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    SMALL SIGNAL GAAS FET Search Results

    SMALL SIGNAL GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SMALL SIGNAL GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KGF1522

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0019-38-71 ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that


    Original     		PDF E2Q0019-38-71 KGF1522 KGF1522

    KGF1521

    Abstract: TA 7286
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0018-38-71 ¡ electronic components KGF1521 ¡ electronic components KGF1521 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1521 is a high-performance GaAs FET small-signal amplifier for L-band frequencies that


    Original     		PDF E2Q0018-38-71 KGF1521 KGF1521 TA 7286

    KGF1531

    Abstract: 0948
    Text: ¡ electronic components KGF1531 ¡ electronic components KGF1531 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L band frequencies that features low-voltage operation, low-current dissipation, high conversion gain,


    Original     		PDF KGF1531 KGF1531 0948

    po111

    Abstract: KGF1521
    Text: ¡ electronic components KGF1521 ¡ electronic components KGF1521 Small-Signal Amplifier for UHF-Band and PCS Freqencies GENERAL DESCRIPTION The KGF1521 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The


    Original     		PDF KGF1521 KGF1521 FEATUR21 po111

    po111

    Abstract: KGF1522 CB 0925
    Text: ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The


    Original     		PDF KGF1522 KGF1522 po111 CB 0925

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    transistor marking E39

    Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.


    Original     		PDF OT-143) transistor marking E39 E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72

    MGF0805A

    Abstract: MITSUBISHI example s band
    Text: < High-power GaAs FET small signal gain stage > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES • High output power Po=36.5dBm(TYP.)


    Original     		PDF MGF0805A MGF0805A, 400mA MGF0805A MITSUBISHI example s band

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES • High output power Po=36.5dBm(TYP.)


    Original     		PDF MGF0805A MGF0805A, 400mA

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION


    Original     		PDF MGF0905A MGF0905A, 65GHz 26dBm 800mA

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION


    Original     		PDF MGF0904A MGF0904A, 65GHz 15dBm 200mA

    KGF1531

    Abstract: D 471 MARKING 3773
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0020-38-71 ¡ electronic components KGF1531 ¡ electronic components KGF1531 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L-band frequencies that features low voltage operation, low current operation, high conversion gain, and low


    Original     		PDF E2Q0020-38-71 KGF1531 KGF1531 D 471 MARKING 3773

    MGF0905A

    Abstract: IDS800
    Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3


    Original     		PDF MGF0905A MGF0905A, 65GHz 26dBm 800mA MGF0905A IDS800

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN


    Original     		PDF MGF0912A MGF0912A, 33dBm

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    Untitled

    Abstract: No abstract text available
    Text: electronic components OKI KGF1531_ Small-Signal Amplifier for UHF-Band and P C S Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L band frequencies that features low-voltage operation, low-current dissipation, high conversion gain,


    OCR Scan     		PDF KGF1531_ KGF1531 KGF1531 DD22B44

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGF1521 Small-Signal Amplifier for JHF-Band and PCS Freqencies GENERAL DESCRIPTION The KGF1521 is a high-perform ance GaAs FET small-signal amplifier for L band frequencies that features low -voltage operation, low -current dissipation, low noise, and low distortion. The


    OCR Scan     		PDF KGF1521 KGF1521 24E40 0022flEb D022f

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGF1522_ Small-Signal Amplifier for UHF-Band and PC S Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The


    OCR Scan     		PDF KGF1522_ KGF1522 and-28 0D22A34 KGF1522 L724240

    Untitled

    Abstract: No abstract text available
    Text: Small Signal GaAs FETs ^.*• ji.' 4 ' * * A * r* * I B It- «fc - • Selection G u id e . 1-2 Alphanumeric Index. 1-4


    OCR Scan     		PDF

    MGF1323

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.


    OCR Scan     		PDF MGF1323 MGF1323, 13dBm 30rnA

    Untitled

    Abstract: No abstract text available
    Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­


    OCR Scan     		PDF MGF1923 13dBm 12GHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1923 ! i TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION The M G F1923, low noise GaAs FET w ith an N-channel Schottky gate, is designed fo r use in S to Ku band ampli­ fiers. The M G F1923 is mounted in the super 12 tape.


    OCR Scan     		PDF MGF1923 F1923, F1923 12GHz 13dBm 12GHz 10rnA

    TA 70/04

    Abstract: No abstract text available
    Text: O K I electronic com ponents KGF1521_ Small-Signal Amplifier for UHF-Band and PCS Freqencies GEN ER A L D ES C R IPTIO N The KGF1521 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The


    OCR Scan     		PDF