DIODE marking Sl
Abstract: SL05 SL24 sl diode SL15
Text: SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient
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DIODE marking Sl
Abstract: DIODE marking L12 TVS DIODE Vbr SL05 SL24 sl diode diode marking code sl TVS 15 Diode 7SL05 marking code L05 SOT 23
Text: SL05 Low Capacitance TVS Diode For High-Speed Data Interfaces thru SL24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com Revised - February 15, 1999 DESCRIPTION The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
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OT-23
DIODE marking Sl
DIODE marking L12
TVS DIODE Vbr
SL05
SL24
sl diode
diode marking code sl
TVS 15 Diode
7SL05
marking code L05 SOT 23
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DIODE marking Sl
Abstract: DIODE marking L12
Text: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient
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DIODE marking Sl
Abstract: SL05 SL24 12v6
Text: SL05 THRU SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient
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DIODE marking L12
Abstract: SL05 SL24 DIODE marking Sl
Text: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient
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rSL05
DIODE marking L12
SL05
SL24
DIODE marking Sl
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SL05
Abstract: SL24 SL05.TCT
Text: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient
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DIODE marking Sl
Abstract: SL15.TCt
Text: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LN41YPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage
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LN41YPSLX
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LN31GPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage
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LN31GPSLX
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mp4012
Abstract: No abstract text available
Text: MP4012 High-Brightness, High-Current Accuracy WLED Controller The Future of Analog IC Technology DESCRIPTION FEATURES The MP4012 is a current mode controller designed for driving the high brightness Light Emitting Diodes LEDs from extremely wide input voltage 8V~55V. It can be used in Boost,
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MP4012
MP4012
MS-012,
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diode SR 34
Abstract: CD pickup laser diode sony CD Laser pickup SLD104AV sr pcd power
Text: SLD104AV GaAlAs Laser Diode Description The SLD104AV is a low noise GaAlAs laser diode developed for CD. M-260 Features • High temperature operation • Low noise • Small package φ 5.6 mm Applications • Pickup for CD players Structure • GaAlAs double hetero structured laser diode
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SLD104AV
SLD104AV
M-260
diode SR 34
CD pickup laser diode
sony CD Laser pickup
sr pcd power
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SLD104AV
Abstract: low noise, 780 nm, 7 mw CD pickup laser diode
Text: SLD104AV GaAlAs Laser Diode Description The SLD104AV is a low noise GaAlAs laser diode developed for CD. M-260 Features • High temperature operation • Low noise • Small package φ 5.6 mm Applications • Pickup for CD players Structure • GaAlAs double hetero structured laser diode
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SLD104AV
SLD104AV
M-260
low noise, 780 nm, 7 mw
CD pickup laser diode
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SLD104U
Abstract: SLD104AU SLD-104U M259
Text: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply
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SLD104AU
SLD104AU
SLD104U,
M-259
SLD104U
SLD-104U
M259
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN41YPSLX Round Type φ5.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current
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2002/95/EC)
LN41YPSLX
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c1247
Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
ST1603A
c2079
MCT210
MCT210-Specified
E90700)
10TTI
c1247
C1246
c1252
Phototransistor with base emitter
CI242
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Untitled
Abstract: No abstract text available
Text: B u lle tin 12037 Internatiçnal E S Rectifier 4 sl R , 1 s e r ie s sok / l / k s (R) STANDARD RECOVERY DIODES Stud Version Features 150 A • Alloy diode ■ High current carrying capability ■ High voltage ratings up to 1000V ■ High surge current capabilities
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SL 100 NPN Transistor
Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE
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THC-2484
THC-4123
THC-4124
THC-4125
THC-4126
THC-40D4
THC-40D5
THC-41D4
THC-41D5
SL 100 NPN Transistor
bc337-40 npn transistor
transistor TE 901
Transistor BC239c
SL 100 power transistor
of transistor sl 100
Transistor BC413C
TRANSISTOR SL 100
te 901 pnp Transistor
sl 100 transistor
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SLC11
Abstract: slce8 SLCE15A transient supressor-diode SLC10 SLC10A SLC11A SLC90 SLCE10A SLCE11
Text: SENICON CONPONENTS INC 2flE D 0135157 Q0G0fl03 r - t i - 2 -3 7 SILICON TRANSIENT SOR DIODES DESCRIPTION This specification sheet defines a series of low-capacitance silicon transient suppressors for the protection of A C signal lines. This series employs a standard suppressor in series
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Q0G0fl03
isE110A
SLCE120
SLCE120A
SLCE130
SLCE130A
SLC150
SLC150A
SLC160
SLC160A
SLC11
slce8
SLCE15A
transient supressor-diode
SLC10
SLC10A
SLC11A
SLC90
SLCE10A
SLCE11
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HE8807CL
Abstract: XP20W
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL
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HE8807SG/SL/CL/FL
HE8807SG/SL/CL/FL
HE8807SL/CL/FL)
HE8807SG)
HE8807SG
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807CL
XP20W
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Untitled
Abstract: No abstract text available
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The H E8807SG /SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity H E8807SL/CL/FL
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HE8807SG/SL/CL/FL
E8807SG
E8807SL/CL/FL)
E8807SG
HE8807SG:
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807SG)
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Untitled
Abstract: No abstract text available
Text: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode thru SL24 TEL805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over
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TEL805-498-2111
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Untitled
Abstract: No abstract text available
Text: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode th ru SL24 TE L805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over
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L805-498-2111
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Untitled
Abstract: No abstract text available
Text: _ ? ^ r i U JJ|^ l T r P Today’s Results.Tomorrow1! Vision I I •■ Revised - February 15, 1999 Low Capacitance TVS Diode For High-Speed Data Interfaces TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SL series of TVS arrays are designed to protect
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TEL805-498-2111
OT-23
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SL 100 NPN Transistor
Abstract: T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC
Text: e TRANSYS BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE m CTKONICS LIM IT E D Designed Specifically for High Frequency Electronic Ballasts D PACKAGE TOP VIEW Integrated Fast trr Anti-parallel Diode, Enhancing Reliability B l= Diode trr Typically 500 ns
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BULD25D,
BULD25DR,
BULD25SL
T0220
SL 100 NPN Transistor
T1 SL 100 NPN Transistor
TRANSISTOR sl 100
sl 100 transistor
of transistor sl 100
"Safe Operating Area and Thermal Design" silicon
BULD25DR
sl diode
NPN transistor Electronic ballast
BULD125KC
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