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    SMD TRANSISTOR GS F Search Results

    SMD TRANSISTOR GS F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR GS F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2


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    PDF OT-23

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


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    PDF BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE

    BSH103

    Abstract: power diode 12 ksr 04 smd transistor 24 sot23 N-channel mos sot23 transistor smd JR power diode 40 ksr 12
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL • High-speed switching DESCRIPTION 1 g gate • No secondary breakdown 2 s source • Direct interface to C-MOS, TTL etc.


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    PDF BSH103 MAM273 BSH103 power diode 12 ksr 04 smd transistor 24 sot23 N-channel mos sot23 transistor smd JR power diode 40 ksr 12

    ld smd transistor

    Abstract: smd transistor LD BSP250 transistor SMD QQ smd transistor js transistor SMD BP
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - SOT223 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 g gate • Very low on-resistance. 2 d drain 3 s source


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    PDF OT223 BSP250 MAM121 1997Jun OT223 ld smd transistor smd transistor LD transistor SMD QQ smd transistor js transistor SMD BP

    BSP030

    Abstract: TRANSISTOR ML SMD MGD72
    Text: DISCRETE SEMICONDUCTORS BSP030 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 Philips Semiconductors 1997 Mar 13 PHILIPS Philips Semiconductors Product specification


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    PDF BSP030 OT223 OT223. BSP030 TRANSISTOR ML SMD MGD72

    transistor RJH 30

    Abstract: BSP090 ld smd transistor LD 33
    Text: DISCRETE SEMICONDUCTORS BSP090 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 Philips Semiconductors 1997 Mar 13 PHILIPS Philips Semiconductors Product specification


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    PDF BSP090 OT223 OT223 OT223. transistor RJH 30 BSP090 ld smd transistor LD 33

    smd transistor ne c2

    Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
    Text: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor


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    PDF BLF2048 OT539A smd transistor ne c2 smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30

    MARKING SMD transistor 12X

    Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
    Text: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


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    PDF BST120 7Z94272 7Z21S40 MARKING SMD transistor 12X smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U

    702 transistor smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL PARAMETER V ds drain-source voltage Id


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    PDF 2N7002 702 transistor smd TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702

    Untitled

    Abstract: No abstract text available
    Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


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    PDF bh53131 00E3T77 BST120

    Untitled

    Abstract: No abstract text available
    Text: • bbS3^31 0023=155 33^ HIAPX N AUER PHILIPS/DISCRETE BST80 b?E D y v N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r application with relay, high-speed


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    PDF BST80

    smd transistor marking 2y

    Abstract: m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g gate • No secondary breakdown. 2


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    PDF BSN20 1997Jun smd transistor marking 2y m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p

    02p SMD TRANSISTOR

    Abstract: No abstract text available
    Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application


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    PDF bbS3131 BST82 175DSon 02p SMD TRANSISTOR

    02p SMD TRANSISTOR

    Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
    Text: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application


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    PDF BST82 BST82 RDSonat25Â 02p SMD TRANSISTOR BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p

    Untitled

    Abstract: No abstract text available
    Text: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a


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    PDF PMBF170 bb53T31 00ES81E

    TRANSISTOR SMD MARKING CODE pKX

    Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
    Text: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed


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    PDF PMBF170 200rnA bbS3T31 TRANSISTOR SMD MARKING CODE pKX TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible


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    PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) PHB21N06LT OT428 OT428

    TRANSISTOR SMD MARKING CODE SP

    Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL


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    PDF BSS84 1997Jun TRANSISTOR SMD MARKING CODE SP smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23

    smd transistor A15 HB

    Abstract: PHILIPS 433003036301 smd TRANSISTOR 1702 37281 2222-581 BLF2045
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 2000 Jan 04 Philips Semiconductors 2000 Feb 17 PHILIPS Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 FEATURES PINNING - SOT467C • High power gain PIN DESCRIPTION


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    PDF BLF2045 OT467C) OT467C smd transistor A15 HB PHILIPS 433003036301 smd TRANSISTOR 1702 37281 2222-581 BLF2045

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification P-channel enhancement mode »*« 0 . - * MOS transistor . BSH206 FEATURES PINNING - SOT363 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 d drain • Direct interface to C-MOS, TTL, etc.


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    PDF BSH206 OT363 MAM367

    Untitled

    Abstract: No abstract text available
    Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed


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    PDF bL53T31 0025b57 BST86 0D35bbD BST86

    ld smd transistor

    Abstract: hat25 BSP255
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP255 FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL etc PIN SYMBOL • Low threshold voltage 1 g gate • High speed switching 2 d drain 3 s source


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    PDF BSP255 OT223 OT223 MBH439 711DflSb 010S101 MSA035 OT223. 711002b ld smd transistor hat25 BSP255

    smd transistor 2g

    Abstract: N06LT PHB21N06LT PHD21N06LT PHP21N06LT SC18 T0220AB N06L SMD footprint design
    Text: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • PH P21N 06LT, P H B 21N 06LT P H D 21N 06LT ’Trench’ technology Low on-state resistance Fast switching Logic level compatible


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    PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) OT404 PHD21N0. PHP21 N06LT, smd transistor 2g N06LT PHD21N06LT SC18 T0220AB N06L SMD footprint design

    C16dJ

    Abstract: smd transistor G18 smd transistor rc3 rogers 5880 BLF861 uhf tv power transistor 250 w smd L19 TRANSISTOR SMD w2 UT70-25 multilayer ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 Sep 02 Philips Sem iconductors 2000 Feb 18 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT54QA • High power gain PIN


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    PDF BLF861 OT540A SQT540A C16dJ smd transistor G18 smd transistor rc3 rogers 5880 BLF861 uhf tv power transistor 250 w smd L19 TRANSISTOR SMD w2 UT70-25 multilayer ceramic capacitor