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    SMD TRANSISTOR BCP56 Search Results

    SMD TRANSISTOR BCP56 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR BCP56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


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    PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    BCP56

    Abstract: No abstract text available
    Text: BCP56; BCX56; BC56PA 80 V, 1 A NPN medium power transistors Rev. 9 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


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    PDF BCP56; BCX56; BC56PA BCP56 OT223 SC-73 BCP53 BCX56 SC-62 O-243 BCP56

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Medium Power Transistor BCP56 -16 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages


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    PDF BCP56 OT-223

    smd transistor js

    Abstract: smd transistor bcp56 transistor bcp56 bcp55 bcp54 smd transistor BCP54 bcp55 to BCP56 bcp55 sot BCP54-10
    Text: Transistors SMD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High collector current +0.1 3.00-0.1 1.3 W power dissipation. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1


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    PDF BCP54; BCP55; BCP56 OT-223 BCP55 BCP54 smd transistor js smd transistor bcp56 transistor bcp56 bcp55 bcp54 smd transistor BCP54 bcp55 to BCP56 bcp55 sot BCP54-10

    Untitled

    Abstract: No abstract text available
    Text: BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 — 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


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    PDF BCP53; BCX53; BC53PA BCP53 OT223 SC-73 BCP56 BCX53 SC-62 O-243

    BCP64

    Abstract: No abstract text available
    Text: BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 — 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


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    PDF BCP53; BCX53; BC53PA BCP53 BCX53 SC-73 SC-62 O-243 BCP56 BCP64

    NPN medium power transistor in a smd

    Abstract: TRANSISTOR SMD MARKING CODE 9339 TRANSISTOR SMD MARKING CODE R 73 bcp56 Transistor SMD marking code NV bcp55 smd transistors smd code marking LP Philips marking code sot223 BCP56-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP54; BCP55; BCP56 NPN medium power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56


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    PDF M3D087 BCP54; BCP55; BCP56 BCP56 OT223 BCP51, BCP52 NPN medium power transistor in a smd TRANSISTOR SMD MARKING CODE 9339 TRANSISTOR SMD MARKING CODE R 73 Transistor SMD marking code NV bcp55 smd transistors smd code marking LP Philips marking code sot223 BCP56-16

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


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    PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    philips power transistor bd139

    Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
    Text: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors


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    PDF AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd

    IP4223CZ6

    Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
    Text: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our


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    PDF OD882 OT883 PVR100AD-B12V PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF

    TRANSISTOR SMD MARKING CODE UA

    Abstract: 2003 SMD IC marking code 33 SMD ic smd transistor bcp53 MARKING SMD PNP TRANSISTOR R 172 bcp53 SMD transistor MARKING SMD PNP TRANSISTOR medium power transistors SMD IC marking 115 MARKING SMD PNP TRANSISTOR R
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53


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    PDF M3D087 BCP51; BCP52; BCP53 BCP53 OT223 BCP54, BCP55 TRANSISTOR SMD MARKING CODE UA 2003 SMD IC marking code 33 SMD ic smd transistor bcp53 MARKING SMD PNP TRANSISTOR R 172 bcp53 SMD transistor MARKING SMD PNP TRANSISTOR medium power transistors SMD IC marking 115 MARKING SMD PNP TRANSISTOR R

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    PTF141501A

    Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
    Text: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent


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    PDF PTF141501A PTF141501A a150-watt, LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56

    SMD Marking Code 43a

    Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


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    PDF BC640; BCP53; BCX53 BC640 BCP53 SC-43A SC-73 SC-62 O-243 SMD Marking Code 43a BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF

    PTF141501E

    Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
    Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital


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    PDF PTF141501E PTF141501F PTF141501E 150-watt, PTF141501E* PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56

    A 673 C2 transistor

    Abstract: LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND
    Text: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging


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    PDF PTF141501E PTF141501E 150-watt, H-30260-2 A 673 C2 transistor LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND

    smd transistor A006

    Abstract: No abstract text available
    Text: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging


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    PDF PTF141501E PTF141501E 150-watt, H-30260-2 smd transistor A006

    list of P channel power mosfet

    Abstract: BT151 MOSFET Transistor smd BQ 22 SSTU32964 smd transistor bq 22 A114 pnp TEA1620P equivalent BQ 24 smd semiconductors TEA1622 SMD Transistor PNP Switching circuit, Inverter, Interface circuit, Driver circuit
    Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 3 ■ AUGUST 2004 Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. In this issue: In addition to discovering some of the key features and benefits of some of our most recent


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    PDF P89LPC932A1 LPC932 OT416 PBSS5480X SSTU32864, SSTU32865, SSTU3286 list of P channel power mosfet BT151 MOSFET Transistor smd BQ 22 SSTU32964 smd transistor bq 22 A114 pnp TEA1620P equivalent BQ 24 smd semiconductors TEA1622 SMD Transistor PNP Switching circuit, Inverter, Interface circuit, Driver circuit

    LM7805 M SMD

    Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


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    PDF PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v

    PTF082001E

    Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
    Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest


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    PDF PTF082001E PTF082001F PTF082001E PTF082001F 200-watt, PTF082001F* IS-95 17erous atc 1725 LM7805 smd smd transistor infineon 106T BCP56 106T capacitor

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


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    PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1

    LM7805 smd

    Abstract: LM7805 smd transistor marking C14
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency


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    PDF PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


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    PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60