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    SMD TRANSISTOR H BR Y1 Search Results

    SMD TRANSISTOR H BR Y1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR H BR Y1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7805 smd

    Abstract: SMD DIODE gp 317 5Bp smd transistor 431 smd REGULATOR IC 7805 SMD 5Bp smd transistor data motorola j127 725 REGULATOR motorola 7805 motorola smd-transistor 5bp
    Text: MOTOROLA Order this document by TP3005/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3005 The TP3005 is designed for 960 MHz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    PDF TP3005/D TP3005 TP3005 TP3005/D* 7805 smd SMD DIODE gp 317 5Bp smd transistor 431 smd REGULATOR IC 7805 SMD 5Bp smd transistor data motorola j127 725 REGULATOR motorola 7805 motorola smd-transistor 5bp

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK
    Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and


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    PDF TP3006/D TP3006 TP3006 TP3006/D* CW 7805 CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK

    5BP smd transistor data

    Abstract: 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent
    Text: MOTOROLA Order this document by TP3061/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3061 The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold


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    PDF TP3061/D TP3061 TP3061 TP3060 TP3061/D* 5BP smd transistor data 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent

    TRANSISTOR SMD MARKING CODE 210

    Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking


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    PDF LMSB709LT1 3000/Tape LMSB709LT1G OT-23 LMSB709LT1-1/2 LMSB709LT1-2/2 TRANSISTOR SMD MARKING CODE 210 SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h

    SMD Transistor Y12

    Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
    Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    5962F0721805VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of


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    PDF ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC

    HALL EFFECT 21E

    Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
    Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


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    PDF 26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG

    diode 1N4148 SMD PACKAGE DIMENSION

    Abstract: motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


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    PDF MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola 100 pf, ATC Chip Capacitor 100A 3 w RF POWER TRANSISTOR NPN BALLAST MOTOROLA bd135 n transistor 431 ab 1N4148

    motorola rf Power Transistor

    Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


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    PDF MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 BD135 5Bp smd transistor data SMD DIODE gp 317

    DIODE SMD 012 MOTOROLA

    Abstract: PL 431 transistor
    Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 13/11/99 The RF Line MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast


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    PDF MRF6402/D MRF6402 MRF6402 MRF6402/D DIODE SMD 012 MOTOROLA PL 431 transistor

    MRF6401 PHOTOMASTER

    Abstract: 305C BCV62 MRF6401 TL11 100 pf, ATC Chip Capacitor motorola base station 1995
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically


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    PDF MRF6401/D MRF6401 MRF6401 MRF6401PHTing MRF6401/D* MRF6401 PHOTOMASTER 305C BCV62 TL11 100 pf, ATC Chip Capacitor motorola base station 1995

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP5051/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP5051 The TP5051 is designed for 470 MHz cellular radio base stations in both analog and digital applications. It incorporates high value emitter ballast


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    PDF TP5051/D TP5051 TP5051 TP5051/D*

    305C

    Abstract: BCV62 MRF6401 TL11 motorola Base Station motorola rf Power Transistor smd potentiometer
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


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    PDF MRF6401/D MRF6401 MRF6401 SOE200 305C BCV62 TL11 motorola Base Station motorola rf Power Transistor smd potentiometer

    transistor 313 smd

    Abstract: smd transistor bcv62 MRF640
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


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    PDF MRF6401/D MRF6401 MRF6401 SOE200 transistor 313 smd smd transistor bcv62 MRF640

    motorola rf Power Transistor

    Abstract: 100 pf, ATC Chip Capacitor 305C BCV62 MRF6401 TL11 Motorola Potentiometer MRF64
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically


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    PDF MRF6401/D MRF6401 MRF6401 SOE200 motorola rf Power Transistor 100 pf, ATC Chip Capacitor 305C BCV62 TL11 Motorola Potentiometer MRF64

    LM324 SMD

    Abstract: LLC resonant full bridge schematic resonant full bridge schematic NCP4303 resonant half bridge schematic 1n5408 smd NCP1397 SMD resistor 01R NCP1605 SMD resistors 2r2
    Text: TND399/D Rev. 0, February-10 216 W All in One Power Supply Reference Design Featuring NCP1605, NCP1397 and NCP4303 Documentation 1 Intellectual Property is conveyed by the transfer of this documentation. This reference design documentation package is provided only to assist


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    PDF TND399/D February-10 NCP1605, NCP1397 NCP4303 IEC61000-3-2 NCP1605: NCP1397: NCP4303: TLV431: LM324 SMD LLC resonant full bridge schematic resonant full bridge schematic NCP4303 resonant half bridge schematic 1n5408 smd SMD resistor 01R NCP1605 SMD resistors 2r2

    TRANSISTOR SMD MARKING CODE A45

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G


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    PDF LMSB709LT1G LMSB709LT3G 3000/Tape 10000/Tape OT-23 TRANSISTOR SMD MARKING CODE A45

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    Untitled

    Abstract: No abstract text available
    Text: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


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    PDF HFA3127/883 MIL-STD883 HFA3127/883

    5Bp smd

    Abstract: smd transistor 8g 1N4148 ATC100A BD135 CS-12 MRF6406 CASE-319 bd135 equivalent Transistor t 2 smd motorola
    Text: Order this data sheet by MRF6406/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an


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    PDF MRF6406/D MRF6406 MRF6406 2PHX33607Q-0 MRF6406/D 5Bp smd smd transistor 8g 1N4148 ATC100A BD135 CS-12 CASE-319 bd135 equivalent Transistor t 2 smd motorola

    harris 8 lead cerdip DIMENSIONS

    Abstract: No abstract text available
    Text: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


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    PDF HFA3127/883 HFA3127/883 1-800-4-HARRIS harris 8 lead cerdip DIMENSIONS

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    smd transistor A11b

    Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
    Text: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.


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    MRF6401

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly


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    PDF MRF6401/D MRF6401 MRF6401PHT/D 2PHX33566Q-1 1359A