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    SMD DIODE HB Search Results

    SMD DIODE HB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE HB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD diode color code

    Abstract: SLSNNBS102TS Samsung Electro-Mechanics smd diode j smd transistor 501 MAX260 DIODE SMD 33 Samsung Electro-Mechanics led 25cycles COLOR CODE ON SMD DIODE
    Text: Light Emitting Diode - SMD LED - Light Emitting Diode - SMD LED • INTRODUCTION A light-emitting diode LED is a semiconductor device that emits visible light when an electric current passes through it. Samsung is manufacturing several kinds of LEDs, specially focusing on


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    PDF 630nm 700nm) 400nm) 830nm MAX260 120max 120sec 30sec MAX300, SMD diode color code SLSNNBS102TS Samsung Electro-Mechanics smd diode j smd transistor 501 DIODE SMD 33 Samsung Electro-Mechanics led 25cycles COLOR CODE ON SMD DIODE

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA7Q24G RoHS Device C Voltage: 13 Volts Current: 50 mA Package (QSOP-24) Feature Schematic This diode network is designed to provide eighteen channels for active termination of high-speed data


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    PDF CDA7Q24G CDA7Q24 QSOP-24) MDS0903006A

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    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of


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    PDF CDA8S03G 10Volts OT-23) MDS0903007A

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    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA2Q20-G RoHS Device C 0212 CDA2Q20 Voltage: 10Volts Current: 25 mA Package (QSOP-20) Feature This diode network is designedto provide seventeenchannels for active termination of high-speed data signals to eliminate


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    PDF CDA2Q20-G CDA2Q20 10Volts QSOP-20) MDS0903001A

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    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA7Q24-G RoHS Device Package (QSOP-24) Feature Schematic This diode network is designed to provide eighteen channels for active termination of high-speed data signals to 0212 CDA7Q24 C Voltage: 13 Volts


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    PDF CDA7Q24-G CDA7Q24 QSOP-24) MDS0903006A

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA2Q20G RoHS Device C 0212 CDA2Q20 Voltage: 10Volts Current: 25 mA Package (QSOP-20) Feature This diode network is designed to provide seventeen channels for active termination of high-speed data signals to eliminate


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    PDF CDA2Q20G CDA2Q20 10Volts QSOP-20) MDS0903001A

    Untitled

    Abstract: No abstract text available
    Text: Diode Network / ESD Suppressor COMCHIP SMD DIODE SPECIALIST CDA4S14G RoHS Device Voltage: 13 Volts Current: 50 mA Package (SOT-143) Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal


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    PDF CDA4S14G OT-143) MDS0903003A

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    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and


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    PDF CDA6N08G MDS0903005A

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    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08-G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designedto provide six channels for active termination of high-speed data signals to eliminate signal undershootand


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    PDF CDA6N08-G MDS0903005A

    3055 smd

    Abstract: 3578 smd AA3535QR425Z1S-N1 LM 3177 lm 3751 4221 transistor datasheet AA3535QR425Z1S-C1 AA3535QR425Z1S-W2 cd 3274 datasheets transistor k 4212
    Text: 3.5x3.5 mm SMD CHIP LED LAMP AA3535QR425Z1S SERIES ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features The source color devices are made with InGaN on Al2O3 z White SMD package, silicone resin. substrate Light Emitting Diode.


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    PDF AA3535QR425Z1S 2000pcs SEP/24/2010 DSAK2936 3055 smd 3578 smd AA3535QR425Z1S-N1 LM 3177 lm 3751 4221 transistor datasheet AA3535QR425Z1S-C1 AA3535QR425Z1S-W2 cd 3274 datasheets transistor k 4212

    AA3535QR425Z1S-N1

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP AA3535QR425Z1S SERIES ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features The source color devices are made with InGaN on Al2O3 z White SMD package, silicone resin. substrate Light Emitting Diode.


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    PDF AA3535QR425Z1S 2000pcs ste3592 MAR/23/2010 DSAK2936 AA3535QR425Z1S AA3535QR425Z1S-N1

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.


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    PDF KA-3535SELZ4S 2000pcs OCT/14/2011 KA-3535SELZ4S DSAM0798

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    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP ATTENTION Part Number: AA3535SEL1Z1S Hyper Orange OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.


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    PDF AA3535SEL1Z1S 2000pcs FEB/02/2013 DSAJ4024

    SMD LED

    Abstract: No abstract text available
    Text: Part Number: XZMD20X92S-4 3.5x3.5 mm SMD CHIP LED LAMP Features Applications 3.5mm X 3.5mm X 1.15mm SMD LED Signal and symbol luminaire for orientation. Zener diode provided for ESD Protection Marker lights e.g. steps, exit ways, etc . IR-reflow compatible


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    PDF XZMD20X92S-4 000pcs XDSB6939 XZxxx92x SMD LED

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.


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    PDF AA3535SEL1Z1S 2000pcs DSAJ4024 MAY/09/2011

    XZMD20X92S-4

    Abstract: No abstract text available
    Text: Part Number: XZMD20X92S-4 3.5x3.5 mm SMD CHIP LED LAMP Features Applications 3.5mm X 3.5mm X 1.15mm SMD LED Signal and symbol luminaire for orientation. Zener diode provided for ESD Protection Marker lights e.g. steps, exit ways, etc . IR-reflow compatible


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    PDF XZMD20X92S-4 000pcs XDSB6939 XZMD20X92S-4

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SYLZ4S ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Super Bright Yellow Description The source color devices are made with AlGaInP Light Features Emitting Diode. z White SMD package, silicone resin.


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    PDF KA-3535SYLZ4S 2000pcs DSAM0799 MAR/29/2013

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.


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    PDF KA-3535SELZ4S 2000pcs ori013 DSAM0798 MAR/29/2013

    optical CD pickup assembly

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.


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    PDF AA3535SEL1Z1S 2000pcs DSAJ4024 OCT/14/2011 optical CD pickup assembly

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. White SMD package, silicone resin.


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    PDF KA-3535SELZ4S 2000pcs OCT/14/2011 DSAM0798

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.


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    PDF KA-3535SELZ4S 2000pcs DSAM0798 MAR/29/2013

    GC smd diode

    Abstract: IOA10 smd marking gc diode
    Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG


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    PDF STO-220 DF30JC4 tec40 GC smd diode IOA10 smd marking gc diode

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use


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    PDF STO-220 DF40SC4 DIODE JS.9 smd

    smd diode marking LM

    Abstract: smd diode "marking 77" SMD diode TSA smd diode HB RW marking Diode marking TY
    Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC3L Unit^mm W eight 0.326g Typ 30 V 10A Feature <SMD • SMD • Tj=150°C •<SV f=0.45V 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating 1 High lo Rating -Small-PKG • P r r s m 7 7A ' 5 > ^ i S IÎE


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    PDF DE10SC3L smd diode marking LM smd diode "marking 77" SMD diode TSA smd diode HB RW marking Diode marking TY