smd hee
Abstract: smdj18ca
Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 3000 Watt Peak Power ■ Dimension Dim SMD DO-214AB ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 6.60 7.11 0.260 0.280 B 5.59 6.22 0.220
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DO-214AB)
SMDJ130A
SMDJ130CA
SMDJ150
SMDJ150C
SMDJ150A
SMDJ150CA
SMDJ160
SMDJ160C
SMDJ160A
smd hee
smdj18ca
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B82799S0513N001
Abstract: B78417A1967A003 EHP 16 B82791H2401N001 B78416 FERRITE CORE coil former B82442A1223K000 SMD INDUCTOR marking code UM B82721K2202N001 siemens ferrit core
Text: Product Profile 2007 Chokes and Inductors Drosseln und Induktivitäten www.epcos.com Welcome to the World of Electronic Components With its broad portfolio in electronic components EPCOS provides one-stop shopping for a comprehensive range of products and is market leader in Europe and
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smd hee
Abstract: No abstract text available
Text: SMD TVS - 3000W 3000 W Part No. Uni-Polar 3.0SMCJ5.0A 3.0SMCJ6.0A 3.0SMCJ6.5A 3.0SMCJ7.0A 3.0SMCJ7.5A 3.0SMCJ8.0A 3.0SMCJ8.5A 3.0SMCJ9.0A 3.0SMCJ10A 3.0SMCJ11A 3.0SMCJ12A 3.0SMCJ13A 3.0SMCJ14A 3.0SMCJ15A 3.0SMCJ16A 3.0SMCJ17A 3.0SMCJ18A 3.0SMCJ20A 3.0SMCJ22A
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0SMCJ10A
0SMCJ11A
0SMCJ12A
0SMCJ13A
0SMCJ14A
0SMCJ15A
0SMCJ16A
0SMCJ17A
0SMCJ18A
0SMCJ20A
smd hee
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equivalent des circuit integre ttl
Abstract: a103j RESISTOR 9 pin cepe ocxo Resistors A103G stc crystal A103j resistor network a103j network resistor a103j RESISTOR iqxo-531 C-MAC Quartz Crystals
Text: New Products. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv SAWs Profile of C-MAC Frequency Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii
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CD 5888 CB SMD IC
Abstract: A103j resistor network a103j RESISTOR smd diode S4 67A a103j network resistor a103j equivalent des circuit integre ttl C-MAc quartz a103g cepe ocxo
Text: New Products. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv SAWs Profile of C-MAC Frequency Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii
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G04N60
Abstract: PG-TO263-3-2 PG-TO-263-3-2 SGB04N60
Text: SGB04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGB04N60
G04N60
PG-TO-263-3-2
O-263AB)
G04N60
PG-TO263-3-2
PG-TO-263-3-2
SGB04N60
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G06N60
Abstract: PG-TO-220-3-1 SGD06N60 SGP06N60
Text: SGP06N60 SGD06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:
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SGP06N60
SGD06N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
G06Ntain
G06N60
PG-TO-220-3-1
SGD06N60
SGP06N60
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Untitled
Abstract: No abstract text available
Text: IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGP01N120H2
IGD01N120H2
PG-TO-252-3-1
PG-TO-220-3-1
G01Hances.
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Untitled
Abstract: No abstract text available
Text: SGP06N60 SGD06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:
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SGP06N60
SGD06N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD06N60
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g10n60
Abstract: No abstract text available
Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP02N60
SGD02N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD02N60
g10n60
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g04n60
Abstract: No abstract text available
Text: SGP04N60 SGD04N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G - Inverter • NPT-Technology for 600V applications offers:
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SGP04N60
SGD04N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD04N60
g04n60
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Untitled
Abstract: No abstract text available
Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGD02N120,
40lower
SGP02N120
SGI02N120
PG-TO-252-3-1
PG-TO-220-3-1
O-220AB)
O-252AA)
PG-TO-262-3-1
O-262)
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PG-TO252-3-11
Abstract: SGD02N120
Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGD02N120,
40lower
PG-TO-252-3-1
SGP02N120
SGI02N120
PG-TO-220-3-1
O-252AA)
O-220AB)
PG-TO-262-3-1
O-262)
PG-TO252-3-11
SGD02N120
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g01h1202
Abstract: smps 10w 12V smps* ZVT IGD01N120H2 IGP01N120H2 IKP01N120H2 PG-TO-220-3-1
Text: IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGP01N120H2
IGD01N120H2
PG-TO-252-3-1
PG-TO-220-3-1
G01H1202
g01h1202
smps 10w 12V
smps* ZVT
IGD01N120H2
IGP01N120H2
IKP01N120H2
PG-TO-220-3-1
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G06N60
Abstract: No abstract text available
Text: SGP06N60 SGD06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers:
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SGP06N60
SGD06N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD06N60
G06N60
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g01h1202
Abstract: 1000v 1A smps igbt 12V 1A
Text: IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGP01N120H2
IGD01N120H2
PG-TO-252-3-1
PG-TO-220-3-1
IGD01N120H2
140kHz
g01h1202
1000v 1A smps
igbt 12V 1A
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g10n60
Abstract: No abstract text available
Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP02N60
SGD02N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
SGD02N60
g10n60
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G15N60HS
Abstract: G15N60H
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGB15N60HS
PG-TO-263-3-2
O-263AB)
G15N60ces.
G15N60HS
G15N60H
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g10n60
Abstract: SGP02N60 pspice high frequency igbt SGD02N60 PG-TO-220-3-1 PG-TO252-3-11
Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP02N60
SGD02N60
PG-TO-252-3-1
PG-TO-220-3-1
O-252AA)
O-220AB)
G10N60
g10n60
SGP02N60
pspice high frequency igbt
SGD02N60
PG-TO-220-3-1
PG-TO252-3-11
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Untitled
Abstract: No abstract text available
Text: EPCOS Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: Date: B32671L8 December 2012 ŒPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32671L8
KMK0835-P-E
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Untitled
Abstract: No abstract text available
Text: EPCOS Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: Date: B32672L9 December 2012 ŒPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32672L9
KMK0835-P-E
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Untitled
Abstract: No abstract text available
Text: EPCOS Film Capacitors Metallized Polyester Film Capacitors MKT Series/Type: B32232 Date: August 2012 ŒPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32232
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Untitled
Abstract: No abstract text available
Text: EPCOS Film Capacitors Metallized Polyester Film Capacitors MKT Series/Type: Date: B32227 May 2009 ŒPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32227
KMK0832-Z-E
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Untitled
Abstract: No abstract text available
Text: EPCOS Film Capacitors Metallized Polypropylene Film Capacitors MKP Series/Type: Date: B32671Z . B32673Z December 2012 ŒPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B32671Z
B32673Z
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