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    SMD MOSFET CODE S5 Search Results

    SMD MOSFET CODE S5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SMD MOSFET CODE S5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    smd diode code g3

    Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
    Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C


    Original     		160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD 160-0055X1 smd diode code g3 smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6 PDF

    smd diode S4

    Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		220-004P3 diod007 20070628b 220-004P3-SL 220-04P3-BL 220-004P3 smd diode S4 smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5 PDF

    smd diode S6

    Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		220-004P3 220-003P3-SMD 220-004P3 20081126f smd diode S6 smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6 PDF

    smd diode S4

    Abstract: No abstract text available
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		220-004P3 100-01X1-SMD 220-004P3 20070906c smd diode S4 PDF

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77 PDF

    SMD MARKING code L1

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ PDF

    smd diode g6

    Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		220-004P3 220-003P3-SMD 220-004P3 20080527e smd diode g6 smd S4 36 SMD diode MARKING CODE g6 smd g5 PDF

    SMD MARKING QG 6 PIN

    Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 100-085X1-SMD 100-0085X1 100-0085X1 SMD MARKING QG 6 PIN smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A PDF

    S4 42 DIODE

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
    Text: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 IF110 ID110 100-0085X1-SMD 100-0085X1 100-0085X1 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37 PDF

    S4 42 DIODE

    Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		GWM100-0085X1 ID110 IF110 100-0085X1 100-0085X1-SMD 100-0085X1 S4 42 DIODE smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37 PDF

    L6710

    Abstract: L6710TR TQFP44 VRD10 Synchronous-Rectified Buck Converter
    Text: L6710 6 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT


    Original     		L6710 150kHz TQFP44 L6710TRo L6710 L6710TR TQFP44 VRD10 Synchronous-Rectified Buck Converter PDF

    DIODE marking S6 57

    Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
    Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		GMM3x60-015X1 IF110 ID110 3x60-015X1 3x60-015X1 DIODE marking S6 57 DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE PDF

    IXYS GMM 3x160-0055X2

    Abstract: marking G3 smd diode g6 3x160-0055X2
    Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 IXYS GMM 3x160-0055X2 marking G3 smd diode g6 PDF

    SMD mosfet MARKING code TC

    Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
    Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2 SMD mosfet MARKING code TC smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57 PDF

    DIODE S6 marking code

    Abstract: smd diode g6 Diode smd s6 95 marking G3 3x100-01X1 smd diode code S5
    Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01X1 3x100-01X1 DIODE S6 marking code smd diode g6 Diode smd s6 95 marking G3 smd diode code S5 PDF

    75WX100GD

    Abstract: No abstract text available
    Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01X1 3x100-01X1 75WX100GD PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01X1 3x100-01X1 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM 3x120-0075X2 VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x120-0075X2 3x120-0075X2 PDF

    Diode smd s6 95

    Abstract: No abstract text available
    Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01X1 3x100-01X1 Diode smd s6 95 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM 3x100-01X1 VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01X1 3x100-01X1 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055X2 3x160-0055X2 PDF

    IF110

    Abstract: smd diode code g6 smd diode g6 3x60-015X2 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode
    Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2 IF110 smd diode code g6 smd diode g6 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode PDF