Untitled
Abstract: No abstract text available
Text: Zener Diodes 2W Type No. Axial Lead 2EZ2.7D5 2EZ3.0D5 2EZ3.3D5 2EZ3.6D5 2EZ3.9D5 2EZ4.3D5 2EZ4.7D5 2EZ5.1D5 2EZ5.6D5 2EZ6.2D5 2EZ6.8D5 2EZ7.5D5 2EZ8.2D5 2EZ9.1D5 2EZ10D5 2EZ11D5 2EZ12D5 2EZ13D5 2EZ14D5 2EZ15D5 2EZ16D5 2EZ17D5 2EZ18D5 2EZ19D5 2EZ20D5 2EZ22D5
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2EZ10D5
2EZ11D5
2EZ12D5
2EZ13D5
2EZ14D5
2EZ15D5
2EZ16D5
2EZ17D5
2EZ18D5
2EZ19D5
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smd diode code g3
Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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160-0055X1
160-0055X1-BL
160-0055X1-SL
160-0055X1-SMD
160-0055X1
smd diode code g3
smd diode code g4
smd diode g6 DIODE S4 39 smd diode
smd diode S4
smd diode code mj
smd diode S6
DIODE marking S4 45
SMD S6 55 A
smd diode code SL
SMD diode MARKING CODE g6
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IXYS GMM 3x160-0055X2
Abstract: marking G3 smd diode g6 3x160-0055X2
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
IXYS GMM 3x160-0055X2
marking G3
smd diode g6
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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Untitled
Abstract: No abstract text available
Text: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
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MTI120WX55GD
Abstract: s4 35 diode marking code
Text: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x160-0055X2
3x160-0055X2
MTI120WX55GD
s4 35 diode marking code
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SMD Transistors w04
Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
Text: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package
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OT143
BFS17W
BFS17AW
S858TA3
TSDF1205W
S503TRW
TSDF1220W
S504TRW
TSDF1250W
S505TRW
SMD Transistors w04
smd transistor w18
w2f smd transistor
w18 smd transistor
smd transistor w04
SMD Transistor W03
TRANSISTOR w2f sot23
transistor SMD w04
SMD W2f transistor
smd transistor marking e5
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AN-994
Abstract: smd marking XF to262 pcb footprint IRF2804
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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5332A
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
EIA-418.
O-220AB
AN-994
smd marking XF
to262 pcb footprint
IRF2804
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pml 003 am
Abstract: smd diode A1 ic pml 003 am pml 009 A1 SMD DIODE D552 702 DIODE smd ua701 SMD DIODE 512 IC 2003
Text: iC-NZ FAIL-SAFE LASER DIODE DRIVER Rev A1, Page 1/21 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Peak value controlled threefold laser switch for operation from CW up to 155 MHz Spike-free switching of laser currents of 100 mA per channel from 3.5 to 5 V supply voltage
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QFN28
QFN28
D-55294
pml 003 am
smd diode A1
ic pml 003 am
pml 009
A1 SMD DIODE
D552
702 DIODE smd
ua701
SMD DIODE 512
IC 2003
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to262 pcb footprint
Abstract: AN-994 IRF2804LPBF smd marking 634 IRF2804
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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5332A
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
EIA-418.
O-220AB
to262 pcb footprint
AN-994
IRF2804LPBF
smd marking 634
IRF2804
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S1 DIODE
Abstract: cil smd G003 G008 QFN28 Hi-702 DISTANCE MEASUREMENT cih smd n type laser diode driver SMD DIODE 512
Text: iC-NZ Fail-Safe Laser Diode Driver 9090-02-046 Rev 1 18/02/2010 iC-NZ FAIL-SAFE LASER DIODE DRIVER FEATURES APPLICATIONS Peak value controlled three level laser switch for operation from CW up to 155 MHz Spike-free switching of laser currents of ca. 100 mA per
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ISO9001
S1 DIODE
cil smd
G003
G008
QFN28
Hi-702
DISTANCE MEASUREMENT
cih smd
n type laser diode driver
SMD DIODE 512
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20110307i
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smd diode code SL
Abstract: SMD mosfet MARKING code TJ SMD MARKING QG 6 PIN DIODE marking S4 06 200909 smd diode code g3 smd diode g6 160-0055X1 SMD MARKING g5 SMD mosfet MARKING code TC
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20090930h
smd diode code SL
SMD mosfet MARKING code TJ
SMD MARKING QG 6 PIN
DIODE marking S4 06
200909
smd diode code g3
smd diode g6
160-0055X1
SMD MARKING g5
SMD mosfet MARKING code TC
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smd diode code SL
Abstract: Diode smd s6 46 160-0055X1 SMD MARKING g4
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
20110307i
smd diode code SL
Diode smd s6 46
160-0055X1
SMD MARKING g4
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20070906d
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10d 470K
Abstract: 10D511K 10D330 10D431K 10d241k MOV - 510 10d391k 10D470K VARISTOR 10D431K
Text: PL IA NT CO M 01K *R oH S 10D2 Features Applications • High voltage rating ■ Power supplies ■ High current rating ■ Power systems ■ Bidirectional ■ Line voltage ■ Surge protection ■ Telecom systems ■ Fast response time ■ White goods / appliances
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MOV-10DxxxK
10d 470K
10D511K
10D330
10D431K
10d241k
MOV - 510
10d391k
10D470K
VARISTOR 10D431K
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07D471K VARISTOR
Abstract: 07D471k
Text: PL IA NT CO M *R oH S 07D2 01K Features Applications • High voltage rating ■ Power supplies ■ High current rating ■ Power systems ■ Bidirectional ■ Line voltage ■ Surge protection ■ Telecom systems ■ Fast response time ■ White goods / appliances
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MOV-07DxxxK
07D471K VARISTOR
07D471k
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol
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160-0055X1
Symbol1000
20110307i
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20080527f
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07D391K
Abstract: 07D431K 07D560 mov-07d271 07D471k 07D471K VARISTOR VARISTOR 221K 07D390K 07D241 MOV-07D221
Text: PL IA NT CO M *R oH S 07D2 01K Features Applications • High voltage rating ■ Power supplies ■ High current rating ■ Power systems ■ Bidirectional ■ Line voltage ■ Surge protection ■ Telecom systems ■ Fast response time ■ White goods / appliances
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MOV-07DxxxK
07D391K
07D431K
07D560
mov-07d271
07D471k
07D471K VARISTOR
VARISTOR 221K
07D390K
07D241
MOV-07D221
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07D471k
Abstract: 07D180K VARISTOR 221K 07D151K 07D431K varistor 07d271k
Text: PL IA NT CO M *R oH S 07D2 01K Features Applications • High voltage rating ■ Power supplies ■ High current rating ■ Power systems ■ Bidirectional ■ Line voltage ■ Surge protection ■ Telecom systems ■ Fast response time ■ White goods / appliances
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MOV-07DxxxK
07D471k
07D180K
VARISTOR 221K
07D151K
07D431K
varistor 07d271k
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07D271
Abstract: MOV 471K 07D27 07D680 07d391 07D431 v 14 k 230 varistor mov 751k varistor 07d221k 07D221K
Text: PL IA NT CO M *R oH S 07D2 01K Features Applications • High voltage rating ■ Power supplies ■ High current rating ■ Power systems ■ Bidirectional ■ Line voltage ■ Surge protection ■ Telecom systems ■ Fast response time ■ White goods / appliances
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MOV-07DxxxK
07D271
MOV 471K
07D27
07D680
07d391
07D431
v 14 k 230 varistor
mov 751k
varistor 07d221k
07D221K
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10d471k
Abstract: 10D431K 10D391K 10D241K 10D470K 10D361K 10d271k 10D681K 10D751K 10D621K
Text: PL IA NT CO M 01K *R oH S 10D2 Features Applications • High voltage rating ■ Power supplies ■ High current rating ■ Power systems ■ Bidirectional ■ Line voltage ■ Surge protection ■ Telecom systems ■ Fast response time ■ White goods / appliances
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MOV-10DxxxK
10d471k
10D431K
10D391K
10D241K
10D470K
10D361K
10d271k
10D681K
10D751K
10D621K
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DIODE S4 66
Abstract: smd diode g6 DIODE S4 39 smd diode Diode smd s6 46 SMD MARKING CODE s4 smd diode S6 smd diode code g4 160-0055X1 DIODE marking S4 45 smd diode code g3 marking s4 resistor
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20081126g
DIODE S4 66
smd diode g6 DIODE S4 39 smd diode
Diode smd s6 46
SMD MARKING CODE s4
smd diode S6
smd diode code g4
160-0055X1
DIODE marking S4 45
smd diode code g3
marking s4 resistor
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