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    SMD TRANSISTOR A6 23 Search Results

    SMD TRANSISTOR A6 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR A6 23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


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    HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor PDF

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


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    HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10 PDF

    Y5 smd

    Abstract: y6 smd transistor ACS04MS "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03
    Text: ACS04MS Data Sheet November 1998 File Number Radiation Hardened Hex Inverter Features The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.


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    ACS04MS ACS04MS MIL-PRF-38535 Y5 smd y6 smd transistor "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03 PDF

    cmos SENSOR 15um

    Abstract: smd transistor y5 y6 smd transistor 5962F9862301V9A 5962F9862301VCC 5962F9862301VXC ACS14DMSR-03 ACS14HMSR-03 ACS14KMSR-03 ACS14MS
    Text: ACS14MS Data Sheet Radiation Hardened Hex Inverting Schmitt Trigger The Radiation Hardened ACS14MS is a Hex Inverting Schmitt Trigger. This device simply inverts the level present on each input. The Schmitt Trigger input stage provides 400mV Min of hysteresis and permits input signals with


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    ACS14MS ACS14MS 400mV cmos SENSOR 15um smd transistor y5 y6 smd transistor 5962F9862301V9A 5962F9862301VCC 5962F9862301VXC ACS14DMSR-03 ACS14HMSR-03 ACS14KMSR-03 PDF

    y4 smd

    Abstract: 5962F9860201V9A 5962F9860201VCC 5962F9860201VXC ACS05DMSR-03 ACS05MS
    Text: ACS05MS Data Sheet Radiation Hardened Hex Inverter with Open Drain Outputs The Radiation Hardened ACS05MS is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW level on the input causes the corresponding Y output to enter


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    ACS05MS ACS05MS MIL-PRF-38535 y4 smd 5962F9860201V9A 5962F9860201VCC 5962F9860201VXC ACS05DMSR-03 PDF

    smd transistor a9

    Abstract: A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T smd transistor a9 A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28 PDF

    6kaa

    Abstract: SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28
    Text: HS-6664RH-T TM Data Sheet July 1999 Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HS-6664RH-T 100kRAD FN4609 MIL-PRF-38535 HS-6664RH-T 6kaa SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28 PDF

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


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    HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC PDF

    smd transistor A6

    Abstract: smd transistor A6 3 TFDS3000 Telefunken ir receiver SMD a6 Transistor a6 smd transistor
    Text: TFDS3000 Integrated Infrared Transceiver Module IrDA SIR Description The TFDS3000 is an infrared transceiver for data communication systems. The transceiver is compatible to the IrDA standard which allows data rates up to 115 kB/s. An internal AGC (Automatic Gain Control) ensures


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    TFDS3000 TFDS3000 D-74025 15-Aug-96 smd transistor A6 smd transistor A6 3 Telefunken ir receiver SMD a6 Transistor a6 smd transistor PDF

    ta 6203

    Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
    Text: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced


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    HM-65262 70/85ns HM-65262 ta 6203 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 PDF

    smd transistor A13

    Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
    Text: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced


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    HM-65262 70/85ns HM-65262 smd transistor A13 A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 PDF

    26256

    Abstract: smd transistor A13 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
    Text: HM-65262 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced


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    HM-65262 70/85ns HM-65262 26256 smd transistor A13 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 PDF

    transistor r1012

    Abstract: npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559
    Text: AN7852 EVALUATION BOARD APPLICATION NOTE FEATURES CAPABILITIES AND APPLICATIONS • Dual Channel Analog Input • 10-Bit Resolution • Conversion RateUp to 20 MSPS • On-Board Clock Driver • On-Board Adjustable References • Input Buffers With Adjustable Offset Level


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    AN7852 10-Bit SPT7852 10-bit transistor r1012 npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACS05MS Semiconductor N o vem ber 1998 D ata S h eet Radiation Hardened Hex Inverter with Open Drain Outputs The Radiation Hardened ACS05MS is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW


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    ACS05MS ACS05MS MIL-PRF-38535 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan
    HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Semiconductor December 1998 Data Sheet File Num ber Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS PDF

    cmos 4544

    Abstract: smd transistor y3
    Text: ACS14MS Semiconductor D a ta S h e e t Radiation Hardened Hex Inverting Schmitt Trigger The Radiation Hardened ACS14MS is a Hex Inverting Schmitt Trigger. This device simply inverts the level present on each input. The Schmitt Trigger input stage provides


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    ACS14MS ACS14MS 400mV 1-800-4-HARRIS cmos 4544 smd transistor y3 PDF

    smd transistor y2

    Abstract: transistor smd Y2
    Text: ACS05MS Semiconductor N o v e m b e r 1998 D a ta S h e e t Radiation Hardened Hex Inverter with Open Drain Outputs The Radiation Hardened ACS05MS is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW


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    ACS05MS ACS05MS 1-800-4-HARRIS smd transistor y2 transistor smd Y2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACS14MS Semiconductor Data Sheet Radiation Hardened Hex Inverting Schmitt Trigger The Radiation Hardened ACS14MS is a Hex Inverting Schmitt Trigger. This device simply inverts the level present on each input. The Schmitt Trigger input stage provides 400mV Min of hysteresis and permits input signals with


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    ACS14MS ACS14MS 400mV 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: SB H A R R HM-65262 IS S E MI C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Fast Access T im e .70/85n* Max Low Standby Current. 50nA Max


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    HM-65262 70/85n* PDF

    Untitled

    Abstract: No abstract text available
    Text: ACS04MS Semiconductor N o v e m b e r 1998 D a ta S h e e t F ile N u m b e r Radiation Hardened Hex Inverter Features The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for


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    ACS04MS ACS04MS 1-800-4-HARRIS PDF

    HM1-65262-9

    Abstract: No abstract text available
    Text: HARRIS S E M ICON SECTOR f Ì> H U U S E M I C O N D U C T O R A R R MbE D • M3G2271 DD3Tlb7 5 * H A S HM-65262 I S 2 3 - 0 5 1 6 K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Features Fast A ccess T im e . . 70/85nsM ax


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    M3G2271 HM-65262 70/85nsM HM1-65262-9 PDF

    transistor smd hq

    Abstract: No abstract text available
    Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which


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    HM-65642 HM-65642 80C86 80C88 transistor smd hq PDF

    E2 SMD Transistor

    Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
    Text: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.


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    HM-65642 HM-65642 80C86 80C88 E2 SMD Transistor SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883 PDF