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    SMD L21 G Search Results

    SMD L21 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD L21 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd diode marking A7 SOT-23

    Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
    Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad


    OCR Scan     		OT-23 OT-143 PMLL4151 PMLL4153 PMLL4446 PMLL4448 OT-223 OT-143 smd diode marking A7 SOT-23 SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23 PDF

    L21 SMD

    Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
    Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1 PDF

    smd code marking A8 diode

    Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35


    Original     		M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification General purpose controlled avalanche double diodes_ FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:


    OCR Scan     		BAS29; BAS31; BAS35 BAS29 BAS31 M8H32 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector


    Original     		KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 PDF

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


    Original     		220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19 PDF

    Untitled

    Abstract: No abstract text available
    Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		1/16W 1-877-GOLDMOS 1522-PTF PDF

    BAS29

    Abstract: BAS31 BAS35 smd L21
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.


    Original     		OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21 PDF

    BAS29

    Abstract: BAS31 BAS35 l21 smd code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 1999 May 21 Philips Semiconductors Product specification General purpose controlled avalanche


    Original     		M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 l21 smd code PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.


    Original     		OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29â BAS31 PDF

    67144210

    Abstract: Schott 67144160 L37 smd Schott 67144110 schott 67144170 L33 SMD 67143920 67144250 smd L27 67144130
    Text: Thru Hole Devices LM259x/LM267x • • • • • • • Ideal for robust applications. Low EMI/Self shielded design. Wide operating temperature range. Low DCR for cool operation. Designed for low ripple. Stable inductance over varying loads. Recommended by National Semiconductor for use


    Original     		LM259x/LM267x LM259x LM267x 34SMD 67144210 Schott 67144160 L37 smd Schott 67144110 schott 67144170 L33 SMD 67143920 67144250 smd L27 67144130 PDF

    SMD CAPACITOR L29

    Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B


    Original     		BLV897 OT324B SCA55 127067/00/02/pp12 SMD CAPACITOR L29 Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322 PDF

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1 PDF

    Untitled

    Abstract: No abstract text available
    Text: UM10478 High-efficiency UBA3070 4-channel DC-to-DC LED driver demo board Rev. 2 — 24 May 2012 User manual Document information Info Content Keywords UBA3070, street, high bay lighting Abstract This document explains the operation and application of the UBA3070


    Original     		UM10478 UBA3070 UBA3070, UBA3070 PDF

    P1 SMD

    Abstract: c40 capacitor KL731JTE27NJ CC1010EB alps trimmer pinrow_2x5 SMD code l32 12n08 ALPS tx 433 AD8544
    Text: User Manual Rev. 2.01 CC1010DK Development Kit SWRU055 Table of contents INTRODUCTION . 3 EVALUATION MODULE. 4


    Original     		CC1010DK SWRU055 CC1010EM-433 P1 SMD c40 capacitor KL731JTE27NJ CC1010EB alps trimmer pinrow_2x5 SMD code l32 12n08 ALPS tx 433 AD8544 PDF

    c225 diode smd

    Abstract: SMD C236 DIODE SB950 Diode 1_b SMD diode C237 Crystek CVHD TSF153F c225 capacitor smd smd schottky diode c148 C241-C243
    Text: National Semiconductor RD-179 High Speed Signal Path Applications October 8, 2009 1.0 Design Description 2.0 Features The SP16160CH1RB demonstrates a high-IF sampling receiver subsystem that provides signal amplification, digitization and clocking as used in wireless infrastructure systems.


    Original     		RD-179 SP16160CH1RB ADC16DV160 LMH6517 LMK04031B CSP-9-111S2) CSP-9-111S2. c225 diode smd SMD C236 DIODE SB950 Diode 1_b SMD diode C237 Crystek CVHD TSF153F c225 capacitor smd smd schottky diode c148 C241-C243 PDF

    PLT06

    Abstract: No abstract text available
    Text: User's Guide SLAU344 – May 2011 ADS5263EVM Evaluation Module This user’s guide gives an overview of the ADS5263EVM and describes how the evaluation module can be used to evaluate the performance, functions, and features of the ADS5263 device. 1 2 3 4 5


    Original     		SLAU344 ADS5263EVM ADS5263 PLT06 PDF

    atmel 735 24c02 software

    Abstract: No abstract text available
    Text: SP16160CH1RB High-IF Receiver Reference Design Board LMH6517 + ADC16DV160 + LMK04031B User’s Guide 1.0 Reference Board Overview 2 2.0 Evaluation Kit Contents 4 3.0 System Description 4 4.0 Data Capture 5 5.0 Quick Start 5 6.0 Functional Description 7 7.0 System Performance


    Original     		SP16160CH1RB LMH6517 ADC16DV160 LMK04031B SP16160CH1RB 16DV160 atmel 735 24c02 software PDF

    lcmx01200c

    Abstract: smd m21 sot23 fuse smd marking f5 marking w25 SMD smd diode U12 c526 LCMXO1200C-CSBGA132 npn transistor smd w19 transistor C535 SMD BGA 672 DRAWING SPI-M2564
    Text:  LatticeECP2M PCI Express Solutions Board User’s Guide September 2008 Revision: EB33_01.0  LatticeECP2M PCI Express Solutions Board User’s Guide Lattice Semiconductor Introduction As PCI Express applications have emerged, the LatticeECP2M FPGA family has become a well-suited solution


    Original     		CY2304SC-1 CTS-CB3LV-3C100 00MHZ CB3LV-3C-100M0000-T EXB2HV471JV 33R-0603SMT ERJ-3EKF33R0V 1/16W 1M-0603SMT lcmx01200c smd m21 sot23 fuse smd marking f5 marking w25 SMD smd diode U12 c526 LCMXO1200C-CSBGA132 npn transistor smd w19 transistor C535 SMD BGA 672 DRAWING SPI-M2564 PDF

    Untitled

    Abstract: No abstract text available
    Text: L2 1 C 11 8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION □ Variable Length 8-bit Wide Shift Register □ Selectable Delay Length from 1 to 16 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/Raytheon TMC2111


    OCR Scan     		TMC2111 MIL-STD-883, 24-pin 28-pin L21C11 L21C11 L21C11PC25 L21C11PC20 PDF

    Alc201A

    Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
    Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		852GME Alc201A HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN PDF

    Atmel

    Abstract: ACT8865 ATMEL440 MT29F4G08ABA
    Text: Atmel | SMART SAMA5D4 Series SAMA5D4 Xplained Ultra Evaluation Kit USER GUIDE Introduction This user guide introduces the Atmel SAMA5D4 Xplained Ultra evaluation kit SAMA5D4-XULT and describes the development and debugging capabilities for applications running on the Atmel | SMART SAMA5D4 ARM® Cortex -A5-based


    Original     		PDF

    L21C11JC20

    Abstract: L21C11JC25 L21C11PC20 L21C11PC25 TMC2111 lo520
    Text: D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ Variable Length 8-bit Wide Shift Register □ Selectable Delay Length from 1 to 16 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2111 □ Load, Shift, and Hold Instructions □ Separate Data In and Data O ut Pins


    OCR Scan     		L21C11 TMC2111 MIL-STD-883, 24-pin 28-pin 24-pin 28-pin L21C11JC20 L21C11JC25 L21C11PC20 L21C11PC25 TMC2111 lo520 PDF

    D9KG

    Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
    Text: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		152-Ball MT46HxxxMxxLxCG 09005aef833913f1/Source: 09005aef833913d6 D9KG marking code micron label marking aa5 M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21 PDF