Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm D3FS4A O UTLINE Unit-mm Weight 0.16g Typ Package : 2F iJV - F v - ^ thode m ark 40V 2.6A Feature • /J v P S M D • Small SMD • Tj=150°C • < S V f = 0 .4 5 V • Tj=150°C • Low V f = 0 . 4 5 V :ffiïiE
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smd diode marking zf
Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •
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DF10SC4M
11-PKG
STO-220
J532-1)
smd diode marking zf
DF10SC4M
smd diode marking c
MTKM
Diode 1_b SMD
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smd marking code fj
Abstract: smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10P3 U nit: mm r Weight 0.326g Typ 30 V 10 A i 2 4 Feature 6.6 • SMD • SMD • Î S ® V f=0.4V • Ultra-Low V f=0.4V • Reverse connect protection for DC power source • DC O R-output
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DE10P3
32fig
50HzX'
smd marking code fj
smd marking 5R
marking code H1 SMD
SMD MARKING CODE vk
smd diode code H1
marking code fj SMD
diode raa marking code
SMD DIODE BOOK
smd diode code marking RA
smd code marking LP
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x25-m
Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse
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150lC
x25-m
MARKING H140
diode b tu 25 c
JB SMD MARKING
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smd marking KM
Abstract: JH MARKING CODE SCHOTTKY DIODE
Text: Schottky Barrier Diode Single Diode DG1M3A Unit-mm Weight 0.011 g Typ Package : G1F 30V 1.5A Feature • i s i l s y = 0 .8 m m Ultra-small SMD Ultla-thin PKG=0.8mm •< S V f= 0 .4 6 V Low Vf=0.46V • 1 5 I r = 0 .0 5 m A Low lR =0.05m A • If s m = 3 0 A
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160mm'
160mnf)
50IIz
smd marking KM
JH MARKING CODE SCHOTTKY DIODE
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Untitled
Abstract: No abstract text available
Text: /j'SäüSHn Power zener Diode r / u z mw Small Surface Mount Device Single Zener Diode • ftM U ! OUTLINE Package : 1 F S T 0 4 -1 6 F 1 uniumm Weight 0.058 g 16V 400W ftft ■ ■ /J\SSIVD Feature ■ 1W Class ■ Small SMD ■ Available for automotive use
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ST04-16F1
waveii50HzTiiJ
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SMD M1B diode
Abstract: SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode M3FL20U U nit-m m W eight 0.072g Typ Package : M2F Jj V—Y-?—? 200V 3A Feature • /J v P S M D • Small SMD • ß y -rx • trr= 3 5 n s • Low Noise G> \4 • trr=35ns • Low V f=0.95V • <SV f=0.95V
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M3FL20U
i50Hz
SMD M1B diode
SMD M1B
sr smd diode
smd marking KM
m1b marking
smd diode A4
J532
M3FL20U
smd diode sr
SMD marking "SR"
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zener smd diode 16v 1w
Abstract: TL251 zener smd marking TK zener smd diode 1w U180 SMD marking 8M zener ST04-16F1 zener 6v diode diode 200 1w smd zener diode 6v
Text: /j'SäüSHn r / u z mw Power zener Diode Small Surface Mount Device Single Zener Diode • ftM U ! OUTLINE S T 0 4 - 1 6 F 1 16V 400W ftft ■ ■ /J\SSIVD Feature ■ 1W Class ■ Small SMD ■ Available for automotive use v 'T rw ssr ¿5v £ ffi& E P ttfilSr
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ST04-16F1
25t/unless
251C/unless
wavefi50HzT-ffl
zener smd diode 16v 1w
TL251
zener smd marking TK
zener smd diode 1w
U180
SMD marking 8M zener
ST04-16F1
zener 6v diode
diode 200 1w
smd zener diode 6v
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE L 4 .0 S S MrafoBSTL . FEATURES o |SQUARE-PAK1 TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T-QH oTabless TO-220 : C10T-QH-11A oDual Diodes—Cathode Common OLow Forward Voltage Drop o High Surge Capability OTj=150°C operation
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O-263AB
C10T-QH
O-220
C10T-QH-11A
C10T04QH
C10T04QH-11A
0A/40
-0T04QH
bbl5123
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l
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Untitled
Abstract: No abstract text available
Text: MINI-MELF-SMD o Applications Silicon Diode L L 4 1 5 0 1 N r 5 0 U 4 1 R Switching - 1 I D Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXZTXV and S level per
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MIL-S-19500/437
LL-34/35
DO-213AA)
DO-35
Mil-S-19
4031-B
1N4150UR-1
DO-213AA
1N4150)
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SHINDENGEN DIODE
Abstract: DF20PC3M
Text: y 3 y h Surface Mounting Device 'K / i Twin Diode A U T $ -f # — K Schottky Barrier Diode Ifltë ît& IZ DF20PC3M O U T L IN E D IM E N S IO N S Case : S T O -2 20 I 4.1 V 1- N - IJ- 30V 20A 2.4 i0 0.1 • SMD •ÎSIÊVr = 0 .4 V rn • A y x U -i2fg|ifilh
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DF20PC3M
SHINDENGEN DIODE
DF20PC3M
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r
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J53Z-1)
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20113
Abstract: Diode 20A/30v C20T03QL C20T03QL-11A S251 23S-I 10417 QL-11A
Text: SCHOTTKY BARRIER DIODE C20T03QL C20T03QL-UA 2 0 A /3 0 V 4.8UB9 ,. 4Ì4Ì.173) . I0.4i.409) r m m jy s) FE A T U R E S , 10.61417) I Ô.0.378) 10.K.398) I 8.5 .335)l o | SQUARE-PAK | TO-263AB (SMD) Packaged in 24mm T ape and Reel ; C 2 0 T -Q L •*-
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0A/30V
C20T03QL
C20T03QL-UA
O-263AB
C20T-QL
O-220
QL-11A
C20T03QL-11A
20113
Diode 20A/30v
C20T03QL-11A
S251
23S-I
10417
QL-11A
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DF40PC3
Abstract: J532 SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF40PC3 o u t lin e 30V 40A F e a tu re • SMD • î • SM D 3 V f = 0 .4 V • U ltra-Low V f=0.4V • High lo R ating-Sm all-R K G M a in U s e • /w x u -æ s B m t • Reverse connect protection for DC pow er source
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DF40PC3
STO-220
I-111,
J532-1
DF40PC3
J532
SHINDENGEN DIODE
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diode marking A43
Abstract: No abstract text available
Text: c o A tc m r SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDFR S e r i e s R o H s Device Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 1 0 0 5 (2 5 1 2 ) High c o m p o n e n td e n s ity . 0 .1 0 2 (2 .6 0 ) 0 .0 9 5 (2 .4 0 )
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MIL-STD-750
CPDFR12V:
CPDFR24V:
CPDFR36V:
CPDFR12V
CPDFR24V
CPDFR36V
diode marking A43
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 1 7 .7 A / 3 0 0 ~ 4 0 0 V / tr r :4 5 n s e c C16T30f ° ¡SQUARE - PAK TO-263AB SMD Packaged in 24mm Tape and Reel : C16T» »F » Tabless T0-220:C16T40F-11A ° Dual Diodes — Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop
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C16T30f
O-263AB
T0-220
C16T40F-11A
C16T30F
C16T40F
16very
C16T3
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NA03HSA08
Abstract: NA03HSA065 NA03HSA12 marking AAW HAB8 mta soldering
Text: 3A 80V Tjw150 C ^C 1 /3 /. 3r—.siJJ F S ch o ttk y B a rrier D iode SMD TypB t t 4 3 *^* Nihon Inter Electronics Corporation Specification m ->3 7 ^ ^r—z-N u T V 4 Construction Schottky barrier diode Application High frequency rectification K MAXIMUM RATINGS Ta=25°C : unless otherwise specified
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Tjw150V
NA03HSA08
50HzjE3Â
NA03HSA08
NA03HSA065
NA03HSA12
UL94VH3
Snl00%
NA03HSA065
NA03HSA12
marking AAW
HAB8
mta soldering
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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D1FL40
D1FL40
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SMD DIODE A43 data
Abstract: diode LR smd CDBFR0145
Text: c o A tc m r SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBFR01 4 5 R°H s Device lo = 100 mA V r = 45 Volts Features 1 0 0 5 (2 5 1 2 ) D e s i g n e d f o r m o u n t i n g on s m a l l s u r f a c e . 0 .1 0 2 (2 .6 0 ) 0 .0 9 5 (2 .4 0 )
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CDBFR0145
MIL-STD-750
QW-A1063
CDBFR0145)
SMD DIODE A43 data
diode LR smd
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10SC4
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM
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DE10SC4
326tf
10SC4
or10ms
J532-1)
10SC4
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JJ SMD diode
Abstract: smd diode marking JJ smd diode JJ DIODE marking VU smd marking KM DE10S3L J532 smd diode HB smd diode marking ex TC124T
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10S3L U n it: m m r W eigh t 0.326g T y p 30 V 10 A i 2 4 Feature 6.6 • SMD • Tj'=150t; • Tj= 150°C • ® V f =0.45V • L o w V f = 0.45V • P R R S M p y ^ V Î/X ÎS II • P r r s m R atin g
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DE10S3L
32fig
JJ SMD diode
smd diode marking JJ
smd diode JJ
DIODE marking VU
smd marking KM
DE10S3L
J532
smd diode HB
smd diode marking ex
TC124T
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SMD zener diode 7.5 b
Abstract: smd diode Lz zener smd zener diode code 24 smd code z16 Diode zener smd 152 Zener diode smd marking 22 Zener diode smd marking code 25c zener 7.5 B 39 SMD SMD zener diode 202 smd zener code 22
Text: coAtcm r SMD Zener Diode S M D D io d e s S p e c ia lis t CZRA4728-G Thru CZRA4753-G Voltage: 3.3 to 36 Volts Power: 1.0 Watts RoHS Device Features SMA -F o rs u rfa c e m ounted a p p lic a tio n s . - 1 .0W P ow e r D is s ip a tio n . ^ _0 .1 8 & 4 .8 _ ^
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CZRA4728-G
CZRA4753-G
3to36Volts
MIL-STD-202
05gram
QW-BZ004
SMD zener diode 7.5 b
smd diode Lz zener
smd zener diode code 24
smd code z16
Diode zener smd 152
Zener diode smd marking 22
Zener diode smd marking code 25c
zener 7.5 B 39 SMD
SMD zener diode 202
smd zener code 22
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7U46
Abstract: t0 ca smd C16T30F C16T40F C16T40F-11A
Text: FAST RECOVERY DIODE 17.7A/300~ 400V/trr :4 5 n s « C16T30F C16T40F C16T40F-11A o ISQUARE - PAK TO-263AB SMD Packaged in 24mm Tape and Reel : C16T*«F o Tabless T0-220:C16T40F-11A Dual Diodes — Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop
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00V/trr
45nsec
C16T30F
C16T40F
C16T40F-11A
O-263AB
T0-220
33K555P
0C157)
7U46
t0 ca smd
C16T40F
C16T40F-11A
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