SC26P
Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Text: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P
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SC20P
SC40P
SC79P
SC19P
SC12P
SC26P
sm 04
IPA75
sm 4500
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SXG300G
Abstract: 40101B
Text: SXG80G BRIDGE RECTIFIER DATA b Three-Phase Diode Bridges UNIT TYPE Ipc amp» A .N T. T. w 1DC amps A .F Sm/s • FS M T. amps I* t A 2s 25 C 4 5°C T. 25°C 80 68 16 3 85 190 170 SXG120G 100 120 105 205 S X G 1 80G 180 160 205 205 205 SXG21OG 210 1 85 370
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SXG80G
SXG120G
SXG21OG
SXG300G
SXG425G
SXG525G
SXGA620G
SXH640G
SXT670G
40101B
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SM 4c diode
Abstract: No abstract text available
Text: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE U nit in mm V H F -U H F MIXER APPLICATION. • • • + 0 .3 4 5 - 0 -2 Small Package. Sm all Delta Forward Voltage : ¿V p = 20mV Sm all Delta Total Capacitance : ¿sCx = 0.15pF ÖÖ +I MCO M A X IM U M RATINGS Ta = 25°C
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S3275
SM 4c diode
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SM 4c diode
Abstract: diode RA 225 R Am tuning DIODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilico n Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides sotid-state reliability in replacement of mechanical
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MMBV3102LT1
O-236AB)
SM 4c diode
diode RA 225 R
Am tuning DIODE
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Untitled
Abstract: No abstract text available
Text: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH
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bM27525
GG37S23
NDL5071
L5071
operating30
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Untitled
Abstract: No abstract text available
Text: Us-r? □ — Surface Mounting Device —K U type Super Fast Recovery Diode • M B - H im O U T L IN E D IM E N S IO N S DF10LC20U 200V 10A Jo • /// ■ ypwv-i1 R A TIN G S $ Ê Î!Î Î I ^ 5 e !Î& A b s o lu te Maxim um R a tin g s 15# @ ji Item Symbol
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DF10LC20U
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M/ST-10-
Abstract: No abstract text available
Text: DOUGLAS RANDALL, INC Reed Relays- Contact Data Common Specification, Series SG, SM, HP, HPG, HPCG OPERATING DATA Must Operate — 70% Nominal Must Release — 10% Nominal Maximum Voltage Form A & C — 200% Nominal Form B & Latch — 130% Nominal ENVIRONMENTAL DATA
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400VDC
200VDC
1000VDC
110VAC
500VDC
12XMC1A
24XMG1A
12XMG1C
24XMG1C
M/ST-10-
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DS75-08B
Abstract: No abstract text available
Text: |B B j J Rectifier Diodes Avalanche Diodes DS75 DSI75 DSA75 DSAI75 ^FRMS ^FAVM v¥ 1 .Anode vR R U . B R , r f n v’ R S M V on stud V V V 1 ^ •f- on stud - DS75-08B DS75-12B DSI75-08B DSI 75-12B 1300 1760 1950 1200 1600 1800* DSA75-12B DSA75-16B DSA75-18B
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DSI75
DSA75
DSAI75
-DO-203
DS75-08B
DS75-12B
DSI75-08B
75-12B
DSA75-12B
DSA75-16B
DS75-08B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M VL3102T1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tlining Diode M M VL3102T1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
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VL3102T1/D
VL3102T1
OD323
OD-323
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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S60SC3ML
Abstract: SHINDENGEN DIODE
Text: v a 7 •y -o m Schottky Barrier Diode_ Twin Diode o u t l in e d im e n s io n s S60SC3ML Case : MTO-3P 30V 60A ÏS s • T j 15CTC • 1 6 V f = 0 .4 8 V •PnnsM ffl V v i à ï i* • S R B S •D C /D C z i y n - 9 mmm. f/ - u , o a « ü m •a«.
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S60SC3ML
15CTC
S60SC3ML
SHINDENGEN DIODE
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Diode Marking z3 SOT-23
Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Text: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.
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OT-23
to-92
sot-23
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
ZC830
Diode Marking z3 SOT-23
schottky diode marking A7
Y1 SOT-23
marking code X5 SOT23
SOT-23 MARKING w5
X2 marking code sot 23
MARKING X4 SOT23
marking C20 sot-23
sot marking code w7
Z4 SOT23
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diodes ru 4c
Abstract: GH3F RU4A k 300 ru RU4AM gh-3f 4z marking MARKING 2AM diodes ru 1h
Text: l à ai m is LI M l l l l t k i c U S A H E r Fast Recovery Diodes D I ? ? 4 1 DDDD131 b | •Vrm:100~ 2000v bio:0.i~ 4.0A T - £> I ~ £? RU/GH/GU/RP/RS/RH R a t in g / Characteristics V r sm (V V rm (V ) lo (A ) RU 2M 450 400 RU 2A M 650 600 RU 2YX
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DDDD131
20x20>
20X20X
diodes ru 4c
GH3F
RU4A
k 300 ru
RU4AM
gh-3f
4z marking
MARKING 2AM
diodes ru 1h
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Untitled
Abstract: No abstract text available
Text: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R
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74C86N
Abstract: No abstract text available
Text: February 1988 Semiconductor MM54C86/MM74C86 Quad 2-Input EXCLUSIVE-OR Gate General Description Features Em ploying co m plem entary M OS CMOS tra n sisto rs to achieve w ide pow e r supply operating range, low pow e r c o n sum ption and high noise m argin th e se gates provide basic
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MM54C86/MM74C86
74C86N
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TP801
Abstract: No abstract text available
Text: TP801 C 0 4 5 a ^ a ’y h + — : Outline Drawings K SCHOTTKY BARRIER DIODE 4^“ 132 -5 JL , g CD S Î !» 1-Z. 4 11* 0.4 0 2.7 2.54 .¿ s t : Features JEDEC Low V P EIAJ Super high speed sw itchin g. • I M t t « C « * « ftt t f t i l Connection Diagram
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TP801
500ns,
l95t/R89
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ht6026 decoder
Abstract: t60-26 t6026
Text: HOLTEK r r HT6026 Remote Control Encoder Features • • • • • • • O perating voltage: 4V~18V Low stan db y current Low power and high noise im m unity CM OS technology 39 difference codes • Two tran sm issio n w ords m inim um Built-in oscillator needs only 5% resistor
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HT6026
HT6026
F/25V
400kH
ht6026 decoder
t60-26
t6026
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BC327
Abstract: BC328 BC337 BC338 C338 BC327-25
Text: Rating Symbol BC327 BC328 -2 5 Vdc -3 0 Vdc VcEO -4 5 Collector-Base Voltage v CBO -5 0 Emitter-Base Voltage Collector-Emitter Voltage Unit V ë BO -5 .0 Vdc Collector Current — Continuous 'c -8 0 0 mAdc Total Device Dissipation @ Ta = 25”C Derate above 25°C
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BC327
BC328
O-226AA)
BC337,
BC338,
BC337
BC338
C338
BC327-25
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Untitled
Abstract: No abstract text available
Text: LM 63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withlntegrated Fan Control Texas In s t r u m e n t s Literature Number: SNAS190D t í December 2, 2010 LM 63 Sem iconductor 3 3D/33D A c cu ra te R em ote D iode Digital T e m p e ra tu re
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SNAS190D
3D/33D
125SC
2N3904,
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AN-90
Abstract: MM54C86 MM74C86 74L10
Text: February 1988 MM54C86/MM74C86 Quad 2-Input EXCLUSIVE-OR Gate General Description Features Em ploying co m plem entary M OS CMOS tra n sisto rs to achieve w ide pow e r supply operating range, low pow e r c o n sum ption and high noise m argin th e se gates provide basic
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MM54C86/MM74C86
AN-90
MM54C86
MM74C86
74L10
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STTA106U
Abstract: No abstract text available
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 1A V rrm 600V (typ) 20ns V f (max) 1.5V trr FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODEOPERATIONS : FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106U
STTA106
STTA106U
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SMD marking code B21 diode
Abstract: SMD MARKING CODE b21 SMD diode W03 SMD W05 smd diode Coloured band marking code S 4.2B diode smd diode smd marking BBB SMD W05 77 DIODE smd marking Ak DT80
Text: rZ J £ SGS-THOM SON iM M i[L Œ « Q M (ê § T P U x x /S M T H D T x x TRISIL DISCRETE SOLUTION FOR ISDN PROTECTION FEATURES . UNDIRECTIONAL CROWBAR PROTECTION. • PEAK PULSE CURRENT : Ipp = 7 5 A , 1 0 /1 0 0 0 jis . ■ HOLDING CURRENT = 150mA. ■ BREAKDOWN VOLTAGE:
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10/1000us.
150mA.
TPU58/SMTH
TPU80/SMTH
TPU120/SMTH
DT120
CB472.
CB473.
DIL20
T0220AB
SMD marking code B21 diode
SMD MARKING CODE b21
SMD diode W03
SMD W05
smd diode Coloured band marking code
S 4.2B diode smd
diode smd marking BBB
SMD W05 77
DIODE smd marking Ak
DT80
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ZC825 SOT-23
Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V
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ZC800
ZC820
50MHz
C2/C20,
ZC801
ZC821
ZC802
ZC822
ZC825 SOT-23
diode marking w8
marking Z6
ZC803
ZC804
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MSM5839GS
Abstract: 382O z80 9 digit 7 segment display code LCD module 80X2
Text: O K I Semiconductor MSM6262-01_ DOT MATRIX LCD CONTROLLER WITH 48-DOT COMMON DRIVER GENERAL DESCRIPTION The MSM6262GS is a dot matrix LCD controller which is fabricated by OKI's low power consumption CMOS silicon gate technology. In combination with 8 -bit microcontroller, the
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MSM6262-01_
48-DOT
MSM6262GS
MSM5259GS
MSM5839GS.
MSM5839GS
382O
z80 9 digit 7 segment display code
LCD module 80X2
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