smd diode B4
Abstract: smd diode code B4 SMD DIODE DEVICE marking b4 b4 smd diode DIODE MARKING B4 CDBF0145-HF marking code b4 SMD marking B4 SMD MARKING CODE 102 diode B4
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0145-HF RoHS Device Io = 100 mA V R = 45 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin/leadless package. 0.051(1.30) 0.043(1.10)
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CDBF0145-HF
MIL-STD-750
F/1005
QW-G1062
smd diode B4
smd diode code B4
SMD DIODE DEVICE marking b4
b4 smd diode
DIODE MARKING B4
CDBF0145-HF
marking code b4 SMD
marking B4
SMD MARKING CODE 102
diode B4
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smd diode B4
Abstract: smd diode code B4 SMD DIODE DEVICE marking b4 b4 smd diode SMD MARKING CODE b4 DIODE MARKING B4 marking code b4 SMD marking B4 diode b4 DIODE schottky SMD MARKING CODE 45
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0145-HF RoHS Device Io = 100 mA V R = 45 Volts Features 0603(1608) Halogen free. 0.071(1.80) 0.063(1.60) Designed for mounting on small surface. Extremely thin/leadless package. 0.039(1.00) 0.031(0.80)
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CDBU0145-HF
MIL-STD-750
U/0603
QW-G1040
smd diode B4
smd diode code B4
SMD DIODE DEVICE marking b4
b4 smd diode
SMD MARKING CODE b4
DIODE MARKING B4
marking code b4 SMD
marking B4 diode
b4 DIODE schottky
SMD MARKING CODE 45
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smd diode B4
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBF0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) -Low leakage current.
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CDBF0145-HF
1005/SOD-323F
/SOD-323F
MIL-STD-750
OD-323F)
QW-G1062
smd diode B4
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBU0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin/leadless package. -Low leakage current. (I R =0.1uA typ.@V R =10V)
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CDBU0145-HF
0603/SOD-523F
/SOD-523F
MIL-STD-750
OD-523F)
QW-G1040
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBF0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) -Low leakage current.
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CDBF0145-HF
1005/SOD-323F
/SOD-323F
MIL-STD-750
unl13
OD-323F)
QW-G1062
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBU0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin/leadless package. -Low leakage current. (I R =0.1uA typ.@V R =10V)
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CDBU0145-HF
0603/SOD-523F
/SOD-523F
MIL-STD-750
unles13
OD-523F)
QW-G1040
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PDF
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varistor 472m
Abstract: 5024x t60403-k5024-x044 5024X044 VAC-5024-X044 ST7580 472m varistor TRANSIL DIODE smd MB542B-01 Tantalum Capacitor smd
Text: AN3273 Application note STEVAL-IPP001V2: E-meter PLM demonstration board Introduction The purpose of this application note is to describe the use of the E-meter PLM demonstration board both in standalone and network mode. The E-meter demonstration board can be used as a guideline to design a typical energy-meter board for smart metering
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AN3273
STEVAL-IPP001V2:
STM32F103VE
varistor 472m
5024x
t60403-k5024-x044
5024X044
VAC-5024-X044
ST7580
472m varistor
TRANSIL DIODE smd
MB542B-01
Tantalum Capacitor smd
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t60403-k5024-x044
Abstract: ST7580 STM32F103VET STM32 RM0008 vac t60403-k5024-x044 8097 microcontroller architecture and details RM0008 Reference Manual STM32F103xC STM32-RTC TRANSIL DIODE smd VAC-5024-X044
Text: UM0997 User manual STEVAL-IPP001V2: E-meter demonstration board with PLM Introduction The E-meter demonstration board can be used as a guideline to designing a typical energy meter board for smart metering applications. It was designed to include advanced features
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UM0997
STEVAL-IPP001V2:
RS232/IrDA
t60403-k5024-x044
ST7580
STM32F103VET
STM32 RM0008
vac t60403-k5024-x044
8097 microcontroller architecture and details
RM0008 Reference Manual STM32F103xC
STM32-RTC
TRANSIL DIODE smd
VAC-5024-X044
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CDBF0145-HF
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBF0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 1005/SOD-323F - Designed for mounting on small surface. 0.102 2.60 0.095(2.40) - Extremely thin / leadless package. - Low leakage current. (IR=0.1uA typ.@VR=10V)
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Original
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CDBF0145-HF
1005/SOD-323F
1005/SOD-323F
MIL-STD-750
QW-G1062
CDBF0145-HF
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PDF
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CDBU0145-HF
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBU0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F - Designed for mounting on small surface. 0.071 1.80 0.063(1.60) - Extremely thin / leadless package. - Low leakage current. (IR=0.1uA typ.@VR=10V)
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Original
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CDBU0145-HF
0603/SOD-523F
0603/SOD-523F
MIL-STD-750
QW-G1040
CDBU0145-HF
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBU0145 I o = 100 mA V R = 45 Volts RoHS Device Features 0603/SOD-523F - Designed for mounting on small surface. 0.071 1.80 0.063(1.60) - Extremely thin / leadless package. - Low leakage current. (IR=0.1uA typ.@VR=10V) - Majority carrier conduction.
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CDBU0145
0603/SOD-523F
0603/SOD-523F
MIL-STD-750
QW-A1019
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75N3LLH6
Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
Text: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V
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STD75N3LLH6
STU75N3LLH6,
STU75N3LLH6-S
STU75N3LLH6
75N3LLH6
STD75N3LLH6
smd diode code B4 ST
STD75N3L
STU75N3LLH6
095B4
75n3l
TO-251 footprint
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75n3l
Abstract: STU75N3LLH6 STD75N3LLH6 STD75N3L 75N3LLH6 75n3 std75n STD75N3LL
Text: STD75N3LLH6 STU75N3LLH6 N-channel 30 V, 0.0045 Ω, 75 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.006 Ω 75 A 3 3 2 • RDS(on) * Qg industry benchmark
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STD75N3LLH6
STU75N3LLH6
AM01474v1
75n3l
STU75N3LLH6
STD75N3L
75N3LLH6
75n3
std75n
STD75N3LL
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VARISTOR k275
Abstract: K95 varistor S20 K275 varistor varistor s20 k275 "Surge Arresters" pspice siemens automotive relay dc 12v S20K275 sm 323 module Siemens varistor s20k275 k275 varistor
Text: 3 Application and design examples 3.1 Switching off inductive loads The discharge of an inductor produces high voltages that endanger both the contact breaker switching transistor and the like and the inductor itself. According to equation 16 the energy stored
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CC0402KRX7R9BB102
Abstract: yageo R68 choke C210-C215 R118-R122 AA19 smd diode SMD capacitor aa4 aa5 C216-C221 smd diode u1j sot23-5 SMD CODE E5 c225 diode smd
Text: S1D13771 S5U13771B00B USB Evaluation Board User Manual Document Number: X82A-G-001-01 Status: Revision 1.01 Issue Date: 2006/07/26 SEIKO EPSON CORPORATION 2006. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in
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S1D13771
S5U13771B00B
X82A-G-001-01
X82A-G-001-00
CC0402KRX7R9BB102
yageo R68 choke
C210-C215
R118-R122
AA19 smd diode
SMD capacitor aa4 aa5
C216-C221
smd diode u1j
sot23-5 SMD CODE E5
c225 diode smd
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CIE1931
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APT1608RWF/A
2000PCS
ELECTROSTAT51
4600k
DSAG3636
JUN/05/2007
CIE1931
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PDF
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APHK1608RWC
Abstract: APHK1608RWC-A BTA12-700BW CIE1931
Text: 1.6x0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHK1608RWC/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APHK1608RWC/A
2000PCS
4600k
DSAG3640
MAY/17/2007
APHK1608RWC
APHK1608RWC-A
BTA12-700BW
CIE1931
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.2x1.6 mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APK3216RWC/Z-F01 WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.
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APK3216RWC/Z-F01
2000PCS
6500K
CIE1931
5600k
4600k
DSAH3762
JUN/11/2007
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pt-120 Board
Abstract: CIE1931
Text: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APTK2012RWC/A-F01 WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APTK2012RWC/A-F01
2000PCS
4600k
DSAH3789
APR/26/2007
pt-120 Board
CIE1931
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PDF
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CIE1931
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APTD3216RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APTD3216RWF/A
2000PCS
4600k
DSAG6712
MAY/17/2007
CIE1931
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PDF
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CIE1931
Abstract: No abstract text available
Text: 2.8X1.0mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APKA2810RWC/A-F01 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or
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APKA2810RWC/A-F01
2000PCS
4600k
DSAH3766
MAY/03/2007
CIE1931
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PDF
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CIE1931
Abstract: No abstract text available
Text: 3.2mmx1.6mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT3216RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APT3216RWF/A
2000PCS
ELECTROSTATI18
4600k
DSAH2303
MAY/17/2007
CIE1931
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PDF
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CIE1931
Abstract: No abstract text available
Text: 3.2x1.6 mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APK3216RWC/A-F01 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APK3216RWC/A-F01
2000PCS
4600k
DSAH3761
APR/26/2007
CIE1931
|
PDF
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CIE1931
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT2012RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.
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APT2012RWF/A
2000PCS
ELECTROSTATIC18
4600k
DSAG3804
MAY/17/2007
CIE1931
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PDF
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