smd diode code g3
Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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160-0055X1
160-0055X1-BL
160-0055X1-SL
160-0055X1-SMD
160-0055X1
smd diode code g3
smd diode code g4
smd diode g6 DIODE S4 39 smd diode
smd diode S4
smd diode code mj
smd diode S6
DIODE marking S4 45
SMD S6 55 A
smd diode code SL
SMD diode MARKING CODE g6
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20070906d
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DIODE S4 66
Abstract: smd diode g6 DIODE S4 39 smd diode Diode smd s6 46 SMD MARKING CODE s4 smd diode S6 smd diode code g4 160-0055X1 DIODE marking S4 45 smd diode code g3 marking s4 resistor
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20081126g
DIODE S4 66
smd diode g6 DIODE S4 39 smd diode
Diode smd s6 46
SMD MARKING CODE s4
smd diode S6
smd diode code g4
160-0055X1
DIODE marking S4 45
smd diode code g3
marking s4 resistor
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20080527f
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smd diode code SL
Abstract: smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20070809c
smd diode code SL
smd diode code g3
smd diode .S6 22
smd diode S2
Marking Code KEY
smd diode g5
SMD mosfet MARKING code TJ
smd code marking SL
S6 39 diode
DIODE S4 39
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20110307i
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smd diode code SL
Abstract: SMD mosfet MARKING code TJ SMD MARKING QG 6 PIN DIODE marking S4 06 200909 smd diode code g3 smd diode g6 160-0055X1 SMD MARKING g5 SMD mosfet MARKING code TC
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20090930h
smd diode code SL
SMD mosfet MARKING code TJ
SMD MARKING QG 6 PIN
DIODE marking S4 06
200909
smd diode code g3
smd diode g6
160-0055X1
SMD MARKING g5
SMD mosfet MARKING code TC
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
Symbol1000
20110307i
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120W55GA
Abstract: 120W55GC smd diode code g6 9
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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160-0055X1
20110307i
120W55GA
120W55GC
smd diode code g6 9
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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LR26550
Abstract: No abstract text available
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
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E43149;
LR26550
LR26550
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latching relay
Abstract: 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
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E43149;
LR26550
latching relay
12v dc relay 8 pin
12V RELAY PIN DIAGRAM
5 pin relay 12v
5 V DC RELAY
ac relay
Matsushita polarized relay 7 pin
RELAY 1500 V LR26550
TF224
8 pin SMD relay
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relay 5 pin 12v
Abstract: 8 pin SMD relay RELAY 1500 V LR26550 double coil latching relays relay 48v dc relay 12v dc 12v relay datasheet 5 pin relay 12v 5 V DC RELAY THE SLIM POWER RELAY 12 v relay
Text: TN ULTRA-SLIM POLARIZED RELAY UL File No.: E43149 CSA File No.: LR26550 5.6 .220 14 .551 TN-RELAYS 9.8 .386 mm inch • Ultra-slim size for minimal PC board mounting requirements • Small header area makes higher density mounting possible • High sensitivity: 140 mW nominal operating power single side stable 3-12 V type
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E43149
LR26550
relay 5 pin 12v
8 pin SMD relay
RELAY 1500 V LR26550
double coil latching relays relay 48v dc
relay 12v dc
12v relay datasheet
5 pin relay 12v
5 V DC RELAY
THE SLIM POWER RELAY
12 v relay
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LR26550
Abstract: TN2-12 TN2-24 TN2-48 double coil latching relays smd V4836 RELAY 1500 V LR26550 smd 2.TN
Text: TN ULTRA-SLIM POLARIZED RELAY UL File No.: E43149 CSA File No.: LR26550 5.6 .220 14 .551 TN-RELAYS 9.8 .386 mm inch • Ultra-slim size for minimal PC board mounting requirements • Small header area makes higher density mounting possible • High sensitivity: 140 mW nominal operating power single side stable 3-12 V type
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E43149
LR26550
LR26550
TN2-12
TN2-24
TN2-48
double coil latching relays smd
V4836
RELAY 1500 V LR26550
smd 2.TN
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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smd diode S6
Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20081126f
smd diode S6
smd diode S4
S4 DIODE
SMD MARKING g5
smd diode g5
smd diode g6
Diode S4
g1 smd diode
S3 marking DIODE
SMD MARKING s6
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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smd diode S4
Abstract: No abstract text available
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
100-01X1-SMD
220-004P3
20070906c
smd diode S4
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smd diode S4
Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
diod007
20070628b
220-004P3-SL
220-04P3-BL
220-004P3
smd diode S4
smd diode code g3
SMD MARKING CODE 503 K
smd diode S6
S4 DIODE
S6 diode
smd diode marking code L2
SMD MARKING g3
smd diode code s6
SMD MARKING g5
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smd diode g6
Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20080527e
smd diode g6
smd S4 36
SMD diode MARKING CODE g6
smd g5
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Matsushita TQ2-l2-12v
Abstract: TQ2-12V Matsushita TQ2 TQ2-12 TQ2-12V-3 TQ2-24 tq2-l2-12v DIODE SMD m14 TQ2 RELAY
Text: TESTING LOW PROFILE 2 FORM C RELAY TQ-RELAYS FEATURES 9 .354 26.7 1.051 5+0.4 –0.2 .197+.016 –.008 9 .354 14 .551 5+0.4 –0.2 .197+.016 –.008 • High sensitivity: 2 Form C: 140 mW power consumption single side stable type 4 Form C: 280 mW power consumption (single side stable type)
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MTI120WX55GD
Abstract: s4 35 diode marking code
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
MTI120WX55GD
s4 35 diode marking code
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smd transistor g1
Abstract: g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104
Text: www.fairchildsemi.com FEB219-001 User’s Guide FPP06R001 Evaluation Board Featured Fairchild Product: FPP06R001 www.fairchildsemi.com/FEBsupport 2008 Fairchild Semiconductor Corporation 1 FEBxxx_ FPP06R001 • Rev. 0.0.1 www.fairchildsemi.com Table of Contents
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FEB219-001
FPP06R001
smd transistor g1
g1 smd transistor
smd transistor 3K
resistor smd 103
D4001BC
OPTOCOUPLER SMPS
smd transistor S1
SMD resistors 2012
Zener diode 18V SOD80
transistor SMD 104
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Transistor smd 338
Abstract: TQ2S-24 TQ2S-L2-24 double coil latching relays smd TQ2SA-12V TQ2S-48 TQ2S-L2-12
Text: TQ SMD TESTING LOW-PROFILE SURFACE-MOUNT RELAY TQ SMD RELAYS FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
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