STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other
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BYW81HR
O-254
O-254
BYW81-200CFSY1
DocID17735
STMicroelectronics smd marking code
st smd diode marking code
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Untitled
Abstract: No abstract text available
Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses
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STPS20100HR
O-254
ESCC5000
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STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate
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STPS20100HR
O-254
ESCC5000
STPS20100HR
DocID16953
STMicroelectronics smd marking code
st smd diode marking code
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st smd diode marking code
Abstract: STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB
Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses
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STPS20100HR
O-254
ESCC5000
st smd diode marking code
STPS20100S1
smd diode B3
STMicroelectronics smd DIODE marking code
STPS20100AFSYHRB
5106
smd diode code B2
smd diode order marking code stmicroelectronics
STPS20100HR
STPS20100SHRB
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ld smd transistor
Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax
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KRF2805S
O-263
11gate
22drain
33source
ld smd transistor
78 DIODE SMD
KRF2805S
104A
smd diode JC 68
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400v p-channel mosfet
Abstract: P-Channel mosfet 400v KQB4P40
Text: Transistors IC SMD Type 400V P-Channel MOSFET KQB4P40 1 .2 7 -0+ 0.1.1 TO-263 Features 3.5A, -400V, RDS on = 3.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @VGS = -10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested Improved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching
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KQB4P40
O-263
-400V,
400v p-channel mosfet
P-Channel mosfet 400v
KQB4P40
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smd 1C
Abstract: 1b smd transistor smd diode JC
Text: IC IC SMD Type 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability
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KDS5670
smd 1C
1b smd transistor
smd diode JC
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDK08G65C5
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Untitled
Abstract: No abstract text available
Text: IC IC MOSFET SMD Type Product specification KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability
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KDS5670
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a2232
Abstract: smd 1C PF202 A-2232
Text: IC IC SMD Type 30V P-Channel PowerTrench MOSFET KDS6685 Features -8.8 A, -30 V. RDS ON = 20m RDS(ON) = 35m @ VGS = -10 V @ VGS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
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KDS6685
a2232
smd 1C
PF202
A-2232
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1
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KDD3680
O-252
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1b.1 smd transistor
Abstract: smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680
Text: Transistors IC SMD Type 100V N-Channel Power Trench MOSFET KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15
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KDD3680
O-252
1b.1 smd transistor
smd transistor nc 61
1B 4 SMD
1b smd transistor
smd diode JC 7
SMD Transistor nc
KDD3680
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3phase MOSFET INVERTER
Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
Text: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.
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Power247TM,
3phase MOSFET INVERTER
2KW bldc
3 phase IGBT inverter
30KW brushless dc motor
3 phase 75kW motor soft circuit diagram
PWM 220v ac stabilizer
PFC 3kw
FSBS15CH60
FSBB30CH60
3 phase inverters circuit diagram igbt 30kw
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diode SMD CODE sm 17
Abstract: C67078-A5007-A2 E3045 GPT05155 C67078-A5007 smd rgs BTS100
Text: Smart Highside Power Switch TEMPFET BTS 100 Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS on Package Ordering Code BTS 100
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O-220AB
C67078-A5007-A2
E3045
E3045A
GPT05155
C67078-A5007-A7
C67078-A5007-A12
diode SMD CODE sm 17
C67078-A5007-A2
E3045
GPT05155
C67078-A5007
smd rgs
BTS100
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4606 MOSFET INVERTER
Abstract: SMD MOSFET DRIVE DATASHEET 4606 mosfet cross reference inverter 4606 A12A 4606 inverter ic eltek flatpack LED DRIVER ana 618 uc3843 inverter circuit 4606 inverter KA3843
Text: Shortform Catalog February 2001 http://www.micrel.com/ Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • +1 408 944-0800 • +1 408 944-0970 Micrel Shortform Catalog February 2001 2001 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any
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C67078-A5007-A2
Abstract: E3045 GPT05155 C67078-A5007 diode SMD CODE sm 17 C67078-A5007-A7 TEMPFET
Text: TEMPFET BTS 100 Smart Highside Power Switch Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS on Package Ordering Code BTS 100
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O-220AB
C67078-A5007-A2
C67078-A5007-A2
E3045
GPT05155
C67078-A5007
diode SMD CODE sm 17
C67078-A5007-A7
TEMPFET
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
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transistor smd MJ 145
Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter
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q67042-s4131
np-60
transistor smd MJ 145
d 132 smd code diode
d 132 smd diode
qd SMD
SMD TRANSISTOR qd
BUZ31
smd rgs
smd diode 145
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A7 SMD TRANSISTOR
Abstract: smd JH transistor smd diode a7 smd transistor A7 SMD a7 Transistor 6 pin TRANSISTOR SMD CODE 21 smd transistor js BUZ21 smd diode os smd transistor A7 s 50
Text: Infineon technologies BUZ 21 SMD SIPMOS Power T ransistor • N channel • Enhancement mode tab • Avalanche-rated Pin 1 Pin 2 Pin 3 c? (/> D Type BUZ 21 SMD 100 V 1D R OS(on) 21 A 0.085 Í2 Package d 2p a k Ordering Code Q67042-S4132 Maximum Ratings
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BUZ21
Q67042-S4132
A7 SMD TRANSISTOR
smd JH transistor
smd diode a7
smd transistor A7
SMD a7 Transistor
6 pin TRANSISTOR SMD CODE 21
smd transistor js
smd diode os
smd transistor A7 s 50
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1FW smd
Abstract: SMD 1FW 1FW 55 1FW 14 smd 1FW 75 1FW 85 1FW 29 BTS100 1FW 60 smd code 12.00 Jn
Text: SIEMENS Smart Highside Power Switch TEMPFET Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type Vos h BTS 100 -5 0 V -8 A ^DS<on 0.3 £2 Package Ordering Code
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O-220AB
C67078-A5007-A2
E3045
E3045A
C67078-A5007-A7
C67078-A5007-A12
1FW smd
SMD 1FW
1FW 55
1FW 14 smd
1FW 75
1FW 85
1FW 29
BTS100
1FW 60
smd code 12.00 Jn
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Drive circuit for IGBT using IR2130
Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Text: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm
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T0-220
IRGBC30KD2-S)
Drive circuit for IGBT using IR2130
Schematic Drive circuit for IGBT using IR2130
SMD LD3
smd diode h15
AN-985
two IR2130 12 output
single phase IR2130
MP816
ac motor speed control circuit ir2130
h1n1
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A4t 29 smd
Abstract: smd a4t
Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current
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O-220
C67078-S1310-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
A4t 29 smd
smd a4t
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Untitled
Abstract: No abstract text available
Text: SIEM ENS TEMPFET BTS115A Features • • • • • N channel Logic level Enhancem ent mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Inform ation
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BTS115A
C67078-S5004-A2
C67078-S5004-A8
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transistor buz 104
Abstract: No abstract text available
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package
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O-220
C67078-S1353-A2
transistor buz 104
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