Untitled
Abstract: No abstract text available
Text: SKM 75 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Abstract: No abstract text available
Text: SKM 75 GB 128 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\75g
b128dn
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skm 50 gb 100 d
Abstract: No abstract text available
Text: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
skm 50 gb 100 d
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SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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semikron skm 75gb
Abstract: 9M07
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 600 600 100 / 75 200 / 150 ± 20 350 –40 . +(125) 150 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 75 / 50 144 / 100 ± 20 500 – 40 . . .+150 125) 4000 Class F 55/150/56 V V A A V W °C V 8) Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
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semikron IGBT 75a 600v module
Abstract: No abstract text available
Text: SKM 100 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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skm 75 gb 100
Abstract: No abstract text available
Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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NPT-IGBT SKM
Abstract: skm 50 gb 100 d
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 600 600 100 / 75 200 / 150 ± 20 350 –40 . +(125) 150 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 75 / 50 144 / 100 ± 20 500 – 40 . . .+150 (125) 4000 Class F 40/125/56 V V A A V W °C
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Abstract: No abstract text available
Text: SKM 100 GB 128 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\100
GB128
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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Untitled
Abstract: No abstract text available
Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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Untitled
Abstract: No abstract text available
Text: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C
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l3bb71
DG03bb5
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SKM 75 GAL 123 IGBT
Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment
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GA123
GB123
GB173
SKM300GB
SKM 75 GAL 123 IGBT
SKM 300 CIRCUIT
GB-123
skm 50 gd 123 d
1700V-Types
GAL 700
SKM 25 GD
SKM100GB173
skm400
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skm 75 gb 101 d
Abstract: skm 100 gb 121d skm 75 gb 101d SK 50 GAL 065 75GB101D SK 200 GAR 125 skm 75 101 SEMIKRON SKM 22 GAL 121D
Text: s e MIKRDN Absolute Maximum Ratings Symbol Conditions 1 VcES VcGR lc ICM V ges Rge = 20 kQ Tease — 25/80 °C Tease = 25/80 °C Ptot Tj, Tstg V ¡so! humidity climate Values . 101 D 1000 1000 . 121 D Units 1200 1200 V V A A V I 75/50 150/100 ±20 500
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SKM75
skm 75 gb 101 d
skm 100 gb 121d
skm 75 gb 101d
SK 50 GAL 065
75GB101D
SK 200 GAR 125
skm 75 101
SEMIKRON SKM 22 GAL 121D
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semikron SKm 123D
Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment
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GA123
00GA163D
fll3bb71
semikron SKm 123D
semikron SKm GAL 123D
SEMIKRON SKM 100 GAL 123D
semikron SKm 50 GB 123D
semikron skm 150 gb 123
skm 50 gd 123 d
skm 22 gal 123
SKM 75 GB 123D
semikron skm 40
skm 40 gb 123 d
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SEMIKRON SKM 50 GAL 121D
Abstract: skm 50 z skm 75 gb 101 d SK 200 GAR 125 50GB101D skm 22 gal 121 SEMIKRON SKM 22 GAL 121D SEMIKRON SKM 100 GAL 101D
Text: s e M IKRD n Absolute Maximum Ratings Sym bol Values . 101 D Conditions ' 1000 1000 VcES VcGR R g e = 20 k£2 Ic T c a s e = 25/80 °C T c a s e = 25/80 CC ICM per IGBT, T ca se 1200 1200 50/34 100/68 ±20 400 - 5 5 . .+150 2 500 Class F 55/150/56 V ges
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semikron skm 75gb
Abstract: No abstract text available
Text: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)
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SEMIKRON SKM 22 GAL 121D
Abstract: SEMIKRON SKM 50 GAL 121D skm 100 gb 121d GE215 40GB101D SK 70 KQ 16 SEMIKRON SKM4 skm 75 101 SEMIKROM SEMIKRON+SKM+22+GAL+121D
Text: s e MIKRD n Absolute Maximum Ratings Symbol C onditions 1 Values VcES R ge = 2 0 kQ T case = 2 5 /8 0 °C T case = 2 5 /8 0 °C VcGR lc ICM 1000 1200 V 1200 V per IG B T , T case = 2 5 °C 8 0 /5 0 A ± 20 V A C , 1 min D IN 4 0 0 4 0 W 300 -5 5 . humidity
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SKM40
SKM40GAR
SEMIKRON SKM 22 GAL 121D
SEMIKRON SKM 50 GAL 121D
skm 100 gb 121d
GE215
40GB101D
SK 70 KQ 16 SEMIKRON
SKM4
skm 75 101
SEMIKROM
SEMIKRON+SKM+22+GAL+121D
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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