Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of
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CDA8S03G
10Volts
OT-23)
MDS0903007A
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Untitled
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor COMCHIP SMD DIODE SPECIALIST CDA4S14G RoHS Device Voltage: 13 Volts Current: 50 mA Package (SOT-143) Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal
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CDA4S14G
OT-143)
MDS0903003A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and
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CDA6N08G
MDS0903005A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08-G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designedto provide six channels for active termination of high-speed data signals to eliminate signal undershootand
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CDA6N08-G
MDS0903005A
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A82 SMD
Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V
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TWT4148S-221F5
TWT4148A-120F5
TWT4148C-121F5
TWT4148S-221WT
TWT4148A-120WT
TWT4148C-121WT
A82 SMD
marking code jg SMD diode
smd diode marking jg
smd diode A82
marking code JG SMD
d1875
smd A82
smd code A82
BAV70-184
smd diode code F3
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smd diode A82
Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V
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TWT4148S-221F5
TWT4148A-120F5
TWT4148C-121F5
TWT4148S-221WT
TWT4148A-120WT
TWT4148C-121WT
smd diode A82
smd diode marking A3
smd code A82
DIODE smd marking A3
marking code JG SMD
TWT4148A-120F5
diode SMD MARKING CODE A6
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smd code marking 777
Abstract: BB155 SMD MARKING CODE 1C marking code pe
Text: Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance -n - • Very small plastic SMD package. APPLICATIONS Marking code: PE. • Voltage controlled oscillators
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OCR Scan
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BB155
BB155
OD323
OD323)
711002b
smd code marking 777
SMD MARKING CODE 1C
marking code pe
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8M SMD
Abstract: BAS116
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
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BAS116
OT-23
C-120
BAS116
Rev140505E
8M SMD
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BAS116
Abstract: MARKING JS sot-23 smd marking NC package sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
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BAS116
OT-23
C-120
BAS116
Rev140505E
MARKING JS sot-23
smd marking NC package sot23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
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BAS116
OT-23
C-120
BAS116
Rev140505E
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ZENER DIODE marking l2
Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.
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1N5221B-G
1N5267B-G
-500mW
DO-35
DO-35
MIL-STD-750
13gram
QW-BZ001
1N5221-G
ZENER DIODE marking l2
zener voltage for diode 1N5231B
smd diode marking code g
SMD ZENER DIODE MARKING CODE G
SMD zener marking code 102
SILICON PLANAR zener diode DO-35
1N5222B SMD diode
Zener diode smd marking code 24
1N5239B SMD
1N5227B
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1N50xx
Abstract: SMD zener marking code 102
Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.
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1N5221B-G
1N5267B-G
DO-35
-500mW
MIL-STD-750
13gram
QW-BZ001
1N5221-G
1N50xx
SMD zener marking code 102
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SMD DIODE 512
Abstract: smd sot23 marking l6 SMD MARKING CODE L6 smd schottky diode marking BP
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT720 Schottky barrier diode Product specification Supersedes data of 1999 May 26 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier diode FEATURES BAT720 PINNING • Ultra high switching speed
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M3D088
BAT720
BAT720
13-Feb-03)
SMD DIODE 512
smd sot23 marking l6
SMD MARKING CODE L6
smd schottky diode marking BP
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Untitled
Abstract: No abstract text available
Text: Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device TO-263/D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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CDBD8060-G
CDBD8100-G
O-263/D2PAK
18Voltage
QW-BB047
CDBD8060-G
SD8L60
SD8L100
O-263
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diode NXP marking code N1
Abstract: No abstract text available
Text: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.
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BB174LX
BB174LX
OD882D
DFN1006D-2)
sym008
diode NXP marking code N1
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z12 smd code sot23
Abstract: SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 18 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation:
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M3D088
BZX84
BZX84-A)
BZX84-B)
BZX84-C)
BZX84-C11
BZX84-C12
BZX84-C13
BZX84-C6V8
BZX84-C15
z12 smd code sot23
SMD MARKING code 613 sot23
smd code Z70
SMD marking Z4
SMD MARKING CODE Z2
smd code z16
Y11 smd code
smd z17
z67 smd
marking Z58
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A08K
Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4
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KO3416
OT-23-3
A08K
a08k transistor
SMD TRANSISTOR mosfet marking pd
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BAP51-06W
Abstract: Diode smd w7 diode s4 53 smd diode marking 111 BAP51
Text: BAP51-06W General purpose PIN diode Rev. 01 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package. 1.2 Features • Two elements in common anode configuration in a small SMD plastic package
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BAP51-06W
OT323
mgu320
BAP51-06W
Diode smd w7
diode s4 53
smd diode marking 111
BAP51
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DIODE smd marking pl
Abstract: UHF variable capacitance diode SC76 SC-76 smd DIODE code marking Q
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BB149A/TM UHF variable capacitance diode Product specification 2002 Mar 26 Philips Semiconductors Product specification UHF variable capacitance diode BB149A/TM FEATURES PINNING • High linearity PIN
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M3D049
BB149A/TM
BB149A/TM
OD323
SC-76)
SCA74
613514/01/pp8
DIODE smd marking pl
UHF variable capacitance diode
SC76
SC-76
smd DIODE code marking Q
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cdbhd2100-g
Abstract: B 220G MDS210 CDBHD240-G TO-269AA CDBHD220-G TO269AA mds26 mds24 marking 691
Text: COMCHIP Low VF SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBHD220-G Thru. CDBHD2100-G Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Features TO-269AA Schottky barrier chips in TO-269AA bridge. Metal semiconductor junction with guard ring.
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CDBHD220-G
CDBHD2100-G
O-269AA
O-269AA
E321971
O-269A4
QW-BL011
CDBHD220-G
MDS22
CDBHD240-G
cdbhd2100-g
B 220G
MDS210
CDBHD240-G
TO-269AA
TO269AA
mds26
mds24
marking 691
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PDF
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PH 17G
Abstract: PH marking code str 40115 ph-17j PH17G st smd diode marking code DE ph-17g marking code PH 817 marking 122 PHILIPS ph-17m
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD17 series General purpose controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 26 1999 Nov 11 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers
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M3D121
BYD17
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\0818200.
\BYD17J
PH 17G
PH marking code
str 40115
ph-17j
PH17G
st smd diode marking code DE
ph-17g
marking code PH 817
marking 122 PHILIPS
ph-17m
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TO-269AA
Abstract: MDS210 smd DIODE code marking 20A TO269AA CDBHD2100-G
Text: COMCHIP Low VF SMD Schottky Bridge Rectifiers SMD Diodes Specialist ~ S MDXX X CDBHD220-G Thru. CDBHD2100-G + Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device ~ - Features TO-269AA Schottky barrier chips in TO-269AA bridge. Metal semiconductor junction with guard ring.
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CDBHD220-G
CDBHD2100-G
O-269AA
E321971
O-269AA
O-269AA,
CDBHD240-G
CDBHD260-G
CDBHD280-G
TO-269AA
MDS210
smd DIODE code marking 20A
TO269AA
CDBHD2100-G
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PDF
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SMD diode MARKING P2
Abstract: BB132 diode marking P2 BB132 diode CD smd diode
Text: LESHAN RADIO COMPANY, LTD. VHF Variable Capacitance Diode BB132 1 FEATURES • High linearity · Excellent matching to 1% DMA · Very small plastic SMD package · C28: 2.5 pF; ratio: 26. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz
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BB132
BB132
OD323
SMD diode MARKING P2
diode marking P2
BB132 diode
CD smd diode
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS V = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1
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KO3403
OT-23
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