smd diode UM 07
Abstract: diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08
Text: Diodes SMD Type Silicon RF Switching Diode BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter
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BAR65-07
smd diode UM 07
diode
IR switch
SILICON SWITCHING DIODE
BAR65-07
smd rf transistor marking
pindiode switch
smd diode UM 09
smd diode UM 08
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smd JS
Abstract: smd transistor js smd diode marking ja smd diode JS diode DIODE 630 DIODE JS diode marking ja DIODE SMD 55 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100
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BAT62-07W
OT-343
smd JS
smd transistor js
smd diode marking ja
smd diode JS
diode
DIODE 630
DIODE JS
diode marking ja
DIODE SMD 55
ja smd
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV99S High-speed switching diode array Preliminary specification 2001 Jan 08 Philips Semiconductors Preliminary specification High-speed switching diode array BAV99S PINNING FEATURES • Small plastic SMD package
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MBD128
BAV99S
125004/04/pp9
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marking code k1
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV99S High-speed switching diode array Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification High-speed switching diode array BAV99S PINNING FEATURES • Small plastic SMD package
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MBD128
BAV99S
125004/04/pp9
marking code k1
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smd diode marking 47s
Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Text: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage
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BAS40-07W
OT-343
smd diode marking 47s
transistor marking 47s
smd diode marking 1P
smd marking 47s
diode
K 345
Schottky Diode
smd rf transistor marking
BAS40-07W
diode 345
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smd diode marking Av
Abstract: 54s diode BAT17-05W "BAT17" marking 1AV BAT17-04W BAT17-06W BAT17-04 1AV marking
Text: Diodes SMD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Sym bol Value Unit VR 4 V IF 130
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BAT17-04W
BAT17-05W
BAT17-06W
smd diode marking Av
54s diode
"BAT17"
marking 1AV
BAT17-06W
BAT17-04
1AV marking
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318 MARKING DIODE
Abstract: smd rf transistor marking BAT68-04W BAT68-05W BAT68-06W bat68
Text: Diodes SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current
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BAT68-04W
BAT68-05W
BAT68-06W
BAT68-04W
BAT68-05W
318 MARKING DIODE
smd rf transistor marking
BAT68-06W
bat68
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smd JS
Abstract: smd diode marking ja diode js smd transistor js 650 DIODE k 650 smd diode JS smd diode nh BAT62 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature
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BAT62
smd JS
smd diode marking ja
diode js
smd transistor js
650 DIODE
k 650
smd diode JS
smd diode nh
BAT62
ja smd
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BAS116
Abstract: Philips smd code marking sot23
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS116 Low-leakage diode Product specification Supersedes data of 1999 May 26 2003 Dec 12 Philips Semiconductors Product specification Low-leakage diode BAS116 FEATURES PINNING • Plastic SMD package
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M3D088
BAS116
MAM106
SCA75
R76/04/pp8
BAS116
Philips smd code marking sot23
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB190 UHF variable capacitance diode Product specification 2000 Nov 07 Philips Semiconductors Product specification UHF variable capacitance diode BB190 FEATURES • Excellent linearity • Very small plastic SMD package
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M3D049
BB190
MAM130
OD323)
BB190
OD323
613512/01/pp8
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ba278
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V
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M3D739
BA278
MBK258
MAM399
ba278
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BAS116
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS116 Low-leakage diode Product specification Supersedes data of 1996 Mar 13 1999 May 26 Philips Semiconductors Product specification Low-leakage diode BAS116 PINNING FEATURES • Plastic SMD package
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M3D088
BAS116
MAM106
115002/03/pp8
BAS116
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diode smd ED 68
Abstract: diode smd ED 74 diode smd ED 84 sc793 BA278 BP317 diode smd marking ed diode ED 84 smd 816
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V
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M3D739
BA278
MBK258
MAM399
diode smd ED 68
diode smd ED 74
diode smd ED 84
sc793
BA278
BP317
diode smd marking ed
diode ED 84
smd 816
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CHE1270
Abstract: CHE1270-QAG MO-220 AN0017
Text: CHE1270-QAG RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1270 YYWW The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
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CHE1270-QAG
10-44GHz
E1270
CHE1270-QAG
CHE1270
10GHz
12GHz
17GHz
27GHz
32GHz
CHE1270
MO-220
AN0017
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MR1020
Abstract: I2C00 marking JB SCHOTTKY BARRIER DIODE MARKING FY DF25SC6M marking JB diode SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF25SC6M o u tlin e 60V 25A Feature • SMD • SMD • PRRSM • P rrsm Rating • /jv s fc fc œ s s » • High lo Rating-Small-RKG Main Use • • • • Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation
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DF25SC6M
STO-220
I-111,
J532-1)
MR1020
I2C00
marking JB SCHOTTKY BARRIER DIODE
MARKING FY
DF25SC6M
marking JB diode
SHINDENGEN DIODE
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20L60U
Abstract: SMD MARKING JP F20L60U smd diode marking JC 20L60 SMD MARKING JE smd diode UM smd diode UM 35 SMD DIODE BOOK
Text: Super Fast Recovery Diode Single Diode mfm OUTLINE Package : STO-220 DF20L60U U '^ à L Ì°- M Unit-mm Weight 1.5g (TypJ 10.2 600V 20A Feature • SMD • SMD • trr=35ns • trr=35ns • Low Noise 4.7 Main Use >X 1Switching Regulator ' f ' y 1 PFC(Power Factor Correction)
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STO-220
DF20L60U
20L60U
SMD MARKING JP
F20L60U
smd diode marking JC
20L60
SMD MARKING JE
smd diode UM
smd diode UM 35
SMD DIODE BOOK
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SMD 1Ft
Abstract: DF10L60 TRR50NS smd marking KM diode marking NZ
Text: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF10L60 600V 10A Feature • SMD • SMD • High Voltage • trr-50ns • trr-5 0 n s • PFC • PFC Pow er Factor Correction Main Use • Switching Regulator •mm,OA • Fly Wheel • FA • Factory Autom ation
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OCR Scan
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PDF
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DF10L60
trr-50ns
STO-220
J532-1)
SMD 1Ft
DF10L60
TRR50NS
smd marking KM
diode marking NZ
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Diode SMD SJ 02
Abstract: *f10sc9 10sc9 Diode SMD SJ 05 Diode type SMD marking SJ Diode SMD SJ MARKING JM DF10SC9 Diode SMD SJ 01 Diode SMD SJ 11
Text: Schottky Barrier Diode Twin Diode mnm DF10SC9 o u tlin e 90 V 10A Feature • SMD • SMD • PRRSM • P rrsm Rating • /jv s fc fc œ s s » • High lo Rating-Small-RKG Main Use • DC/DC •mm.y-h.OAmss • iBiS.iK—S 'y USSSb • • • • Switching Regulator
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OCR Scan
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PDF
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DF10SC9
STO-220
10SC9
Diode SMD SJ 02
*f10sc9
10sc9
Diode SMD SJ 05
Diode type SMD marking SJ
Diode SMD SJ
MARKING JM
DF10SC9
Diode SMD SJ 01
Diode SMD SJ 11
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smd diode marking FG
Abstract: f15jc10
Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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OCR Scan
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PDF
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STO-220
smd diode marking FG
f15jc10
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GC smd diode
Abstract: IOA10 smd marking gc diode
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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OCR Scan
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PDF
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STO-220
DF30JC4
tec40
GC smd diode
IOA10
smd marking gc diode
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DIODE marking VU
Abstract: DF15JC10 STO-220 Shindengen smd diode VU SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode m n m o u tlin e DF15J C 10 100 V 15A Feature • SMD • • • • • I r = 0 . 6 it i A • jw is æ ç ë c u ic < L ' • /Jvä!*«3iig * SMD Low lR=0.6mA Resistance for thermal run-away High lo Rating -Small-PKG
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OCR Scan
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PDF
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DF15JC10
STO-220
DIODE marking VU
DF15JC10
STO-220 Shindengen
smd diode VU
SHINDENGEN DIODE
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x25-m
Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse
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OCR Scan
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150lC
x25-m
MARKING H140
diode b tu 25 c
JB SMD MARKING
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j532
Abstract: C3B56 DF10LC30 STO-220
Text: Super Fast Recovery Diode Twin Diode mtmm DF10LC30 o u t lin e 300V 10A Feature • SMD • e y -rx • SMD • Low Noise • trr-30ns • trr-30ns Main Use • DC/DC D y / K - Ï • S a .O A .B B W • fflte.FA • PDP • Switching Regulator • DC/DC Converter
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OCR Scan
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PDF
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DF10LC30
trr-30ns
STO-220
J532-1}
C3B56
J532-1)
j532
DF10LC30
STO-220
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtmm o u t lin e Package ! E-pack DE5L60 U n ii Im m 600V 5A Feature • SMD • High Voltage • trr=50ns SMD ia U E E trr=50ns • • • • • PFC - \s wm.OA FA I 51l 6 Dill*rtidi M a in U se PFC(Power Factor Correction)
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OCR Scan
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PDF
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DE5L60
J532-1
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