smd marking DA QT
Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
smd marking DA QT
24W16
C2608
SMD mosfet MARKING code TJ
NTHD3133PFT1G
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Untitled
Abstract: No abstract text available
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
NTHD4P02F
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NTHD3101FT1G
Abstract: NTHD3101F NTHD3101FT1 TL82
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTHD3101F/D
NTHD3101FT1G
NTHD3101F
NTHD3101FT1
TL82
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P−Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
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NTHD3101FT1
Abstract: NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
NTHD3101FT1
NTHD3101FT1G
NTHD3101F
NTHD3101FT3
NTHD3101FT3G
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Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
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SMD mosfet MARKING code TJ
Abstract: smd diode 303 Semiconductor 5M MARKING CODE SCHOTTKY DIODE K 3850 N Mosfet Power
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, Single N - Channel, with 1.0 A Schottky Barrier Diode, ChipFET Features • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP-6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
SMD mosfet MARKING code TJ
smd diode 303 Semiconductor
5M MARKING CODE SCHOTTKY DIODE
K 3850 N Mosfet Power
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Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
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UVLED365_SMD
Abstract: No abstract text available
Text: UVLED365-SMD TECHNICAL DATA 365 nm SMD UVLED Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Type Absolute Maximum Ratings
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UVLED365-SMD
uvled365
UVLED365_SMD
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UVLED375-SMD
Abstract: No abstract text available
Text: UVLED375-SMD TECHNICAL DATA 375 nm SMD UVLED Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Type Absolute Maximum Ratings
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UVLED375-SMD
UVLED375-SMD
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TSAL6400
Abstract: TSHF5400 TSOP5700
Text: TSOP5700 Vishay Semiconductors IR Receiver for High Data Rate PCM at 455 kHz Description The TSOP5700 is a miniaturized SMD IR receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP5700
TSOP5700
18-Jul-08
TSAL6400
TSHF5400
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TSAL6400
Abstract: TSHF5400 TSOP5700
Text: TSOP5700 Vishay Semiconductors IR Receiver for High Data Rate PCM at 455 kHz Description The TSOP5700 is a miniaturized SMD IR receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP5700
TSOP5700
08-Apr-05
TSAL6400
TSHF5400
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transistor SMD Y1
Abstract: smd transistor Y1 sot-23
Text: Lighting Ballast - American Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4
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BUF644
100-kHz
O-220
BUF654
BUF742-S-069
O-252
transistor SMD Y1
smd transistor Y1 sot-23
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y1 smd transistor
Abstract: transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd
Text: Lighting Ballast - European Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4
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O-252
BUF644
100-kHz
O-220
BUF654
BUF742-S-069
y1 smd transistor
transistor SMD Y1
c3 smd transistor
smd transistor Y1 sot-23
TRANSISTOR SMD
x2 smd transistor
diode ZENER C2 smd
1/a4w smd transistor
Y1 smd
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S1 DIODE
Abstract: cil smd G003 G008 QFN28 Hi-702 DISTANCE MEASUREMENT cih smd n type laser diode driver SMD DIODE 512
Text: iC-NZ Fail-Safe Laser Diode Driver 9090-02-046 Rev 1 18/02/2010 iC-NZ FAIL-SAFE LASER DIODE DRIVER FEATURES APPLICATIONS Peak value controlled three level laser switch for operation from CW up to 155 MHz Spike-free switching of laser currents of ca. 100 mA per
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ISO9001
S1 DIODE
cil smd
G003
G008
QFN28
Hi-702
DISTANCE MEASUREMENT
cih smd
n type laser diode driver
SMD DIODE 512
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pml 003 am
Abstract: smd diode code B2 diode SMD t01 ic pml 003 am hitachi laser diode diode b2 smd IC-NZ SMD diode B2 hitachi class 1 laser Laser Diode 10 pin
Text: iC-NZ FAIL-SAFE LASER DIODE DRIVER Rev B2, Page 1/20 FEATURES APPLICATIONS ♦ Peak value controlled three level laser switch for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of ca. 100 mA per channel 320 mA total from 3.5 to 5 V supply voltage
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QFN28
QFN28
D-55294
pml 003 am
smd diode code B2
diode SMD t01
ic pml 003 am
hitachi laser diode
diode b2 smd
IC-NZ
SMD diode B2
hitachi class 1 laser
Laser Diode 10 pin
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BBY62 Double variable capacitance diode DESCRIPTION The BBY62 is a double variable capacitance diode in a microminiature SOT143 envelope. It is intended for application in electronic tuners using SMD technology.
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BBY62
BBY62
OT143
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FAG 29 diode
Abstract: K/FAG 29 diode
Text: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A /60V FEATURES 1.2 .047 — 4.8<1.9) MAX O |SOUARE-PAKlTO-263AB (SMD) Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB > 914158 . ) 10.6 .417) 8.5U35) 9.6 .378)
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C30T06Q
GCQ30A06
C30T06Q-11A
FCQ30A06
SOUARE-PAKlTO-263AB
O-220:
C30T06Q-11A
T0-220AB
FAG 29 diode
K/FAG 29 diode
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FCQ30A06
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode
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O-263AB
C30T06Q
O-220:
C30T06Q-11A
T0-220AB
GCQ30A06
3A/60V
GCQ30A06
FCQ30A06
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