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    SMD DIODE JC 7 Search Results

    SMD DIODE JC 7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE JC 7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd diode marking JC

    Abstract: marking JC diode smd diode JC smd marking T1 marking JTp JC SMD marking JC BAL74W JTp smd JC SMD DIODE
    Text: Diodes SMD Type High-speed diode BAL74W Features Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Continuous reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25


    Original     		BAL74W smd diode marking JC marking JC diode smd diode JC smd marking T1 marking JTp JC SMD marking JC BAL74W JTp smd JC SMD DIODE PDF

    KO3402

    Abstract: equivalent smd mosfet N-CHANNEL MOSFET 30V 2A SOT-23 DIODE smd 434 smd 4A data smd diode JC smd transistor ja AO3402 mosfet vgs 5v iGSS 80 nA Vgs 0v
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3402 AO3402 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 RDS(ON) 0.55 ID = 4 A


    Original     		KO3402 AO3402) OT-23 equivalent smd mosfet N-CHANNEL MOSFET 30V 2A SOT-23 DIODE smd 434 smd 4A data smd diode JC smd transistor ja AO3402 mosfet vgs 5v iGSS 80 nA Vgs 0v PDF

    smd transistor 2A

    Abstract: SMD Transistor nc
    Text: Transistors IC SMD Type 300V N-Channel MOSFET KQB3N30 TO-263 3.2A, 300 V. RDS ON = 2.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2


    Original     		KQB3N30 O-263 smd transistor 2A SMD Transistor nc PDF

    diode ja

    Abstract: smd transistor nc 61 78 DIODE SMD SMD Transistor nc KQB630
    Text: Transistors IC SMD Type 200V N-Channel MOSFET KQB630 TO-263 9A, 200 V. RDS ON = 0.4 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 19nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1


    Original     		KQB630 O-263 Curr60 diode ja smd transistor nc 61 78 DIODE SMD SMD Transistor nc KQB630 PDF

    SMD Transistor nc

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 500V N-Channel MOSFET KQB4N50 1 .2 7 -0+ 0.1.1 TO-263 Features 3.4A, 500 V. RDS ON = 2.7 @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 100% avalanche tested lmproved dv/dt capability 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1


    Original     		KQB4N50 O-263 SMD Transistor nc PDF

    smd transistor 2A

    Abstract: SMD Transistor nc
    Text: Transistors IC SMD Type 600V N-Channel MOSFET KQB2N60 TO-263 2.4A, 600 V. RDS ON = 4.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2


    Original     		KQB2N60 O-263 smd transistor 2A SMD Transistor nc PDF

    smd transistor 26

    Abstract: SMD Transistor nc L378
    Text: Transistors IC SMD Type 300V N-Channel MOSFET KQB2N30 TO-263 2.1A, 300 V. RDS ON = 3.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1


    Original     		KQB2N30 O-263 smd transistor 26 SMD Transistor nc L378 PDF

    SMD Transistor nc

    Abstract: VOLTAGE SUPPRESSOR SMD KDB7045L suppressor diode smd
    Text: Transistors IC SMD Type N-Channel Logic Level PowerTrench MOSFET KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)


    Original     		KDB7045L O-263 SMD Transistor nc VOLTAGE SUPPRESSOR SMD KDB7045L suppressor diode smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS ON = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON)


    Original     		KDB7045L O-263 PDF

    SMD Transistor nc

    Abstract: TLV300
    Text: Transistors IC SMD Type 200V N-Channel MOSFET KQB5N20 TO-263 4.5A, 200 V. RDS ON = 1.2 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1 100% avalanche tested +0.1 0.81-0.1


    Original     		KQB5N20 O-263 SMD Transistor nc TLV300 PDF

    24 V 20 A diode

    Abstract: smd diode 106 smd 1C 78 DIODE SMD SMD Dual N-Channel Logic Level PowerTrench MOSFET
    Text: IC IC SMD Type Dual N-Channel Logic Level PowerTrench MOSFET KDS6910 Features 7.5 A, 30 V. RDS ON = 13m RDS(ON) = 17m @ VGS = 10 V @ VGS =4.5V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability


    Original     		KDS6910 24 V 20 A diode smd diode 106 smd 1C 78 DIODE SMD SMD Dual N-Channel Logic Level PowerTrench MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type N-Channel PowerTrenchTMMOSFET KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features @ VGS = 10 V 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS ON .


    Original     		KDB5690 O-263 PDF

    SMD Transistor nc

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 500V N-Channel MOSFET KQB9N50 TO-263 9A, 500 V. RDS ON = 0.73 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2


    Original     		KQB9N50 O-263 SMD Transistor nc PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 500V N-Channel MOSFET KQB2N50 TO-263 2.1A, 500 V. RDS ON = 5.3 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.0nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1


    Original     		KQB2N50 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRF1302S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Operating Temperature 0.1max +0.1 1.27-0.1 Repetitive Avalanche Allowed up to Tjmax +0.1 0.81-0.1 2.54 2.54


    Original     		KRF1302S O-263 11gate 22drain 33source PDF

    ld smd transistor

    Abstract: dsa0023459 KRF9610S
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRF9610S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount +0.1 1.27-0.1 +0.2 4.57-0.2 Available in Tape & Reel 5 .2 8 -0+ 0.2.2 Simple Drive Requirements 0.1max +0.1 1.27-0.1 Fast Switching +0.1 0.81-0.1 2.54


    Original     		KRF9610S O-263 ld smd transistor dsa0023459 KRF9610S PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 400V N-Channel MOSFET KQB3N40 TO-263 Features @ VGS = 10 V 1 .2 7 -0+ 0.1.1 2.5A, 400 V. RDS ON = 3.4 Low gate charge (typical 6.0nC) Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54


    Original     		KQB3N40 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 700V N-Channel MOSFET KQB6N70 TO-263 Unit: mm 6.2A, 700 V. RDS ON = 1.5 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 130nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54


    Original     		KQB6N70 O-263 130nC) PDF

    smd diode JC

    Abstract: SMD Transistor nc
    Text: Transistors IC SMD Type 800V N-Channel MOSFET KQB2N80 1 .2 7 -0+ 0.1.1 TO-263 Features 2.4A, 800 V. RDS ON = 6.3 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested lmproved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching


    Original     		KQB2N80 O-263 smd diode JC SMD Transistor nc PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 250V N-Channel MOSFET KQB6N25 TO-263 5.5A, 500 V. RDS ON = 1 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.6nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1


    Original     		KQB6N25 O-263 PDF

    STPS1545CM

    Abstract: TRANSIL DIODE smd
    Text: STPS1545CM PowerSO-10TM POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2 x 7.5 A VRRM 45 V VF 0.57 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY HIGH DISSIPATION MINIATURE PACKAGE


    Original     		STPS1545CM PowerSO-10TM PSO-10, SO-10 STPS1545CM TRANSIL DIODE smd PDF

    diode smd 270a

    Abstract: smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRF4905S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 P-Channel Fully Avalanche Rated 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2


    Original     		KRF4905S O-263 diode smd 270a smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20 PDF

    smd diode marking JC

    Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
    Text: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g


    OCR Scan     		DF30SC3ML STO-220 smd diode marking JC DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220 PDF

    20L60U

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF20L60U U nit: nun Package : STO-220 Weight lü g Typ 10.2 600V 20A Dale code ^ Control No Feature • SMD • SMD • Low Noise • trr-35ns • trr-3 5 n s m & Main Use • T .'f '7 y V i 7 ;®


    OCR Scan     		DF20L60U STO-220 trr-35ns 20L60U li501 J532-1) 20L60U PDF