transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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OCR Scan
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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PDF
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"marking E1"
Abstract: BFS17R BFS17 d 1556 transistor
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1
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BFS17/BFS17R
BFS17
BFS17R
D-74025
16-Oct-97
"marking E1"
d 1556 transistor
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PDF
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BFS17
Abstract: transistor BFs 18 BFS17R marking E1
Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BFS17
BFS17R
D-74025
transistor BFs 18
marking E1
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smd marking nf
Abstract: S21E S21E-2 2SC3429 nf smd marking
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1
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2SC3429
OT-23
500MHz)
500MHz
smd marking nf
S21E
S21E-2
2SC3429
nf smd marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1
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2SC3429
OT-23
500MHz)
500MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1
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2SC3099
OT-23
500MHz)
500MHz
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PDF
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S21E
Abstract: S21E-2 2SC3099 nf smd marking
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1
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2SC3099
OT-23
500MHz)
500MHz
S21E
S21E-2
2SC3099
nf smd marking
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PDF
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marking MA
Abstract: 2SC3011
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SC3011
OT-23
marking MA
2SC3011
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marking mh
Abstract: 2SC3606
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1
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2SC3606
OT-23
marking mh
2SC3606
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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2SC3606
OT-23
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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2SC3098
OT-23
500MHz)
500MHz
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sot-23 Marking Mb
Abstract: 2SC3098 S21E-2 Marking MB
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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2SC3098
OT-23
500MHz)
500MHz
sot-23 Marking Mb
2SC3098
S21E-2
Marking MB
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes IC SMD Type Product specification 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics
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2SA1978
OT-23
-15mA
-15mA,
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transistor marking T93
Abstract: PNP 5GHz TRANSISTOR PNP 5GHz PT-200 2SA1978
Text: Transistors IC SMD Type PNP Eitaxial Silicon Transistor 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics
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2SA1978
OT-23
-15mA
200ameter
-15mA,
transistor marking T93
PNP 5GHz
TRANSISTOR PNP 5GHz
PT-200
2SA1978
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PDF
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PT-200
Abstract: 2SA1977 Marking T92 SOT marking t92 TRANSISTOR SMD 1301
Text: Transistors IC SMD Type PNP Epitaxial Silicon Transistor 2SA1977 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High gain 0.55 High fT :fT = 8.5 GHz TYP. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA
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2SA1977
OT-23
PT-200
2SA1977
Marking T92 SOT
marking t92
TRANSISTOR SMD 1301
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smd transistor w1a
Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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CX-49G,
CX-40F
HC-49/U
HC-49U-S
31-Dec-04
CX-49L
smd transistor w1a
smd transistor w1a 25
W1A smd transistor
smd transistor gz
smd transistor marking A14
SMD W1A transistor
AVX tantalum marking
MARKING w1a SOT-23
smd transistor w1a 50
marking code NJ SMD Transistor
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PDF
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DIODE SMD T25
Abstract: 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv
Text: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0V RoHS Device Features SOT-23-6L ESD Protect for Transition Minimized Differential 0.140 2.90 BSC. Signaling(TMDS) Channels. Protect four I/O lines and one VDD line 0.063(1.60) BSC. 0.110(2.80)BSC. IEC61000-4-2 (ESD) ±8kV(Contact) ,±15kV(Air).
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CSRS065V0V
IEC61000-4-2
IEC61000-4-4
8/20uS)
OT-23-6L
OT-23-6L
MIL-STD-750
100ns
QW-BP011
DIODE SMD T25
25V DIODE SMD T25
ComChip Date code
br smd marking code
MARKING 1E9
Transition minimized differential signaling
Diode smd marking 44
055PF
DIODE 6kv
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Super Fast Rectifier SFM21-L THRU SFM28-L List List. 1 Package outline. 2
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SFM21-L
SFM28-L
MIL-STD-750D
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1021
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Super Fast Rectifier SFM21-L THRU SFM28-L List List. 1 Package outline. 2
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SFM21-L
SFM28-L
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
METHOD-1021
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PDF
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SMD diode s26
Abstract: smd diode marking s26
Text: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2
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SFM21-BS
SFM28-BS
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
METHOD-1021
SMD diode s26
smd diode marking s26
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2
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SFM21-BS
SFM28-BS
MIL-STD-750D
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1021
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Super Fast Rectifier SFM21-B THRU SFM28-B List List. 1 Package outline. 2
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SFM21-B
SFM28-B
MIL-STD-750D
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1021
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