marking 6a2 smd
Abstract: zener Z11B
Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C
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500mW
94Leakage
marking 6a2 smd
zener Z11B
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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smd diode a5
Abstract: DG1J2A smd diode marking a5 SMD MARKING CODE vk SHINDENGEN DIODE S71S
Text: Schottky Barrier Diode single Diode DG1J2A m n m o u t lin e Package G1F 20V 1.5A 3.5 Feature • Ö 'J ^ S M D |S711 • Ultra-small SMD • iS iS S =0.8 mm • I r= 10yA Unit I mm Weight 0.01 1r Typ 7 • Ultla-thin PKG=0.8mm • Low Ir=10a/A Cathode m ark
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OCR Scan
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PDF
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Scans-00828
Abstract: DE10PC3 SHINDENGEN DIODE 0336g
Text: Schottky Barrier Diode Twin Diode mnm DE10PC3 o u tlin e E-pack Package Unit I mm Weight 0.326k Typ r r« 30 V 10A œ - Feature • SMD • SMD • î 3 V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG 10PC3 n - y W X fW Date code Main Use
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OCR Scan
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DE10PC3
0336g
I-111,
J532-1)
Scans-00828
DE10PC3
SHINDENGEN DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*
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OCR Scan
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DE10SC3L
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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PDF
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CTLSH10-100L
Abstract: DIODE SMD 10A diode smd marking code 435 100L diode smd marking code 631
Text: Product Brief CTLSH10-100L TLM364 10A, 100V Low VF Schottky Rectifier in the TLM364 package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLSH10-100L is a high performance 10 Amp silicon Schottky rectifier designed for applications requiring
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CTLSH10-100L
TLM364
CTLSH10-100L
TLM364
com/info/CTLSH10-100L
DIODE SMD 10A
diode smd marking code 435
100L
diode smd marking code 631
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marking SMD crystal CODES
Abstract: Q 8,0-JXG75P2-12-30/100-T3-LF JTX310 Q25,0-SMU4-18-30/50-FU-LF JAUCH Quartz Crystals 16 Mhz Q8.0-SMU4-18-30/50-T1-LF
Text: F REQUENCY C ONTROL P RODUCTS JAUCH QUARTZ CRYSTALS individual working copy 03/11/14 THE SPECIALIST FOR FREQUENCY CONTROL PRODUCTS The Specialist for frequency control products Worldwide Presence expert advice by quartz crystal specialists Technical Customer Support
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JXG32P4
JXG53P4
JXG53P2
D-78056
marking SMD crystal CODES
Q 8,0-JXG75P2-12-30/100-T3-LF
JTX310
Q25,0-SMU4-18-30/50-FU-LF
JAUCH Quartz Crystals 16 Mhz
Q8.0-SMU4-18-30/50-T1-LF
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PDF
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mbr20400
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers SMD Diodes Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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MBR2030CT-G
MBR20150CT-G
O-220AB
O-220AB,
MBR2030CT-G~
MBR20400CT-G
QW-BB046
MBR2030CT-G
MBR2030CT
MBR2040CT-G
mbr20400
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MBR2060CT-G
Abstract: MBR20100CT-G
Text: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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MBR2030CT-G
MBR20150CT-G
O-220AB
O-220AB,
MBR2030CT-G~
MBR20400CT-G
QW-BB046
MBR2030CT-G
MBR2030CT
MBR2040CT-G
MBR2060CT-G
MBR20100CT-G
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PDF
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mbr20400
Abstract: No abstract text available
Text: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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MBR2030CT-G
MBR20150CT-G
O-220AB
O-220AB,
MBR2030CT-G~
MBR20400CT-G
QW-BB046
MBR2030CT-G
MBR2030CT
MBR2040CT-G
mbr20400
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15CJ6V8-G Thru. TV15CJ601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power : 1500Watts RoHS Device Features -Glass passivated chip. -1500W peak pulse power capability with a 10/1000 S waveform, repetitive rate
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TV15CJ6V8-G
TV15CJ601-G
1500Watts
-1500W
SMC/DO-214AB
DO-214AB
QW-BTV17
DO-214AB
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smd diode sod-323 marking code 500
Abstract: smd diode schottky code marking 1A DIODE SMD MARKING 5C smd diode 5c SOD-323 smd diode schottky code marking 63 diode smd marking 1A RB551V-30 smd diode 303
Text: SMD Schottky Barrier Diode SMD Diodes Specialist RB551V-30 RoHS Device Io = 500 mA V R = 20 Volts Features SOD-323 Low reverse current. Designed for mounting on small surface. 0.071 ( 1.80 ) 0.063 ( 1.60 ) Extremely thin / leadless package. Majority carrier conduction.
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RB551V-30
OD-323
OD-323
MILSTD-750D,
QW-BB026
smd diode sod-323 marking code 500
smd diode schottky code marking 1A
DIODE SMD MARKING 5C
smd diode 5c SOD-323
smd diode schottky code marking 63
diode smd marking 1A
RB551V-30
smd diode 303
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sanyo OS-CON sepc
Abstract: SANYO seqp marking code p42 SMD GAS SEPC 560 4 sanyo OS-CON sepc 100 16 10K 471 sanyo svpc series SEPC 560 6 16SVPF180M sanyo capacitors
Text: OS-CON INDEX Aluminum Solid Capacitors with Conductive Polymer Series integration OS-CON Line-up Guidelines and precautions for use Image of case size Products list Since the following models of the SVP and SVQP series have been integrated into models with a higher voltage
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16SEP330M
10SEP560M
6SEP820M
4SEP1200M
2R5SEP1500M
25SEP33M1
120Hz
10kHz
100kHz
sanyo OS-CON sepc
SANYO seqp
marking code p42 SMD
GAS SEPC 560 4
sanyo OS-CON sepc 100 16
10K 471
sanyo svpc series
SEPC 560 6
16SVPF180M
sanyo capacitors
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TVP06B15A
Abstract: No abstract text available
Text: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit.
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TVP06B6V8-G
TVP06B601-G
600Volts
SMB/DO-214AA
MIL-STD-750,
QW-BTV18
DO-214AA
TVP06B15A
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Untitled
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifiers SMD Diode Specialist MBRF1030CT-G Thru. MBRF10100CT-G Voltage: 30 to 100 V Current: 10.0 A RoHS Device Features ITO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. 0.118 3.00
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MBRF1030CT-G
MBRF10100CT-G
ITO-220AB
MBRF1080CT-G~
MBRF1030CT-G~
MBRF1045CT-G
QW-BB052
MBRF1030CT-G
MBRF1030CT
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MBRF1030CT-G
Abstract: MBRF1040CT-G MBRF1045CT-G MBRF1050CT-G MBRF1060CT-G MBRF1080CT-G MBRF10100CT-G
Text: Comchip Schottky Barrier Rectifiers SMD Diode Specialist MBRF1030CT-G Thru. MBRF10100CT-G Voltage: 30 to 100 V Current: 10.0 A RoHS Device Features ITO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. 0.118 3.00
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MBRF1030CT-G
MBRF10100CT-G
ITO-220AB
RF1080CT-G~
MBRF1030CT-G~
MBRF1045CT-G
QW-BB052
MBRF1030CT-G
MBRF1030CT
MBRF1040CT-G
MBRF1045CT-G
MBRF1050CT-G
MBRF1060CT-G
MBRF1080CT-G
MBRF10100CT-G
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NCP6131
Abstract: 6TPE150MAZB 6TPG100M SANYO 2R5TPE470M7 2TPE470M6 6TPE220MAZB 2TPLF470M4E 25TQC5R6M 2TPLF470M6 2TPE470M7
Text: Capacitors General Catalog 2010-7 Aluminum Solid Capacitors with Conductive Polymer Tantalum Solid Capacitors with Conductive Polymer www.edc.sanyo.com Feature Feature Solid electrolytic capacitors with conductive polymer to meet the needs of all electronic equipments in the world
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers RB551V-30-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 )
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RB551V-30-HF
OD-323
OD-323
MIL-STD-750D,
QW-JB011
002inch)
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diodes RB551V-30 Io = 500 mA V R = 20 Volts RoHS Device SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 ) 0.047(1.20) 0.014 ( 0.35 )
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RB551V-30
OD-323
OD-323
MIL-STD-750D,
QW-BB026
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PDF
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RB551V-30
Abstract: No abstract text available
Text: SMD Schottky Barrier Diodes RB551V-30 Io = 500 mA V R = 20 Volts RoHS Device SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 ) 0.047(1.20) 0.014 ( 0.35 )
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RB551V-30
OD-323
OD-323
MIL-STD-750D,
QW-BB026
RB551V-30
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PDF
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RB551V-30-HF
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers RB551V-30-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 )
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RB551V-30-HF
OD-323
OD-323
MIL-STD-750D,
QW-JB011
002inch)
RB551V-30-HF
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor TVP04A6V8-G Thru. TVP04A601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 400 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.179(4.55) 0.161(4.10) -400W peak pulse power capability with a 10/1000 s
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TVP04A6V8-G
TVP04A601-G
DO-214AC
-400W
DO-214AC,
MIL-STD-750,
QW-BTV21
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor TVP04A6V8-G Thru. TVP04A601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 400 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.179(4.55) 0.161(4.10) -400W peak pulse power capability with a 10/1000 s
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TVP04A6V8-G
TVP04A601-G
DO-214AC
-400W
DO-214AC,
MIL-STD-750,
QW-BTV21
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PDF
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