SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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SKM 40 GD 121 D
Abstract: SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d
Text: 6 0,75$16 ,*%7 0RGXOHV ,QVXODWHG *DWH %LSRODU 7UDQVLVWRU 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 026 LQSXW YROWDJH FRQWUROOHG )UHTXHQF\ FRQYHUWHUV IRU $& PRWRU GULYHV 1 FKDQQHO '& VHUYR DQG URERW GULYHV /RZ VDWXUDWLRQ YROWDJH VHULHV DYDLODEOH
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1371RQ
SKM 40 GD 121 D
SKM 40 GD 101 D
skm 40 gd 121
skm 200 gb 122 d
skm 75 gb 101 d
skm 150 gb 122
SKM 25 GD
IGBT cross reference semikron skm 40 gd 121
SKM 300 GA 102 D
Semitrans M SKm 100 ga 121 d
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Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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SKM 75 GAL 123 IGBT
Abstract: SKM 75 GB 123 SKM 380 skm 50 gb 100 d Semitrans* IGBT GAL 200 gb
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = 25/80 °C
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Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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SKM 75 GAL 123 IGBT
Abstract: SKM 600 gb skm 40 gb 123 d
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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SKM 75 GAL 123 IGBT
Abstract: skm 200 GB 12 V SKM 300 GB 12 V semikron skm 300 gar 123 SKM 300 CIRCUIT GAL 200 gb semikron skm 150 gal skm 125 ga 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C
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SKM 75 GB 123
Abstract: semikron skm 150 gal SKM 75 GAL 123 IGBT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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skm 200 GB 12 V
Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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semikron skm 150 gb 123
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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Semitrans M SKD 100 GAL
Abstract: skm 50 gd 123 d SKM 75 GAL 123 IGBT SKM 25 GD semikron skd 60 Semitrans M SKD diode for piv 11v Semitrans inverter rectifier ic 747 skm 50 gb 100 d
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) 1200 1200 100 / 90 200 / 180 ± 20 per IGBT/D1/D8, Tcase=25 °C 690 / 125 / 125 – 40 . . .+150 (125) AC, 1 min.
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752tic
Semitrans M SKD 100 GAL
skm 50 gd 123 d
SKM 75 GAL 123 IGBT
SKM 25 GD
semikron skd 60
Semitrans M SKD
diode for piv 11v
Semitrans inverter rectifier
ic 747
skm 50 gb 100 d
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zvs zcs induction heating igbt
Abstract: semikron SKm 123D semikron SKm 50 GB 123D 123d transistor high frequency welder circuit diagram LB 124D skm 200 123d transistor SKM 75 GB 123D 124d transistor 123D
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100 4)
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700
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SKM 75 GAL 123 IGBT
Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment
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GA123
GB123
GB173
SKM300GB
SKM 75 GAL 123 IGBT
SKM 300 CIRCUIT
GB-123
skm 50 gd 123 d
1700V-Types
GAL 700
SKM 25 GD
SKM100GB173
skm400
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semikron SKm 123D
Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment
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GA123
00GA163D
fll3bb71
semikron SKm 123D
semikron SKm GAL 123D
SEMIKRON SKM 100 GAL 123D
semikron SKm 50 GB 123D
semikron skm 150 gb 123
skm 50 gd 123 d
skm 22 gal 123
SKM 75 GB 123D
semikron skm 40
skm 40 gb 123 d
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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semikron SKm GAL 123D
Abstract: CASED61
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm
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SKM 600 gb
Abstract: Semitrans skm 75 gb 100 SKM 300 CIRCUIT SKM 200 APPLICATION skm 100 gb 101 d SKM 195 Gb 123 IGBT 838102 SKM 75 GB 123 iran
Text: 5EMIKR0N innovation + service take your pick there is a p e rfe ct fit fo r your a pp lica tio n rugged easy paralleling short c ircu it p ro of lo w sw itch in g losses 1 2 6 series: SEMITRANS Trench IGBT 1 2 8 series: SEMITRANS SPT IGBT o chips ^ package
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms
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Semikron SKM 173D
Abstract: SK 200 GAR 125 SKM200GB173 B679
Text: s e m ik r o n Absolute Maximum Ratings S ym bol VcES VcGR lc ICM V a lu e s C o nd itions 1 U nits 1700 1700 2 2 0 /1 5 0 440 / 300 ±20 1250 - 4 0 . . .+150 125 4000 Class F 55/150/56 Rqe = 20 k ii Tease = 25/80 °C Tease ~ 25/80 °C; tp = 1 ms Vges Ptoi
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75AFC
Abstract: L56A b644 us25x
Text: s e m ik r d n A b s o l u t e M a x im u m R a t in g s Sym bol C onditions ' V ets VcGR lc IcM R ge = 20 k ii Tcase= 25/80 °C Tcase= 25/80 °C; tp — 1 ms V ges Ptot per Tj, Tag Visoi humidity climate IGBT, Tcase= 25 °C AC, 1min. D1N 40 040 DINIEC68T.1
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DINIEC68T
se--25/80
B6-46
75AFC
L56A
b644
us25x
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skm150gb123d
Abstract: semikron IGBT 100A SKM 75 GAL 123 IGBT SKM150GB123
Text: SEMI KRÖN Absolute Maximum Ratings Sym bol VcES VcGR lc V a lu e s C onditions 1 Units 1200 1200 150 '100 300 / 200 ±20 800 - 4 0 . . .+150 125 2 500 7) Class F 55/150/56 Rge = 20 k£i Tease = 25/80 X Tease = 25/80 X ; tp = 1 ms ICM Vges Plot T|, (Tjtg)
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IEC68T
SKM150GB123D
semikron IGBT 100A
SKM 75 GAL 123 IGBT
SKM150GB123
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Semitrans M SKD 100 GAL
Abstract: b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT
Text: s e MIKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tag Visol humidity climate Diodes 9) If IfM= - ICM Ifsm l2t Values Conditions ' Units Rge = 20 kQ Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min.
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m100gb12
xls-24
Semitrans M SKD 100 GAL
b6u 500 semikron
SKD100
GAL 16 v 8 D DIP
SKM 75 GAL 123 IGBT
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