SMD 8A TRANSISTOR
Abstract: smd transistor 8A transistor SMD 8A 2SK3484
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3484 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.5 V, ID = 8A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 148m Low Ciss: Ciss = 900 pF TYP. Unit: mm +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 MAX. (VGS = 10 V, ID = 8A)
|
Original
|
2SK3484
O-252
SMD 8A TRANSISTOR
smd transistor 8A
transistor SMD 8A
2SK3484
|
PDF
|
MARKING SMD PNP TRANSISTOR 2a
Abstract: SMD 8A TRANSISTOR SMD TRANSISTOR MARKING 2A TRANSISTOR SMD PNP 1A SMD BR TRANSISTOR SMD 1a 9 MARKING SMD PNP TRANSISTOR 1a MARKING SMD PNP TRANSISTOR FCX789A smd ic marking 1A
Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter
|
Original
|
FCX789A
-100mA
-10mA
-10mA
-50mA,
50MHz
-500mA,
-50mA
MARKING SMD PNP TRANSISTOR 2a
SMD 8A TRANSISTOR
SMD TRANSISTOR MARKING 2A
TRANSISTOR SMD PNP 1A
SMD BR
TRANSISTOR SMD 1a 9
MARKING SMD PNP TRANSISTOR 1a
MARKING SMD PNP TRANSISTOR
FCX789A
smd ic marking 1A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
|
Original
|
FCX789A
-10mA
-10mA
-50mA,
50MHz
-500mA,
-50mA
|
PDF
|
SMD 8A TRANSISTOR
Abstract: smd transistor 8A transistor SMD 8A diode 60V 8A 2SJ302
Text: MOSFET SMD Type Mos Field Effect Power Transistor 2SJ302 TO-263 +0.1 1.27-0.1 RDS on 0.24 (VGS=-4V,ID=-6A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss Ciss=1200PF TYP. 5.60 (VGS=-10V,ID=-8A) +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on) 0.1 +0.2 8.7-0.2
|
Original
|
2SJ302
O-263
1200PF
SMD 8A TRANSISTOR
smd transistor 8A
transistor SMD 8A
diode 60V 8A
2SJ302
|
PDF
|
SMD 8A TRANSISTOR
Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
Text: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).
|
Original
|
KDB4020P
FDB4020P)
O-263
SMD 8A TRANSISTOR
transistor SMD 8A
smd transistor 8A
FDB4020P
|
PDF
|
1455
Abstract: BCU83
Text: BCU83–SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .0 2 .5 1 .5 4 .2 5 m a x . 1 .6 0 .4 0 0 .4 0 Ideal for high current driver applications requiring low loss devices FEATURES • LOW VCE SAT • HIGH CURRENT 0 .5 0
|
Original
|
BCU83
300ms
1455
|
PDF
|
2SC4523
Abstract: 8A400
Text: Transistors SMD Type High-Speed Switching Applications 2SC4523 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max
|
Original
|
2SC4523
O-252
500mA
200mA
2SC4523
8A400
|
PDF
|
MARKING SMD PNP TRANSISTOR 2a
Abstract: MARKING SMD PNP TRANSISTOR SMD BR 12 FCX717 SMD 8A TRANSISTOR
Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE sat 77mÙ at 3A.
|
Original
|
FCX717
-50mA
-10mA
-50mA,
100MHz
MARKING SMD PNP TRANSISTOR 2a
MARKING SMD PNP TRANSISTOR
SMD BR 12
FCX717
SMD 8A TRANSISTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSO4804 Preliminary data OptiMOS =Small-Signal-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
|
Original
|
BSO4804
BSO4804
Q67042-S4097
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE sat 77mÙ at 3A.
|
Original
|
FCX717
-50mA
-10mA
-50mA,
100MHz
|
PDF
|
smd transistor 8A sot23
Abstract: SMD 8A TRANSISTOR SOT-23 marking 717 FMMT717 SMD BR 17
Text: Transistors IC SMD Type Switching Transistor FMMT717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 IC up to 10A peak pulse current. 1 0.55 IC CONT 2.5A. +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe characteristics up to 10A pulsed .
|
Original
|
FMMT717
OT-23
625mW
-50mA
-10mA,
-100mA,
-50mA
100MHz
smd transistor 8A sot23
SMD 8A TRANSISTOR
SOT-23 marking 717
FMMT717
SMD BR 17
|
PDF
|
S4097
Abstract: BSO4804 smd 67A switching smd code "67A"
Text: BSO4804 Preliminary data OptiMOS =Small-Signal-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
|
Original
|
BSO4804
Q67042-S4097
S4097
BSO4804
smd 67A switching
smd code "67A"
|
PDF
|
smd 67A switching
Abstract: smd diode 67A S4097 TRANSISTOR SMD MARKING CODE 7A BSO4804 67a smd smd code 67a
Text: BSO4804 OptiMOS =Small-Signal-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
|
Original
|
BSO4804
Q67042-S4097
smd 67A switching
smd diode 67A
S4097
TRANSISTOR SMD MARKING CODE 7A
BSO4804
67a smd
smd code 67a
|
PDF
|
SOT-23 marking 717
Abstract: No abstract text available
Text: Transistors IC ransistor SMD Type Product specification FMMT717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 IC up to 10A peak pulse current. 1 0.55 IC CONT 2.5A. +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe characteristics up to 10A pulsed .
|
Original
|
FMMT717
OT-23
625mW
-50mA
-10mA,
-100mA,
-50mA
100MHz
SOT-23 marking 717
|
PDF
|
|
|
Schottky diode TO220 15A 1000V
Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
|
Original
|
ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
BDX53
BDX54
BDW93
Schottky diode TO220 15A 1000V
smd transistor c011
diode matrix rom
LM317 DIP PACK
transistor SMD 5kw
smd L272
bdx54 smd
LM317 SMD
smps power supply 1500w amp
TRANSIL DIODE smd
|
PDF
|
IPM04S0A0S10
Abstract: IPM12S0A0S08
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
QS9000,
OHSAS18001
EN60950)
73/23/EEC
93/68/EEC
IPM12S
x6220
IPM04S0A0S10
IPM12S0A0S08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
QS9000,
OHSAS18001
EN60950)
73/23/EEC
93/68/EEC
IPM12S
x6220
IPM12S0A008
|
PDF
|
IPM04S0A0S10
Abstract: 509K
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
QS9000,
OHSAS18001
EN60950)
73/23/EEC
93/68/EEC
IPM12S
x6220
IPM04S0A0S10
509K
|
PDF
|
IPM12S0A0R08FA
Abstract: s08f
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
QS9000,
OHSAS18001
EN60950)
73/23/EEC
93/68/EEC
IPM12S
x6220
IPM12S0A008
IPM12S0A0R08FA
s08f
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
QS9000,
OHSAS18001
EN60950)
73/23/EEC
93/68/EEC
IPM12S
x6220
|
PDF
|
IPM12S0A0R08FA
Abstract: No abstract text available
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
QS9000,
OHSAS18001
EN60950)
73/23/EEC
93/68/EEC
IPM12S
x6220
IPM12S0A008
IPM12S0A0R08FA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FEATURES High efficiency: 93% @ 12Vin, 5V/6A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection
|
Original
|
12Vin,
EN60950)
IPM12S
x6220
|
PDF
|
ILA03N60
Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Text: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
|
Original
|
ILB03N60
P-TO-263-3-2
O-263AB)
Q67040-S4627
ILA03N60
ILB03N60
Q67040-S4627
SDP04S60
Infineon MOSFET 1000V
|
PDF
|
T0252
Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
Text: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, DS4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
|
OCR Scan
|
ITS08F06
DS4711
DS4711-3
ITS08F06
T0252
SMD making code 2f
ITS08F06B
ITS08F06G
ITS08F06H
|
PDF
|
