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    SMD TRANSISTOR 5C L Search Results

    SMD TRANSISTOR 5C L Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 5C L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD TRANSISTOR MARKING 5c

    Abstract: smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration


    Original     		PDF OT-23 CMBT4124 C-120 SMD TRANSISTOR MARKING 5c smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23

    smd transistor 5c sot-23

    Abstract: SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT4124 C-120 smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn

    smd transistor 5c sot-23

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2


    Original     		PDF OT-23 CMBT4124 C-120 smd transistor 5c sot-23

    5g smd transistor

    Abstract: SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807â BC807-40 BC808â 5g smd transistor SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23

    smd 5H transistor

    Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd 5H transistor 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    SMD TRANSISTOR MARKING 5c

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT4124 C-120 SMD TRANSISTOR MARKING 5c

    smd 5H transistor

    Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c 5B smd transistor data smd transistor 5c smd transistor marking 5D SMD TRANSISTOR MARKING 5c bc807 5C smd bc807 smd diode 5H
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D


    Original     		PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd 5H transistor 5g smd transistor SMD TRANSISTOR MARKING 5c 5B smd transistor data smd transistor 5c smd transistor marking 5D SMD TRANSISTOR MARKING 5c bc807 5C smd smd diode 5H

    sot89 footprint

    Abstract: TRANSISTOR SMD MARKING CODE 5c PBSS302NX SMD TRANSISTOR MARKING 5c SOT89 smd marking 20 TRANSISTOR SMD CODE PACKAGE SOT89 PBSS302PX transistor marking codes K 044
    Text: PBSS302NX 20 V, 5.3 A NPN low VCEsat BISS transistor Rev. 01 — 24 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS302NX SC-62/TO-243) PBSS302PX. PBSS302NX sot89 footprint TRANSISTOR SMD MARKING CODE 5c SMD TRANSISTOR MARKING 5c SOT89 smd marking 20 TRANSISTOR SMD CODE PACKAGE SOT89 PBSS302PX transistor marking codes K 044

    ag20a

    Abstract: E3122 E3122A Q67060-S6204-A2 Q67060-S6204-A3
    Text: PROFET BTS 432 I2 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 VLoad dump • Clamp of negative voltage at output Vbb-VOUT Avalanche • Short-circuit protection Vbb operation) • Current limitation


    Original     		PDF 1999-Mar ag20a E3122 E3122A Q67060-S6204-A2 Q67060-S6204-A3

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS

    bts 425 l1

    Abstract: BTS425 425L1 BTS425L1 BTS 425
    Text: PROFET BTS 425 L1 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short circuit protection • Thermal shutdown


    Original     		PDF O-220AB/5 systems17) O-220AB/5, E3043 BTS425L1 E3043 Q67060-S6100-A4 bts 425 l1 BTS425 425L1 BTS 425

    Untitled

    Abstract: No abstract text available
    Text: PBSS302NX 20 V, 5.3 A NPN low VCEsat BISS transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS302NX SC-62/TO-243) PBSS302PX. PBSS302NX

    800w class d circuit diagram schematics

    Abstract: SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 4V/800W 800w class d circuit diagram schematics SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Text: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5 04N60S 04n60
    Text: SPP04N60S5 SPB04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5 04N60S 04n60

    TRANSISTOR 12N50C3

    Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
    Text: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB12N50C3 P-TO263-3-2 Q67040-S4641 12N50C3 TRANSISTOR 12N50C3 12N50C3 SPB12N50C3 SPP12N50C3

    FD-8 jack board

    Abstract: 8F SMD Transistor crystal 24.000 RCC-2184-ND FZT705TA transistor SMD 6b Y SMD Transistor WU2 MMBT3904LT1G smd transistor 8g smd transistor 6g
    Text: AN-1006 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Using the EVAL-ADUSB2EBZ by Brett Gildersleeve The ribbon cable and 10-pin header form a bridge to the target


    Original     		PDF AN-1006 10-pin standard56-I/ST ADG721BRMZ 24AA256-I/ST-ND CY7C68053-56BAXI FXLP34P5XCT-ND ADP1711AUJZ-1 ADP1711AUJZ-3 FD-8 jack board 8F SMD Transistor crystal 24.000 RCC-2184-ND FZT705TA transistor SMD 6b Y SMD Transistor WU2 MMBT3904LT1G smd transistor 8g smd transistor 6g

    BTS426L1

    Abstract: INFINEON transistor bts426l1 E3043 E3062 E3062A Q67060-S6108-A2 Q67060-S6108-A3 Q67060-S6108-A4 425L1 ST SMD SCR
    Text: PROFET BTS426L1 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection including load dump • Fast demagnetization of inductive loads • Reverse battery protection1)


    Original     		PDF BTS426L1 O-22tances. 2003-Oct-01 BTS426L1 INFINEON transistor bts426l1 E3043 E3062 E3062A Q67060-S6108-A2 Q67060-S6108-A3 Q67060-S6108-A4 425L1 ST SMD SCR

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
    Text: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		PDF SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 12N50C3 TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2

    diode s426

    Abstract: transistor smd 1FT 5C smd BTS426L1 siemens profet description smd transistor 5c l smd transistor kn E3043 E3062 E3062A
    Text: • 0235bOS ODÔlMSâ O^b S IEM EN S PROFET BTS426L1 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 60 VLoad dump Clamp of negative voltage at output 47 Vbb-VouT Avalanche Clamp


    OCR Scan     		PDF 0235bOS BTS426L1 A23SbDS O-22DAB/5 Q67060-S6108-A2 wt051s5 O-22QAB/5, E3043 diode s426 transistor smd 1FT 5C smd BTS426L1 siemens profet description smd transistor 5c l smd transistor kn E3062 E3062A

    Untitled

    Abstract: No abstract text available
    Text: fl235b05 ODfllSCH 3ññ SIEMENS PROFET BTS 432 12 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 80 H o a d dump • Clamp of negative voltage at output 58 Vbb-VouT Avalanche Clamp • Short-circuit protection


    OCR Scan     		PDF fl235b05 A235L

    AJB-4

    Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
    Text: SIEM ENS ñ23SbüS 00*12701 T07 H PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * * * * * * * * * * * * Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output Vbb- V buT Avalanche Short-circuit protection


    OCR Scan     		PDF 235b05 TQ-220AB/5 Q67060-S6204-A2 O-22QAB/5, E3122 I2E3122A Q67060-S6204-A3 023SbGS AJB-4 BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l