MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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equivalent ZO 607
Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
equivalent ZO 607
2sc5872
2SC5849
HTT1132E
702 smd transistor
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT81
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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BLT81
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation
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Original
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BLT81
SC08b
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
BLT81
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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4894
Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
4894
SMD ic catalogue
BLT80
KM10
4312 020 36640
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2222 730
Abstract: BLT81
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT81
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
2222 730
BLT81
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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OCR Scan
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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993 395 pnp npn
Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10
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BRY61
BRY62
OT143B
993 395 pnp npn
bc237 smd sot23 package
transistor TO-92 bc108
TRANSISTOR BC337 SMD
702 TRANSISTOR smd SOT23
2PB601AQ
BC548 TRANSISTOR SMD
bc548 TO-92
Bd135 smd
2PC945Q
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SOT-23
Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
15min)
15min
20sec
1000cycle
96hrs
SOT-23
TRANSISTOR SMD fr 21
smd transistor ds 65
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NXP SMD TRANSISTOR MARKING CODE
Abstract: No abstract text available
Text: PBSS4560PA 60 V, 6 A NPN low VCEsat BISS transistor Rev. 1 — 19 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4560PA
OT1061
PBSS5560PA.
NXP SMD TRANSISTOR MARKING CODE
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Untitled
Abstract: No abstract text available
Text: PBSS4560PA 60 V, 6 A NPN low VCEsat BISS transistor Rev. 1 — 19 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4560PA
OT1061
PBSS5560PA.
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09N03LA
Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
P-TO252-3-11
P-TO252-3-23
09N03LA
09N03
diode marking 321
09N03LA datasheet
09N03LA equivalent
P-TO251-3-1
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SMBJ11CA
Abstract: SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA
Text: Diodes SMD Type PowerMOS transistor Logic level TOPFET SMBJ5V0 C A - SMBJ170(C)A • Features ● Glass passivated junction. DO-214AA(SMB) ● 600W Peak Pulse Power capability on Unit: mm 4.12 3.92 4.699 4.064 2.108 1.905 10/1000 s waveform. 3.937 3.302
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SMBJ170
DO-214AA
SMBJ78
SMBJ85
SMBJ90
SMBJ100
SMBJ110
SMBJ120
SMBJ130
SMBJ150
SMBJ11CA
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
SMBJ13CA
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09N03LA
Abstract: IPS09N03LA IPD09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent IPF09N03LA IPU09N03LA P-TO252-3-11
Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
P-TO252-3-11
P-TO252-3-23
09N03LA
09N03
09N03LA datasheet
09N03LA equivalent
IPU09N03LA equivalent
P-TO252-3-11
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IPS09N03LA
Abstract: IPD09N03LA
Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
PG-TO252-3-11
Q67042-S4268
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09n03la
Abstract: IPS09N03LA IPD09N03LA 09n03
Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
PG-TO252-3-11
Q67042-S4268
09n03la
09n03
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09N03LA
Abstract: No abstract text available
Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
P-TO252-3-11
P-TO252-3-23
09N03LA
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09n03la
Abstract: IPD09N03LA
Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
P-TO252-3-11
09N03LA
09n03la
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Untitled
Abstract: No abstract text available
Text: PMN50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN50UPE
OT457
SC-74)
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k22 sot23
Abstract: semiconductor date Code smd-transistor
Text: Labeling Specification LABEL SPECS 167 Labeling Specification Central Semiconductor Corp. www.centralsemi.com CENTRAL - ® - 1.0 Purpose: Sem iconductor Devices C M K T 2 2 2 2 A TR ITEM. SMD-TRANSISTOR D E S C R IP T IO N . ®"pr ~ Discrete CUSTOMER ITEM.
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OCR Scan
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M96286
k22 sot23
semiconductor date Code
smd-transistor
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09n03la
Abstract: 09N03LA datasheet 09N03LA equivalent IPS09N03LA 09N03 IPD09N03LA 09N03L smd diode code sd IPF09N03LA IPU09N03LA
Text: OptiMOS 2 Power-Transistor IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID 50 A • N-channel, logic level
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IPD09N03LA
IPS09N03LA
IPF09N03LA
IPU09N03LA
P-TO252-3-11
P-TO252-3-23
09n03la
09N03LA datasheet
09N03LA equivalent
IPS09N03LA
09N03
IPD09N03LA
09N03L
smd diode code sd
IPF09N03LA
IPU09N03LA
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