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    SMD TRANSISTOR 1Z Search Results

    SMD TRANSISTOR 1Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR 1Z Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CMBT6517

    Abstract: transistor marking SA p sot-23 ts 4141 TRANSISTOR smd
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT6517 HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    OT-23 CMBT6517 C-120 CMBT6517 transistor marking SA p sot-23 ts 4141 TRANSISTOR smd PDF

    CMBT6517

    Abstract: smd transistor 1Z
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT6517 HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    OT-23 CMBT6517 C-120 CMBT6517 smd transistor 1Z PDF

    CMBT6517

    Abstract: smd transistor 1Z
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT6517 HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER


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    ISO/TS16949 OT-23 CMBT6517 C-120 CMBT6517 smd transistor 1Z PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT6517 HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS


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    OT-23 CMBT6517 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT6517 HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    OT-23 CMBT6517 C-120 PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB55XP DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: PMDPB55XP
    Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench


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    PMDPB55XP OT1118 g1 TRANSISTOR SMD MARKING CODE PMDPB55XP PDF

    DFN2020-6

    Abstract: No abstract text available
    Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


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    PMDPB55XP DFN2020-6 OT1118) DFN2020-6 PDF

    smd TRANSISTOR 27e

    Abstract: TRANSISTOR SMD a38 smd 27E
    Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


    OCR Scan
    QQ03M37 CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 ii54i smd TRANSISTOR 27e TRANSISTOR SMD a38 smd 27E PDF

    transistor 41 74t

    Abstract: smd TRANSISTOR 27e
    Text: d U A L I T Y - T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E ì> 74bhfl51 □ □ □ 3 5 5 1 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS _ T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z PACKAGE DIMENSIONS ifil DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide


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    74bhfl51 T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 MCT2200â MCT2201â transistor 41 74t smd TRANSISTOR 27e PDF

    Untitled

    Abstract: No abstract text available
    Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62


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    Q0G34SS H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, MCT9001 PDF

    a36 smd transistor

    Abstract: transistor smd 4z
    Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED


    OCR Scan
    bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z PDF

    smd diode UJ 64 A

    Abstract: smd TRANSISTOR 27e
    Text: dUA LIT Ÿ TE CH NOL OGIE S CÔRP QUALITY TECHNOLOGIES 27E D 74bt.aSl 00034^5 7 VDE APPROVED NON-ZERO-CROSSING TRIACS T -U -2 7 MCP3020/0Z* MCP3021/1Z MCP3022/2Z PACKAGE DIMENSIONS db db DESCRIPTION The MCP3020, MCP3021 and MCP3022 are optically isolated


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    MCP3020/0Z* MCP3021/1Z MCP3022/2Z MCP3020, MCP3021 MCP3022 MCT9001 smd diode UJ 64 A smd TRANSISTOR 27e PDF

    smd 27E

    Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
    Text: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac


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    MCP3030* MCP3040/0Z* 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z MCP3031 MCP303Z smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031 PDF

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


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    Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z PDF

    16V16

    Abstract: No abstract text available
    Text: SIEMENS PROFET Target Data Sheet BTS660P Smart Highside High Current Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Overload protection Current limitation Short circuit protection Overtemperature protection


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    BTS660P O-22QAB/7 Q67060-S6308-A2 220AB/7, E3180 BTS660P E3180A Q67060-S6308-A4 1998-Dec-21 16V16 PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    BTS 410 E2 E3043

    Abstract: BTS 437 410e2 BTS410F2 Diode smd code f2 diode zener zp v2 1S77 235L 410H BTS410
    Text: fl235b05 QQB1S7S G5L S IE M E N S PROFET BTS410F2 Smart Highside Power Switch F eatures • • • • • • • • • • • • • P ro d u c t S um m ary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation


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    fl235b05 BTS410F2 O-22QAB/5 Q67060-S6103-A2 O-22QAB/5, E3043 E3043 Q67060-S6103-A3 E3062 BTS 410 E2 E3043 BTS 437 410e2 BTS410F2 Diode smd code f2 diode zener zp v2 1S77 235L 410H BTS410 PDF

    CPL-6731

    Abstract: transistor smd 1zc smd transistor marking 6n SA MARKING SMD mos
    Text: Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A* HCPL-675X 83024 HCPL-570X Technical Data 5962-89810 HCPL-573X HCPL-673X 5962-89785 *See m atrix for available ex ten sio n s. Features • Dual Marked w ith D evice Part Number and DESC


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    6N140A* HCPL-675X HCPL-570X HCPL-573X HCPL-673X MIL-PRF-38534 QML-38534, MIL-PRF-38534. CPL-6731 transistor smd 1zc smd transistor marking 6n SA MARKING SMD mos PDF

    SMD Transistor g14

    Abstract: BTS 433
    Text: •I Ö23SLGS □□C I2717 001 ■ SIEMENS PROFET BTS425L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation


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    I2717 BS425L BTS425L1 E3043 Q67060-S6100-A4 SMD Transistor g14 BTS 433 PDF

    TRANSISTOR SMD zwa

    Abstract: 425L1 zwa smd SMD diode JB bts 425 l1 smd zener diode code n0 SMD Transistor g14 BTS425 JB OL4 A2723
    Text: • 4 S 3 5 Í.0 5 00=12717 001 ■ SIEM EN S PROFET BTS 425 L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features * * * * * * * * * * * * Overload protection


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    0235bDS components161 systems17> TRANSISTOR SMD zwa 425L1 zwa smd SMD diode JB bts 425 l1 smd zener diode code n0 SMD Transistor g14 BTS425 JB OL4 A2723 PDF

    induction cooker fault finding diagrams

    Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
    Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when


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    Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200 PDF

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 PDF