Untitled
Abstract: No abstract text available
Text: SKN 45 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 V22 A22 0Z22 0V22 3 V22 A22 0Z22 0V22 >BC VW¥2V >BC VW¥2A >BC VW¥0Z >BC VW¥0V =MG3 R VW G P 6:X 0A2Y ;7 R 0ZW [JT >B$ VW¥2V >B$ VW¥2A >B$ VW¥0Z >BC VW¥0V 0122 0122 >BC VW¥01
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120h0D
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Semikron SKR 71
Abstract: SKN71/12 diode SKN SKN45/04 skn71 SKN7108 diode skn 5/ 08 semikron diode skn 71 semikron rc SKN*70/02
Text: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 80 A 150 A 50 A (118 °C) SKN 45 SKN 70 SKN 71 IFAV (sin. 180; Tcase = . . .) 95 A (100 °C) SKR 45 SKR 70 SKR 71 V 200 400 800 1200 1400 1600 SKN45/02 SKN45/04 SKN45/08 SKN45/12 SKN45/14
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SKN45/02
SKN45/04
SKN45/08
SKN45/12
SKN45/14
SKN45/16
SKR45/02
SKR45/04
SKR45/08
SKR45/12
Semikron SKR 71
SKN71/12
diode SKN
SKN45/04
skn71
SKN7108
diode skn 5/ 08 semikron
diode skn 71
semikron rc
SKN*70/02
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skn diodes
Abstract: Semikron SKR 71 semikron skn 70/12 semikron SKN 71 diode skn 71 SKN 71/04 SKR 71/04 Semikron SKR 40 /12 semikron SKR 45 SKR 50 semikron skn 50
Text: VRSM Rectifier Diodes IFRMS maximum values for continuous operations VRRM 80 A 150 A SKN 45 SKN 70 SKN 71 IFAV (sin. 180; Tcase = .) 50 A (118 °C) 95 A (100 °C) V 400 SKN 45/04 SKR 45/04 SKN 70/04 SKR 70/04 SKN 71/04* SKR 71/04* 800 SKN 45/08 SKR 45/08 SKN 70/08 SKR 70/08 SKN 71/08* SKR 71/08*
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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D2BS
Abstract: No abstract text available
Text: S E M IK R D N V rsm V rrm If a v 200 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 SKN 2,5 Symbol Conditions T Vj = 2 5 °C = = = 1 8 0 °C T Vj i2t T vj Tvj Vf V TO rr 2 ,5 120 2 ,4 10 ms
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SO-16*
SKR20
SO-31
SKR26
S0-10
D0-203
D2BS
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Untitled
Abstract: No abstract text available
Text: SEMIKRON INC 3bE D • fll3bh71 OOGStiST 2 « S E K G SEMIKRON Ifrm s maximum values fo r continuous operation V rsm 5A V rrm | I f a v (sin. 10A SKN 2,5 SKN 5 180;Tamb = 45 °C) V 2,5 A 5A 200 400 800 1200 1600 SKN 2,5/02 SKN 2,5/04 SKN 2,5/08 SKN 5/02
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fll3bh71
fll3bb71
013bb71
SKN20
SO-31
SO-10
DO-203
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Untitled
Abstract: No abstract text available
Text: SKN 5 • f RMS” 2 0 ^ * SKN 5/04 SKN 5/08 SKN 5/12 SKN 5/16 V r sm 400 V 800 V 1200 V 1600 V V rrm 400 V 800 V 1200 V 1600 V I fav Tomb 5A 45 °C, sin. 180°el = 20 A I frm s I fav I fsm (Tomb (Tvi = = 4,8 A 45 °C, rec. 120 °el) 190 A 25 °C) 160 A
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Untitled
Abstract: No abstract text available
Text: SEUIKRON INC GbE D | Ô13bb71 OGD1EDÛ Ô | T - Rectifier Diodes Types Gleichrichterdioden V rsm If r m s 57 1S V 1N4002 1N4004 1N4006 1N4007 1002 400 800 1000 S N 113 1600 SKE SKN /16 6/01 /04 /OS /10 100 400 800 1000 /12 SK mA mQ °C 302> 4,5 8,3 ms, 175°C)
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13bb71
1N4002
1N4004
1N4006
1N4007
DO-205AC
DO-30
DO-205
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SKR 170/04
Abstract: SKN 170 SKN 170/08 skr170
Text: SKN 170/SKR 170 ' frms = 350 A; lF A V= 220 A S K N 170/04 S K R 170/04* S K N 170/08 S K R 170/08* S K N 170/12 S K R 170/12* S K N 170/14 S K R 170/14* S K N 170/16 S K R 170/16* V rsm 400 V 800 V 1200 V 1400 V 1600 V V rrm 400 V 800 V 1200 V 1400 V 1600 V
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SKN45/06
Abstract: No abstract text available
Text: s e MIKRON Rectifier Diodes Ifrms maximum values for continuous operation 80 A | 150 A Vrsm Vrrm fav 50 A (118 °C) V $ $ SKN 45 SKN 70 SKN 71 (sin. 180; Tease = •• ■) 95 A (100 °C) $ $ $ SKR 45 SKR 70 SKR 71 200 SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02*
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SKN45/02
SKR45/02
SKN70/02
SKR70/02
SKN71/02*
SKR71/02*
SKN45/04
SKR45/04
SKN70/04
SKR70/04
SKN45/06
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SKR 870
Abstract: SKN870 DIN41814
Text: s e MIKRO n Rectifier Diodes Ifa v sin. 180; Tease = 85 =C V rsm V rrm 500 A V 400 800 — - 720 A 1110 A SKN 501/04 SKN 501/08 SKN 501/12 SKN 501/14 SKN 501/16 SKN 870/04 - SKN 870/12 1200 - 1400 1600 - 1800 SKN 450/18 SKN 450/20 SKN 450/22 SKN 450/24 SKN 450/25
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107B2
DO-200
SKR 870
SKN870
DIN41814
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Untitled
Abstract: No abstract text available
Text: Section 9: Fast Rectifier Diodes Type VflRM If a v It-RMS §> I fsm i2t trr C ase 10 m s 2 5 "C 10 m s 25 C m ax. 25 C see page C A A ZS ns Tcaw s in . 180 V rsm 11 ▲ New Type V A A SKN 2 F 17 SKR 2 F 17 4 0 0 . 1000 41 17 11 3 450 1000 150 SKN 3 F 20 SKR 3 F 20
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Untitled
Abstract: No abstract text available
Text: sem ikro n V rsm Ifa v Rectifier Diodes sin. 180; Tease = 85 >C SKN 450 SKN 501 SKN 870 V rrm 500 A V 400 - 800 - 1200 - 1400 - 1600 - 1800 SKN 450/18 SKN 450/20 SKN 450/22 2000 2200 2400 Ifsm i2t Qrr Irm Ir sin. 180; DSC; (Tease = . . .) = 25 °C; 10 ms
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SKN 50/08
Abstract: skn 50/04 skn 50/12 SKR 50 SKR 50/08 skn 50/16 SKR 50/12 SKN 170 SKR 1200 SKR50
Text: SKN 45/SKR 45, SKN 50/SKR 50 SKN SKR SKN SKR 45/04 45/04 50/04 50/04 SKN SKR SKN SKR SKN SKR SKN SKR 45/08 45/08 50/08 50/08 45/12 45/12 50/12 50/12 •frms- 80 A ; lFAV SKN 45/14 SKR 45/14 SKN 50/14 SKR 50/14 SKN SKR SKN SKR 45/16 45/16 50/16 50/16 V rsm
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Heatsink For stud devices - Semikron
Abstract: DQ-203 SKR2616 Semikron SKR 26 /02
Text: SKN 26 V rrm V V 400 400 SKN 26/04 lFAV = 25 A sin. 180 800 800 SKN 26/08 SKR 26/08 1200 SKN 26/12 SKR 26/12 1400 1400 SKN 26/14 SKR 26/14 1600 1600 SKN 26/16 SKR 26/16 Symbol Conditions 'fav sin. 180; T c = 100 °C 'fsm i2t SKR 26 A K 9; Ta = 45 °C; B2 / B6
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DQ-203
Heatsink For stud devices - Semikron
SKR2616
Semikron SKR 26 /02
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SKN 45/08
Abstract: No abstract text available
Text: ^FRNIS OO Aj I fav 4 5 A SKN4F45 SKN 4 F 45/02 SKN 4 F 45/04 SKN 4 F 45/06 SKN 4 F 45/08 V rsm 200 V 400 V 600 V 800 V 1000 V V rrm 200 V 400 V 600 V 800 V 1000 V I fav T Case 45 A ~ 90 °C, sin. 180 °el 80 A I frm s Ifav I fsm K5 K3 K 1,1 (sin. 180 °el)
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SKN 21
Abstract: No abstract text available
Text: SKN 2,5 , FRMS“ SKN 2,5/04 SKN 2,5/08 SKN 2,5/12 ', O A » 'FAV - 2 SKN 2,5/16 V rsm 400 V 800 V 1200 V 1600 V V rrm 400 V 800 V 1200 V 1600 V Ifav Tomb = 45 °C, sin. 180 °el 2,5 A 10 A I frm s = 45 °C, ree. 120 °el) 2,4 A Ifav (T a m b I fsm (Tv¡ = 25 °C)
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varistor SKVA 20 B 550
Abstract: semikron skvc 20 a 130
Text: s e MIKRDn 14.6 Metaloxide ZnO Varistors Types Vv V dc V DC + 10% max. max. (b e = 1 mA) T 1)2) 'p ip 1»3 » Wp1>3> P av max. max. max. max repetitive nonrepetitive A Tamb - 150 4500 24,6 0,6 150 4500 30,1 0,6 200 6500 79,3 1,0 150 4500 64,5 0,6 420 150
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SKN+26/04
Abstract: No abstract text available
Text: 51E D • âl3bb?l 0GG3T17 3T4 « S E K Û 5EMIKR0N SEMIKRON INC 41 A | Ifav sin. 1 8 0 ; T case 26 trr = V 400 Fast Recovery Rectifier Diodes —p Ifrms (maximum values for continuous operation V rsm V rrm A 150 ns SKN2F17/04 SKN 2 F 17/04 UNF SKN 2 F17/06
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0GG3T17
SKN2F17/04
F17/06
SKN2F17/08
SKN2F17
SKN3F20
SKR2F17
SKR3F20
SKR2F17/04UNF
SKR3F20/06
SKN+26/04
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Fast Recovery Rectifier Diodes Ifrms maximum values for continuous operation 41 A V rsm V rrm Ifav (sin. 180; T e a s e = 85 °C) 26 A trr = 150 ns V $ SKR 2 F 17 SKR 3 F 20 $ $ 400 SKN 2F17/04 SKN 2F17/04UNF 600 SKN 2F17/06 SKN 2F17/06UNF 800 SKN 2F17/08
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2F17/04
2F17/04UNF
2F17/06
2F17/06UNF
2F17/08
2F17/08UNF
2F17/10
2F17/10UNF
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SKNA4
Abstract: No abstract text available
Text: se MIKROn V rsm Rectifier Diodes Ifrm s maximum values for continuous operation V rrm 5A 10 A V 2,5 A 5A | SKN 2,5 SKN5 Ifa v (sin. 180; Tamb —45 °C) 200 - SKN 5/02 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16
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fll3bb71
00Gb310
SKNA4
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Semikron SKR 21
Abstract: No abstract text available
Text: s e MIKRO n V rsm Ifrm s V rrm Fast Recovery Rectifier Diodes maximum values for continuous operation 120 A Ifa v (sin. 180; Tcase = 85 °C) 75 A trr SKN 60 F = 700 ns $ V 1200 SKN 60 F 12 SKR 60 F 12 1400 SKN 60 F 14 SKR 60 F 14 1500 SKN 60 F 15 SKR 60 F 15
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000b3b4
fll3bb71
fil3bb71
Semikron SKR 21
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Untitled
Abstract: No abstract text available
Text: SENIKRON INC DbE D | ûl3bb?l GDGiaiD b | 7 "~ O f - Rectifier Diodes TVpes 1\ Gleichrichterdioden Vrsm Vrrm If r m s V A A Ifav Ifav Tease Tease =125°C = 100°C I 7 A 2- / Diodes redresseuses VF Ir 25 °C. It Tvjmax. Tv, max. Rtheh If V(TO) Tvjmax. Rthje
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P1/120
2xP8/180
2xP8/180F
l2xP8/180F
2xP9/210F
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V hsm Ifrm s maximum values for continuous operation V rrm 100 A Fast Recovery Rectifier Diodes ÌFAV (sin. 180; Tease = • •• ) 50 A (105 °C) | SKN 2 F 50 SKR 2 F 50 50 A (95 °C) tri = 200 ns $ V $ 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04
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180/rec
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