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    SMD HALL EFFECT TRANSISTOR Search Results

    SMD HALL EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD HALL EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 Pin SMD Hall sensors

    Abstract: MLX90215EVA-ND SMD Hall sensors linear D smd transistor 3l US1881LSETR-NDNEW US1881LSETR-ND US4881EUA-ND SMD Hall sensors linear US5881LUA SMD-540
    Text: NEW! Fig. Package Semiconductor Peak Wave- Bandwidth length nm (nm) Photo Current Standard Typ. (µA) Dimensions in mm Ambient Light Sensors View Angle (°) 1 0805 SMD 550 450 ~ 610 12 120 1206 SMD 540 430 ~ 610 0.04 120 2 1206 SMD 570 360 ~ 970 50 120 3


    Original     		PDF 751-1056-1-ND 751-1056-2-ND 751-1051-1-ND 751-1051-2-ND 751-1055-1-ND 751-1055-2-ND 751-1057-ND 751-1058-ND 751-1059-ND UA-92 4 Pin SMD Hall sensors MLX90215EVA-ND SMD Hall sensors linear D smd transistor 3l US1881LSETR-NDNEW US1881LSETR-ND US4881EUA-ND SMD Hall sensors linear US5881LUA SMD-540

    4976-1K

    Abstract: GPS09473 SC59
    Text: TLV4976-1K Value Optimized Hall Effect Switch with Current Interface for Industrial and Consumer Applications Data Sheet Rev. 1.0, 2010-08-02 Sense & Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF TLV4976-1K PG-SC59-3-5 4976-1K GPS09473 SC59

    TLE4976-2K

    Abstract: GPS09473 SC59
    Text: December 2008 TLE4976-2K Hall Effect Switch with Current Interface Data Sheet R e v. 1 . 0 Sense & Control Edition 2008-12-08 Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF TLE4976-2K TLE4976-2K GPS09473 SC59

    Untitled

    Abstract: No abstract text available
    Text: TLV4976-1K Value Optimized Hall Effect Switch with Current Interface for Industrial and Consumer Applications Data Sheet Rev. 1.0, 2010-08-02 Sense & Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF TLV4976-1K PG-SC59-3-5

    GPS09473

    Abstract: SC59 TLE4976-2K
    Text: TLE4976-2K Hall Effect Switch with Current Interface Data Sheet Rev. 1.2, 2010-08-05 Sense & Control Edition 2010-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4976-2K GPS09473 SC59 TLE4976-2K

    Untitled

    Abstract: No abstract text available
    Text: TLE4976-2K Hall Effect Switch with Current Interface Data Sheet Rev. 1.2, 2010-08-05 Sense & Control Edition 2010-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4976-2K

    Untitled

    Abstract: No abstract text available
    Text: TLV4976-2K Value Optimized Hall Effect Switch with Current Interface for Industrial and Consumer Applications Data Sheet Rev. 1.1, 2010-08-02 Sense & Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF TLV4976-2K PG-SC59-3-5

    Untitled

    Abstract: No abstract text available
    Text: TLV4946K, TLV4946-2K Value Optimized Hall Effect Latches for Industrial and Consumer Applications Datasheet Rev1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF TLV4946K, TLV4946-2K TLV4946K TLV4946-2K GPS09473 PG-SC59-3-5 PG-SC59-3-5

    Untitled

    Abstract: No abstract text available
    Text: TLV4946K, TLV4946-2K Value Optimized Hall Effect Latches for Industrial and Consumer Applications Datasheet Rev1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF TLV4946K, TLV4946-2K TLV4946K TLV4946-2K GPS09473 PG-SC59-3-5 PG-SC59-3-5

    PG-SC59

    Abstract: GPS09473 SC59 TRANSISTOR SMD CODE PACKAGE SC59
    Text: TLV4976-2K Value Optimized Hall Effect Switch with Current Interface for Industrial and Consumer Applications Data Sheet Rev. 1.1, 2010-08-02 Sense & Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF TLV4976-2K PG-SC59-3-5 PG-SC59 GPS09473 SC59 TRANSISTOR SMD CODE PACKAGE SC59

    Untitled

    Abstract: No abstract text available
    Text: TLE4976-2K Hall Effect Switch with Current Interface Data Sheet Rev. 1.2, 2010-08-05 Sense & Control Edition 2010-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4976-2K

    Untitled

    Abstract: No abstract text available
    Text: TLV4906K Value Optimized Hall Effect Switch for Industrial and Consumer Applications Datasheet Rev. 1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLV4906K AEA03244 TLV4906K GPS09473 PG-SC59-3-5 PG-SC59-3-5

    TLE4976-1K

    Abstract: infineon hall TRANSISTOR SMD MARKING CODE 1K AEA02510-1 GPO05358 GPS09473 SC59 TLE4976L
    Text: February 2009 TLE4976-1K / TLE4976L High Precision Hall Effect Switch with Current Interface Data Sheet R e v. 2 . 0 Sense & Control Edition 2009-02-12 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLE4976-1K TLE4976L property2009-02-12 TLE4976-1K AEA02510-1 TLE4976-1K, AEA03641 infineon hall TRANSISTOR SMD MARKING CODE 1K AEA02510-1 GPO05358 GPS09473 SC59 TLE4976L

    Hall sensor 45e

    Abstract: marking code A006 SMD Transistor smd transistor A006 SMD SOT23 7E
    Text: February 2009 TLE4976-1K / TLE4976L High Precision Hall Effect Switch with Current Interface Data Sheet R e v. 2 . 0 Sense & Control Edition 2009-02-12 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


    Original     		PDF TLE4976-1K TLE4976L TLE4976-1K AEA02510-1 TLE4976-1K, AEA03641 Hall sensor 45e marking code A006 SMD Transistor smd transistor A006 SMD SOT23 7E

    6 pin TRANSISTOR SMD CODE 21

    Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material


    Original     		PDF 21-Oct-03 CNY17F-2X017T 4N35-X016 BRT12H-X009T 6 pin TRANSISTOR SMD CODE 21 germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor

    Conventions used in Presenting Technical Data

    Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
    Text: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.


    Original     		PDF 10-Sep-07 Conventions used in Presenting Technical Data 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd

    TLE4961-1K

    Abstract: smd TRANSISTOR 12k TRANSISTOR SMD MARKING CODE H11 TLE4961-1 smd TRANSISTOR code marking PR
    Text: on ati Inf orm TLE4961-1K Pr el im ina ry High Precision Automotive Hall Effect Latch Technical Product Description Rev. 1.0, 2011-11-30 Sense & Control on ati Inf orm ry ina Edition 2011-11-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG


    Original     		PDF TLE4961-1K TLE4961-1K smd TRANSISTOR 12k TRANSISTOR SMD MARKING CODE H11 TLE4961-1 smd TRANSISTOR code marking PR

    TLE4964

    Abstract: automotive hall effect switch TLE4964-3K
    Text: on ati Inf orm TLE4964-3K Pr el im ina ry High Precision Automotive Hall Effect Switch Technical Product Description Rev. 1.0, 2011-11-30 Sense & Control on ati Inf orm ry ina Edition 2011-11-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG


    Original     		PDF TLE4964-3K TLE4964 automotive hall effect switch TLE4964-3K

    PG-SC59-3-5

    Abstract: smd TRANSISTOR code marking PR smd transistor 5k
    Text: on ati Inf orm TLE4961-5K Pr el im ina ry High Precision Automotive Hall Effect Latch Technical Product Description Rev. 1.0, 2011-11-30 Sense & Control on ati Inf orm ry ina Edition 2011-11-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG


    Original     		PDF TLE4961-5K TLE4961-5 PG-SC59-3-5 smd TRANSISTOR code marking PR smd transistor 5k

    A1171

    Abstract: A1171EEWLT-P AMS-702 IPC7351 MO-229
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ 1.65 to 3.5 V battery operation Low supply current High sensitivity, BOP typically 30 G 3.0 mT Operation with either north or south pole Configurable unipolar or omnipolar magnetic sensing


    Original     		PDF A1171 A1171 A1171EEWLT-P AMS-702 IPC7351 MO-229

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Description Features and Benefits 1.65 to 3.5 V battery operation Low supply current High sensitivity, BOP typically 30 G 3.0 mT Operation with either north or south pole Configurable unipolar or omnipolar magnetic sensing


    Original     		PDF A1171 A1171

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171

    smd transistor LY

    Abstract: siemens hall generator marking code ff p SMD Transistor
    Text: Integrated Hall-Effect Switch for Alternating Magnetic Reids TLE 4901 F TLE 4901 K Preliminary Data Type 0 TLE 4901 F T LE 4901 K Bipolar IC Ordering Code Package Q 6 70 0 0-A 2 5 18 Q 6 7 0 0 0 -A 2 3 9 9 Plastic flatpack M IKR O PACK SMD The Hall-effect IC TLE 4901 is a static contactless switch operated


    OCR Scan     		PDF