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    SKM 600 GB Search Results

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    SKM 600 GB Price and Stock

    SEMIKRON SKM 600 GB 066 D

    Igbt Power Module |Semikron SKM 600 GB 066 D
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    Newark SKM 600 GB 066 D Bulk 12
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    • 100 $274.98
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    SEMIKRON SKM600GB126D

    Igbt Module, 1.2Kv, 660A, Semitrans 3; Continuous Collector Current:660A; Collector Emitter Saturation Voltage:2.12V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM600GB126D
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    Newark SKM600GB126D Bulk 12
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    • 100 $367.78
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    Richardson RFPD SKM600GB126D 1
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    SEMIKRON SKM600GB066D 21915620

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM600GB066D 21915620 1
    • 1 $414.3
    • 10 $365.69
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    SEMIKRON SKM600GB126D 22890638

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM600GB126D 22890638 1
    • 1 $545.77
    • 10 $481.69
    • 100 $433.08
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    SEMIKRON SKM600GB12E4 22892092

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM600GB12E4 22892092 1
    • 1 $501.58
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    Find more SKM 600 GB price and stock on Findchips.com

    SKM 600 GB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SKM600GB066D Semikron Trench IGBT Modules Original PDF
    SKM600GB126D Semikron SEMITRANS 3 - Trench IGBT Module Original PDF

    SKM 600 GB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SKM 600 gb

    Abstract: semikron IGBT 400A 600v
    Text: SKM 600 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    skm 195 gb 125 dn

    Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
    Text: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D


    Original     		PDF 400GAL125D 101GD066HDS 151GD066HDS 201GD066HDS 202GB066HDs 302GB066HDs 402GB066HDs SEMIX171KH16S SEMIX191KD16S SEMIX241DH16S skm 195 gb 125 dn IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107

    Untitled

    Abstract: No abstract text available
    Text: SKM 600 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF

    skm400gal125d

    Abstract: SKM400GB125D
    Text: SKM 400GB125D Tc = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT VCES Tj = 25 °C 1200 V IC Tj = 150 °C 400 300 A A ICRM ICRM=2xICnom 600 A ± 20 V Tj = 125 °C 10 µs Tcase = 25 °C Tcase = 80 °C 390


    Original     		PDF 400GB125D 400GAL125D 400GAR125D skm400gal125d SKM400GB125D

    GB125D

    Abstract: Dt10 gb125
    Text: SKM 200 GB 125 D . Values Absolute Maximum Ratings Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 GB125D Dt10 gb125

    Semikron SKM 145 GB 124 DN

    Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
    Text: SKM 145 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits

    skm 40 gb 124 d

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"
    Text: SKM 400 GB 125 D . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM 400 gal 124 IGBT "the calculation of the power dissipation for the igbt and the inverse diode in circuits"

    IGBT SKM 145 GB 063 DN

    Abstract: M145GB063DN
    Text: SKM 145 GB 063 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 IGBT SKM 145 GB 063 DN M145GB063DN

    skm 195 gb 125 dn

    Abstract: NPT-IGBT SKM skm195gal
    Text: SKM 195 GB 063 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 skm 195 gb 125 dn NPT-IGBT SKM skm195gal

    skm 50 gb 100 d

    Abstract: No abstract text available
    Text: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 skm 50 gb 100 d

    skm 195 gb 125 dn

    Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
    Text: SKM 195 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 skm 195 gb 125 dn SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124

    Untitled

    Abstract: No abstract text available
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    IEC 974-1

    Abstract: SKM 400
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C ICRM Tcase = 25 (80) °C, tp =1 ms VGES Tvj, (Tstg ) TOPERATION ≤ T stg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 300 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Semikron SKM

    Abstract: GAL 200 gb
    Text: SKM 145 GB 174 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original     		PDF 3K7/IE32 Semikron SKM GAL 200 gb

    skm 50 gb 100 d

    Abstract: No abstract text available
    Text: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF

    semikron IGBT 150A 600v

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF T\datbl\B06-ig bt\200 gb128d semikron IGBT 150A 600v

    semikron IGBT 75a 600v module

    Abstract: No abstract text available
    Text: SKM 100 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    RU diode

    Abstract: 128D
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    skm 195 gb 125 dn

    Abstract: No abstract text available
    Text: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF M195GB126DN skm 195 gb 125 dn

    M200G128

    Abstract: No abstract text available
    Text: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF M200G128 XLS-13

    Untitled

    Abstract: No abstract text available
    Text: SKM 145 GB 174 DN . $EVROXWH 0D[LPXP 5DWLQJV 9DOXHV 6\PERO &RQGLWLRQV  9& 6 9&*5 ,& ,&0 9*(6 3WRW 7M 7VWJ 9LVRO KXPLGLW\ FOLPDWH 8QLWV 5*(  NΩ 7FDVH  ƒ& 7FDVH  ƒ& WS SHU ,*%7 7FDVH  PV  ƒ& $&  PLQ IEC 60721-3-3 ,(&  7  


    Original     		PDF

    UPS es 550

    Abstract: SKM300GB123D
    Text: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600


    OCR Scan     		PDF 300GB123D 300GB123D 300GAL123D 300GAR123D UPS es 550 SKM300GB123D