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    SMD 10 20U Search Results

    SMD 10 20U Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO Visit Murata Manufacturing Co Ltd

    SMD 10 20U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KL3L07

    Abstract: smd 1f 1f smd transistor SMD Transistor 1f transistor 1f smd
    Text: SHINDENGEN TSS KL Series KL3L07 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive


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    PDF KL3L07 10/1000s, 8/20s, 00V/s KL3L07 smd 1f 1f smd transistor SMD Transistor 1f transistor 1f smd

    KL3Z18

    Abstract: No abstract text available
    Text: SHINDENGEN TSS KL Series KL3Z18 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive


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    PDF KL3Z18 10/1000s, 8/20s, KL3Z18

    KL3Z07

    Abstract: No abstract text available
    Text: SHINDENGEN TSS KL Series KL3Z07 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive


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    PDF KL3Z07 10/1000s, 8/20s, KL3Z07

    KL3N14

    Abstract: SMD Transistor 1f
    Text: SHINDENGEN TSS KL Series KL3N14 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive


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    PDF KL3N14 10/1000s, 8/20s, 00V/s KL3N14 SMD Transistor 1f

    crystal 12mhz

    Abstract: smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz
    Text: Quartz Crystal CSX3 Model 3.2X5 mm Ultra Miniature SMD Crystal Packaging: 12MHz to 45MHz ±10ppm to ±50ppm ±10ppm to ±100ppm ee Fr ad HS t -10°C to 70°C e L Ro plian -30°C to 85°C m Co 5.0pF Max 20uW Typical, 300uW Max ±3ppm Max 1st/yr see table 1


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    PDF 12MHz 45MHz 10ppm 50ppm 100ppm 300uW CSX3-AB1-18-19 25ppm crystal 12mhz smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz

    Untitled

    Abstract: No abstract text available
    Text: Comchip Low Capacitance ESD Protection Diode SMD Diode Specialist CPDQR5V0SP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 ESD ±8kV (Contact) , ±15kV(Air). - IEC61000-4-4 (FET) rating. 40A( 5/50uS) 0.041(1.05) 0.037(0.95) - IEC61000-4-5 (Lightning) rating. 24A( 8/20uS)


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    PDF 0402/SOD-923F IEC61000-4-2 IEC61000-4-4 5/50uS) IEC61000-4-5 8/20uS) 0402/SOD-923F MIL-STD-202 QW-JP025

    Untitled

    Abstract: No abstract text available
    Text: SMD - DETECTOR UV ENHANCED PHOTODIODE FP 20UV50 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 2/99 Features VeryHighShuntResistance Internal Quantum Efficiency near100% pad 1,5x1 Application UV Exposure Meters Spectroscopy Water Purification Fluorescence


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    PDF 20UV50 near100% 254nm) -10mV) 254nm,

    Untitled

    Abstract: No abstract text available
    Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV110 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 6/99 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, Big Active Area Possible pad 1,5x1 Application


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    PDF 20UV110

    Untitled

    Abstract: No abstract text available
    Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV48 MADE IN GERMANY 6/99 Features ALL MEASUREMENTS IN mm Tol.: ±0,10 Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActive Area Possible pad 1,5x1 Application


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    PDF 20UV48 2500C

    47 16 t

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CAPACITORS SMD * Multilayer ceramic capacitors MLCC are manufactured by suspending ceramic powders in liquid and casting into a thin green sheet from 20um in thickness to 5um or thinner. * Metal electrodes are sieved printed onto green sheets which are later stacked to form a laminated are structure. The metal


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    PDF 25max 47 16 t

    vishay 1N4007 DO-214AC

    Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V I S HAY INTERTE C HNOLO G Y, IN C . diodes RECTIFIERS Selector Guide Bridge Rectifiers Fast Recover y Rectifier s Schottky Rectifiers Standard Rectifiers Ultrafast Recover y Rectifiers w w w. v i s h a y. c o m


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    PDF VMN-SG2125-1009 vishay 1N4007 DO-214AC 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF

    he804

    Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
    Text: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs


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    B82432A1682M

    Abstract: B82432-A1824-K 470uH 6A B82432A1472M B82432A1332M B82432-A1684-K B82432A1824K SIMID 02 UKW-DROSSEL B82791-H15-A16
    Text: Partnerschaft mit Siemens RS Components bietet durch eine vertiefte Zusammenarbeit mit Siemens Passive Bauelemente und Röhren eine besondere Dienstleistung an: Als offizieller Schwerpunkthändler liefern wir unseren Kunden alle 2 600 Produkte aus dem Siemens Bauteile Service Katalog SBS-Buch .


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    SN30SC4

    Abstract: D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
    Text: RECTIFIER DIODES Low frequency rectifying Single Diodes M1F 1F Absolute Maximum Ratings Type No. Color Code VRM M1F60 80 D1F20 60 60A D1N20 60 DINF60 D2F20 60 D3F60 D4F60 S2V20 60 S3V20 60 — — — — — — — — — — — — Red Blue Red Blue Tj


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    PDF M1F60 D1F20 D1N20 DINF60 D2F20 D3F60 D4F60 S2V20 S3V20 D1CS20 SN30SC4 D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20

    lm3580

    Abstract: A46 SMD CAPACITOR 470n ne5532 cross LM358D3 78L12 audio splitter, circuit diagram mosfet woofer amplifier schematic diagram of speaker crossover audio amplifier circuit diagram woofer circuit
    Text: ZXCD1000 HIGH FIDELITY CLASS D AUDIO AMPLIFIER SOLUTION DESCRIPTION The ZXCD1000 provides complete control and modulation functions at the heart of a high efficiency high performance Class D switching audio amplifier solution. In combination with custom output


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    PDF ZXCD1000 ZXCD1000 ZXFN1000) lm3580 A46 SMD CAPACITOR 470n ne5532 cross LM358D3 78L12 audio splitter, circuit diagram mosfet woofer amplifier schematic diagram of speaker crossover audio amplifier circuit diagram woofer circuit

    lm3580

    Abstract: 1N4148 SMD PACKAGE AUDIO CROSSOVER schematic A4A smd ne5532 cross 2 speakers 1 crossover amplifier pcb A46 SMD ZXFN1000 a46 smd diode RC4558D
    Text: ZXCD1000 HIGH FIDELITY CLASS D AUDIO AMPLIFIER SOLUTION DESCRIPTION The ZXCD1000 provides complete control and modulation functions at the heart of a high efficiency high performance Class D switching audio amplifier solution. In combination with custom output


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    PDF ZXCD1000 ZXCD1000 ZXFN1000) -115dB 20kHz lm3580 1N4148 SMD PACKAGE AUDIO CROSSOVER schematic A4A smd ne5532 cross 2 speakers 1 crossover amplifier pcb A46 SMD ZXFN1000 a46 smd diode RC4558D

    Untitled

    Abstract: No abstract text available
    Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data


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    PDF CPDVR083V3U IEC61000-4-2 OT-383F MIL-STD-750 OT-383F QW-A7019

    Untitled

    Abstract: No abstract text available
    Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDER12V0U-HF RoHS Device Halogen Free 0503/SOD-723F Features 0.053 1.35 0.045(1.15) - Uni-directional ESD protection - Ultra small SMD package:0503. 0.034(0.85) 0.026(0.65) - High component density. Mechanical data


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    PDF CPDER12V0U-HF 0503/SOD-723F 0503/SOD-523F MIL-STD-750, QW-G7029

    120uh

    Abstract: 208H
    Text: 1. D i m e n s i o n s : 2. S c h e m a t i c : 4 ,3 5 Max oX D D LO o- 1 .8 0 3 .0 3. Electrical Specs: o D o OCL: 1 20uH ±20% 00 DC Res.: 0 .6 6 @ 100KHz, 0.2 5 V OADC O hm s Typ Isat: 0.52Adc Based on 30% dropped in OCL (BOTTOM VIEW) (SUGGESTED PAD LAYOUT)


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    PDF 120uH 52Adc MIL-5TD-202G, UL94-V-0 El51556 -H25T 10D5S 120uh 208H

    Untitled

    Abstract: No abstract text available
    Text: mil Transtek M agnetics ELECTRICAL CHARACTERISTICS: Line Side Inductance: 2.0mH±10% @10KHz,0.1V 1-5 with 2-4 short Leakage Inductance: 20uH Max 100KHz,0.02V 1-5 with 2-4,6,7,8,9 short Chip:Line Turns Ratio: 1CT:3CS±2% @100KHz,50mV DC Resistance: 2.05 OhmsMax 1-4 =2-5 @25°C


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    PDF 10KHz 100KHz 20KHz 400KHz -45dB -70dB 40KHz

    Untitled

    Abstract: No abstract text available
    Text: 1. Mechanical Dimensions: 2 . S ch e m atic: Line Chip 10- -0 8 302 0 - -0 5 4o- 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C 2 .4 9 OCL: Pins 1 - 4 LL: Pins □ □ □ □ _L Cww: 1 -4 Pins 3 m H ±1 0 % 10K H z 0.1V, Tie Pins 2 - 3 20uH


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    PDF 10KHz 100KHz 1975Vac XF0709- AD39S MIL-5TD-202G, UL94V-0 102mm) ULE09M

    Untitled

    Abstract: No abstract text available
    Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : 1 o- 6 o- 2 5 o- - 0 .2 7 0 B 0 .3 6 0 Max ^ r D 4 o- 0 .0 5 0 — I |— i 0.100 o N Ò □□r a o Jo 3. E l e c t r i c a l OCL: 20uH □ □ □ -I DCR: - 0.100 I— .2 0 0 S p e c ific atio n s:


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    PDF MIL-STD-202G. UL94-V-0 E151556 4-125TC 102mm) 100KHz 10MHz 30MHz 50MHz 100MHz

    DIODE 2FL 20U

    Abstract: 2FL 20U
    Text: Super Fast Recovery Diode Single Diode OUTLINE D2FL20U Unit.: mm Package : 2F Weight 0.16jf T yp a y —K v —» 2 0 0 V 1 ,5A ! Feature • /JvSÜSMD • S m all S M D •e y - fx • Low N o ise • trr~35ns • trr-3 5 n s 1 2FL 20U C a th o d e m a rk


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    PDF D2FL20U J532-1) DIODE 2FL 20U 2FL 20U

    diode Marking code v3

    Abstract: 2F SMD CODE MARKING D2FL20U ,diode Marking code v3 smd diode marking code v3 smd diode 2F DIODE smd marking CODE WA smd marking code je SMD MARKING CODE vk smd marking code vd
    Text: Super Fast Recovery Diode mtmm o u t l i n e D2FL20U U nit I mm Package : 2F W eight 0.16g Typ Cathode mark 200V 1,5A Feature • /J ^ S M D • S m a ll S M D • e y - r x • L o w N oise • tr r = 3 5 n s • tr r-3 5 n s 1 2 FL 20U .8 2 Single Diode


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    PDF D2FL20U trr-35ns li50I 56LTI/ j532-1) diode Marking code v3 2F SMD CODE MARKING D2FL20U ,diode Marking code v3 smd diode marking code v3 smd diode 2F DIODE smd marking CODE WA smd marking code je SMD MARKING CODE vk smd marking code vd