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    SL 0565 R Search Results

    SL 0565 R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSS1210-565 Coilcraft Inc Power inductor, shielded, 10/20% tol, SMT, RoHS Visit Coilcraft Inc
    MSS1210-565KE Coilcraft Inc Power inductor, shielded, 10/20% tol, SMT, RoHS Visit Coilcraft Inc
    LPS5030-565MLB Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc Buy
    LPS5030-565MLC Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc Buy
    MSS1210-565KED Coilcraft Inc General Purpose Inductor Visit Coilcraft Inc

    SL 0565 R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ASM 1042

    Abstract: ARM250 UUA 2224 ARM v7 ARM6 ARM7 ARM7DMI E5940 ARM7 arm6 0040DJ-00 embedded c programming examples
    Text: MICROCOMPUTER ARM ARM プログラミング マニュアル Pub.No.ARMDUI0040DJ011-00 MS-DOSは米国マイクロソフト社の登録商標です。 WindowsWindowsNTは米国マイクロソフト社の商標です。 PanaXSeriesは、松下電器産業株式会社の商標です。


    Original     		ARMDUI0040DJ011-00 0040DJ-00 0040DJ-00) 0041CJ-00) typ-0835 ASM 1042 ARM250 UUA 2224 ARM v7 ARM6 ARM7 ARM7DMI E5940 ARM7 arm6 0040DJ-00 embedded c programming examples PDF

    RK618

    Abstract: LOCTITE 3623 S-CH00-0157-002 DBAS 970 25 35 PN 059 ANSI-MC-96 LOCTITE 3542 M27500A22 NES 1004 naval specification SP 107156 souriau 8611
    Text: Wire and Cable, Harnessing and Protection Products Table of Contents Tyco Electronics Embraces the Most Valued Brand Names Worldwide ……………………………ii About Raychem Wire and Cable, Harnessing and Heat-Shrinkable Products ………………………iii


    Original     		PDF

    X04020

    Abstract: bc540 MN101D01 NT 12176 PC 12109a 3-2-25P64 PAL 010a MN101D02D 3-2-24P60P63 osc48
    Text: M IC R O C O M P U T E R M N 101D00 MN101D02D/02E/02F/ 02G/02H LSI 説明書 Pub.No.21502-031 PanaXSeriesは松下電器産業株式会社の商標です。 その他記載された会社名及びロゴ、製品名などは該当する各社の商標または登録商標です。


    Original     		101D00 MN101D02D/02E/02F/ 02G/02H LSIMN101D02XCPU 41/2TM4IO TM4MDTM4CK20fosc fs/16 4-2-84TM4BC MN101D00 MN101D00LSI X04020 bc540 MN101D01 NT 12176 PC 12109a 3-2-25P64 PAL 010a MN101D02D 3-2-24P60P63 osc48 PDF

    TLR143

    Abstract: TLUR143 TLR113A TLR113 TLR144 TLRA134A TLRA155BP TLRC180AP EBR5305S TLS144
    Text: 15 £ ï * ft fi 7 •ff- BR5385X PR5385X # itî « ¡« ¡Ä 18* deg. ; 7 . = 25‘C T.= 25C'1 # > x>- /i I y 'm A' Vf If !V ■ ' :mA¡ m r± m ;m A ; ;V : ■*C' 140 660 6 20 1.7 20 50 4 —30 —85 79 Flat Top 140 700 0.9 10 2.1 10 30 4 —30 —85 79


    OCR Scan     		BR5385X PR5385X VR5385X EBR5304S PR5304S EVR5304S VR5304S EBR5334S PR5334S EVR5334S TLR143 TLUR143 TLR113A TLR113 TLR144 TLRA134A TLRA155BP TLRC180AP EBR5305S TLS144 PDF

    BA1A4M-T

    Abstract: BA1A4M 3773A T108 ptc T108 t0429
    Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]


    OCR Scan     		PWS10 CycleS50 i0992 BA1A4M-T BA1A4M 3773A T108 ptc T108 t0429 PDF

    MT460

    Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
    Text: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E


    OCR Scan     		PWS10 SXISC06) MT460 TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429 PDF

    2SC3734

    Abstract: odv marking
    Text: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m


    OCR Scan     		2SA14611 2SC3734 odv marking PDF

    L0742

    Abstract: L0742 81 MPA1452H TL08 T460 IC-6338 093L
    Text: SEC j m = f T / x r x m 'ê r y < r7 - b ^ X ^ C o m p o u n d P o w e r T ra n s is to r A / N P N l t ° ^ + '> 7 ; ^ / P ij = l > Ï '> A 1 4 5 2 H U>{ I i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use DC —DC 3 > / < — 9 •V U / 4 Y ■* - ? • U u - • 7 > 7 ° t c


    OCR Scan     		MPA1452H 13X26X4 L0742 L0742 81 MPA1452H TL08 T460 IC-6338 093L PDF

    SKs TRANSISTOR

    Abstract: 2SK661 00GE GE 6226
    Text: NEC iïf/ÿfx Ju n ctio n Field Effect Transistor 2SK661 E C M 'O h i m m m ¥ fi:m m m 2. 9 ± 0. 2 l l +0'2 1. 90 i - i -o .i o g m 0.8 o r - 0.45- -0 .4 5 M W . i k A $ $ < 7 ) A L h ± t f ») HR Z l ï S i l j II *& K v 'f > • y - x IS U K *f — h


    OCR Scan     		2SK661 Effl85-3Ã SKs TRANSISTOR 2SK661 00GE GE 6226 PDF

    UPD74HC08

    Abstract: lt 420 sf 50 gg FE8B
    Text: SEC M o s s i im s s M O S In te g ra te d C ircu it iiT / \ f 7 PD74HC08 QUAD 2 -IN P U T AND G A TE mo c s jii iit m U ¿ 0 - 5 1 t L T H fiP S? tl/tQ U A D 2 -IN P U T AND r - K ^ P D 7 4 H C 0 8 ii, M C M O S n y . y ; 7 r i y •9L S T T L ' j a ^ r -


    OCR Scan     		uPD74HC08 /iuPD74HC08C /iuPD74HC08G uPD74HC08G-T1 lt 420 sf 50 gg FE8B PDF

    pj 0266

    Abstract: SC5027 RD110P rd100p jb 5531 RD51P SC-62 EIAJ Q A 66 SC-5027B RD12PB RD47P
    Text: Æ W Æ y - f * - K Zener Diodes RD120P RD2.0P RD 2.0P—RD120P ¡ ± ^ § « ^ * '‘1 - * W t ë E l T O : mm K T 't o m i ì ' M ru • ■ / K ic , ' m & ï ï & n g m r - ' t v - 1.5 ±0.1 î /U K m g r - W U S ' J ' ^ l f c L f c t m - C l - . 4#


    OCR Scan     		RD120P SC-62 SC-5027B HK0888 32-iS 29-il- 354-K IMK09 pj 0266 SC5027 RD110P rd100p jb 5531 RD51P SC-62 EIAJ Q A 66 RD12PB RD47P PDF

    diode e5f

    Abstract: 2SK827 TL08 T108 Scans-0088188
    Text: M O S Field E ffe c t P o w e r T r a n s is t o r MOS FET n m 2 S K 827 ü , m m fi& < , N x f t i w i , x > A > >r •/ f - > x / n > r h a m M O S > , is js m x ^ F E T v ^ > > r * T O , : mm) 0 3 .2 ± 0 .2 D C -D C a 15.7 MAX. 4 . 7 M AX. Z 1.5


    OCR Scan     		2SK827 diode e5f 2SK827 TL08 T108 Scans-0088188 PDF

    transistor A916

    Abstract: YC07 2SA916 A916 transistor
    Text: Ml ^ _h >u fry N IH ph * an O f * u $ £ a c 3i w FFI FFI FH •ft H*"* p < C< O O s 2 *? / <T> Vr C" C~ 4 * m m pi m ps pif sr sr > < 7] M C O 03 CD O w s O m cjn BA tSD h-H o""1 < < O 0C< O II 11 M II II 1 1 N5 1 1 1 C O tO ]. O 3 3 < < > > < , , , , 1—1 1—1 HH


    OCR Scan     		2SA916 2SC194U transistor A916 YC07 2SA916 A916 transistor PDF

    L46R

    Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
    Text: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l


    OCR Scan     		uPA607T PA606T l--62 B484S± L46R 96 mfu DIODE HR 8665 PA607T 4N51 5M1E 328l PDF