PNP Medium Power Transistor BCP69 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 High current. Three current gain selections. +0.1 3.00-0.1 1.4 W total power dissipation. +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3
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BCP69
OT-223
BCP69-16
BCP69-25
BCP69-16/IN
BCP69
transistor bcp69
BCP69-16
BCP69-25
BCP69 ic
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BCP68-25
Abstract: BCP68
Text: Transistors SMD Type NPN Medium Power Transistor BCP68 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High current. Three current gain selections. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 1.4 W total power dissipation.
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BCP68
OT-223
BCP68-25
BCP68/25
BCP68-25
BCP68
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BC868
Abstract: SMD MARKING 104 BC868-25 1V160
Text: Transistors SMD Type NPN Medium Power Transistor BC868 Features High current Two current gain selections 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage open emitter VCBO 32 V Collector-emitter voltage (open base)
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BC868
BC868-25
BC868
SMD MARKING 104
BC868-25
1V160
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PXT3904
Abstract: No abstract text available
Text: Transistors SMD Type NPN Switching Transistor PXT3904 Features High current max. 100 mA Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage
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PXT3904
PXT3904
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MARKING SMD PNP TRANSISTOR 2a
Abstract: smd transistor js MARKING22A PXT3906 SMD PNP TRANSISTOR "MARKING 2a"
Text: Transistors SMD Type PNP Switching Transistor PXT3906 Features High current max. 100 mA Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage
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PXT3906
resi-10
MARKING SMD PNP TRANSISTOR 2a
smd transistor js
MARKING22A
PXT3906
SMD PNP TRANSISTOR "MARKING 2a"
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2222A SMD
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Switching Transistor PZT2222A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current max. 600 mA Low voltage (max.40 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector
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PZT2222A
OT-223
2222A SMD
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smd transistor js
Abstract: SMD TRANSISTOR js t KZT2222A IC smd
Text: Transistors IC SMD Type NPN Switching Transistor KZT2222A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current max. 600 mA Low voltage (max.40 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector
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KZT2222A
OT-223
smd transistor js
SMD TRANSISTOR js t
KZT2222A
IC smd
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smd transistor marking 1p
Abstract: SMD transistor MARKING 113 smd transistor js PXT2222A 1P smd transistor 1p TRANSISTOR smd 1p smd transistor marking 1p f 15MA300
Text: Transistors SMD Type NPN Switching Transistor PXT2222A Features High current max. 600 mA Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage
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PXT2222A
smd transistor marking 1p
SMD transistor MARKING 113
smd transistor js
PXT2222A
1P smd transistor
1p TRANSISTOR
smd 1p
smd transistor marking 1p f
15MA300
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BSP16
Abstract: No abstract text available
Text: Transistors SMD Type PNP High-Voltage Transistor BSP16 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High voltage max. 350 V . +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1
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BSP16
OT-223
BSP16
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XS 630 B
Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.
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THN5602F
OT-89
THN5602F
OT-89
465MHz
100nF
XS 630 B
ic smd a 1712
NPN medium power transistor in a smd
CIRCUIT SCHEMATIC diagram
Transistor B 1566
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transistor smd zG
Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband
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OT143
BFG17A
MSB014
OT143.
711062fci
711062b
7110A2L
transistor smd zG
npn zg
SMD Transistor zG
TRANSISTOR 610 smd
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BSP171P
Abstract: BSP171
Text: BSP 171 P SIEMENS Preliminary data SIPMOS^ Power Transistor • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Type VGS 1 V “ > o RDS on 0.3 & CO b -1.8 A il BSP 171 P Vbs -60 V Pin 1 Pin2/4 Pin 3 G D S Package Ordering Code
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OCR Scan
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P-SOT223-4-1
Q67041-S4019
BSP171P
BSP171
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30N03
Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
Text: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated
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SPP30N03
P-T0220-3-1
Q67040-S4736-A2
SPB30N03
P-T0263-3-2
Q67040-S4736-A3
VPT05I64
fiS35bG5
D133777
SQT-89
30N03
marking code ff p SMD Transistor
smd transistor TN
6 pin TRANSISTOR SMD CODE XI
G1337
TRANSISTOR SMD MARKING CODE XI
SMD transistor 2x sot 23
smd code book B3
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smd transistor marking 7j
Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
Text: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current
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BUZ103S
BUZ103S
P-T0220-3-1
Q67040-S4009-A2
E3045A
P-T0263-3-2
Q67040-S4009-A6
E3045
smd transistor marking 7j
TRANSISTOR SMD MARKING CODE c015
TRANSISTOR SMD MARKING CODE BS s
diode marking code MU
marking 684 diode smD
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